SYNTHESIS AND CHARACTERIZATION OF Fe–ZnO THIN FILMS FOR ANTIMICROBIAL ACTIVITY

2019 ◽  
Vol 26 (05) ◽  
pp. 1850197 ◽  
Author(s):  
SELMA M. H. AL-JAWAD ◽  
SABAH H. SABEEH ◽  
ALI A. TAHA ◽  
HUSSEIN A. JASSIM
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Optical Bandgap ◽  
Zno Thin Films ◽  
Zno Films ◽  
Fe Doping ◽  
E Coli ◽  
Average Grain Size ◽  
Vis Spectroscopy ◽  
Doped Zno

Pure and Fe-doped zinc oxide (ZnO) sol–gel thin films were deposited by spin-coating process. Pure ZnO and Fe–ZnO films, containing Fe of 2–8[Formula: see text]wt.%, were annealed at 500∘C for 2[Formula: see text]h. All prepared thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–visible (UV–vis) spectroscopy. XRD studies show the polycrystalline nature with hexagonal wurtzite structure of pure ZnO and Fe–ZnO thin films. The crystallite size of the prepared samples reduced with increasing Fe doping concentrations. AFM and SEM results indicated that the average grain size decreased as Fe doping concentration increased. The transmittance spectra were then recorded at wavelengths ranging from 300[Formula: see text]nm to 1000[Formula: see text]nm. The films produced yielded high transmission at visible regions. The optical bandgap energy of spin-coated films also decreased as Fe doping concentration increased. In particular, their optical bandgap energies were 3.75, 3.6, 3.5, 3.45 and 3.3 eV at 0-, 2-, 4-, 6- and 8-wt.% Fe concentrations, respectively. Antibacterial activities of pure ZnO and Fe–ZnO against E. coli and S. aureus were evaluated by international recognized test (JIS Z 2801). The results showed that pure and Fe-doped ZnO thin films have antibacterial inhibition zone against E. coli and S. aureus. Gram-positive bacteria seemed be more resistant to pure and Fe-doped ZnO thin films than gram-negative bacteria. The test shows an incremental increase in antibacterial activity of the thin films when dopant ratio increased under UV light.

Investigation of Fe doped ZnO thin films by X-ray absorption spectroscopy

RSC Advances ◽  
2016 ◽  
Vol 6 (78) ◽  
pp. 74982-74990 ◽  
Author(s):  
Ashok Kumar Yadav ◽  
Sk Maidul Haque ◽  
Shilpa Tripathi ◽  
Dinesh Shukla ◽  
Md. A. Ahmed ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Doping Concentration ◽  
Zno Thin Films ◽  
Fe Doping ◽  
X Ray ◽  
Doped Zno ◽  
X Ray Absorption

XANES and EXAFS studies have been carried out on Fe doped ZnO thin films having different Fe doping concentration ranging from 1% to 10% and the observed ferromagnetism in the samples is explained in the light of XANES and EXAFS observations.

scholarly journals Investigation of the room temperature ferromagnetism in transition metal doped ZnO thin films

2020 ◽  
Author(s):  
Arun Kumar ◽  
Pooja Dhiman ◽  
Sanjeev Aggarwal ◽  
Mahavir Singh
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Structural Information ◽  
Room Temperature Ferromagnetism ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Average Grain Size ◽  
Vis Spectroscopy ◽  
Doped Zno ◽  
Metal Doped

Abstract In the present work, we have studied the ferromagnetic nature of the (Fe, Ni) co-doped Zn1-x-y NiyFexO (y = 0.01 and x = 0.01, 0.03, 0.05) thin films fabricated through the RF magnetron sputtering on Silicon (400) substrate. Structural information of the deposited transition metal-doped ZnO thin films was studied through X-ray Diffraction (XRD) techniques. The surface roughness and average grain size of the thin films examine through Atomic Force Microscopy (AFM). The optical band gaps of the thin films have been analyzed through the UV-Vis spectroscopy and it was appropriate for the optoelectronic devices. Tau’c Plots were used for the calculation of the band gap by extrapolating the (αhν) = 0, the straight-line portion of the plot to zero absorption coefficient. The magnetic study of these thin films confirmed the ferromagnetic (FM) behavior. RT-FM in all the deposited thin films was discuses on the base of polaron percolation theory.

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

scholarly journals Influence of Annealing on Properties of Spray Deposited ZnO Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Kalyani Nadarajah ◽  
Ching Yern Chee ◽  
Chou Yong Tan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Spray Pyrolysis Technique ◽  
Hexagonal Wurtzite Structure ◽  
Ambient Air ◽  
Zno Thin Films ◽  
Visible Range ◽  
X Ray ◽  
Average Grain Size ◽  
Vis Spectroscopy

Zinc Oxide (ZnO) thin films were deposited on glass substrates via the spray pyrolysis technique. The films were subsequently annealed in ambient air from 300°C to 500°C. The morphology and structural properties of the thin films were studied by field emission scanning electron microscope (FESEM), atomic force microscopy (AFM), and X-ray diffractometry (XRD) techniques. Electrical resistivity of the thin films was measured using a data acquisition unit. The optical properties of the films were characterized by UV-vis spectroscopy and photoluminescence (PL) technique. X-ray diffraction data showed that the films were grown in the (002) direction with a hexagonal wurtzite structure. The average grain size ranged from 15 to 27 nm. Increasing annealing temperatures resulted in larger grain sizes and higher crystallinity, with the surface roughness of annealed films being more than twice if compared to unannealed film. The electrical resistivity of the films decreased with the increasing annealing temperature. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton and defect-related emissions, respectively. The transmission values of the films were as high as 90% within the visible range (400–700 nm).

Photocatalytic Properties of ZnO and Ag Doped ZnO Thin Films

2014 ◽  
Vol 685 ◽  
pp. 3-6
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Structural Features ◽  
Photocatalytic Properties ◽  
Zno Thin Films ◽  
Molar Ratio ◽  
Zno Films ◽  
Doped Zno ◽  
Excellent Adhesion

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.

scholarly journals Optical Properties and Raman Scattering Investigation of Ag Doped ZnO Thin Film Prepared by Two-Step Solution-Based Deposition Method

2015 ◽  
Vol 773-774 ◽  
pp. 739-743
Author(s):  
A.N. Afaah ◽  
N.A.M. Asib ◽  
Aadila Aziz ◽  
Ruziana Mohamed ◽  
Kevin Alvin Eswar ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Ultra Violet ◽  
Peak Shift ◽  
Zno Thin Films ◽  
Zno Films ◽  
Deposition Method ◽  
Immersion Method ◽  
Glass Substrates ◽  
Doped Zno

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.

Structural and Optical Studies of Molarity Based ZnO Thin Films

2017 ◽  
Vol 17 ◽  
pp. 140-148 ◽  
Author(s):  
A. Jacquiline Regina Mary ◽  
S. Arumugam
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Visible Region ◽  
Precursor Solution ◽  
Hexagonal Wurtzite Structure ◽  
Solution Concentration ◽  
Molar Concentration ◽  
Zno Thin Films ◽  
Zno Films ◽  
Average Grain Size

Zinc Oxide thin films were prepared for different precursor solution molarities from 0.025M to 0.1M by spray pyrolysis deposition technique. A comprehensive study was carried out to realize the effect of concentration of precursor on ZnO thin films. The optimized temperature of the glass substrate was 300°C. From the XRD data it is inferred that the films are polycrystalline and hexagonal wurtzite structure . The degree of preferred orientation were along diffraction planes (100), (002) and (101) for all the ZnO films. The intensity of the diffraction peak prepared with 0.1M concentration is higher than those prepared at lower concentrations. The grain size (D) was calculated using Debye-Scherrer formula. It was found that the average grain size increases, when the molar concentration increases. As the solution concentration increases, the band gap decreases. The films are transparent in the visible region (85%), and the transmittance decreases as the molar concentration increases, which is caused by optical scattering at grain boundaries.

scholarly journals Growth of Zn1−x CdxO nanocrystalline thin films by sol-gel method and their characterization for optoelectronic applications

2014 ◽  
Vol 32 (4) ◽  
pp. 688-695 ◽  
Author(s):  
Munirah Munirah ◽  
Ziaul Khan ◽  
Mohd. Khan ◽  
Anver Aziz
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cd Doping ◽  
Vis Spectroscopy ◽  
Doped Zno

AbstractThis paper describes the growth of Cd doped ZnO thin films on a glass substrate via sol-gel spin coating technique. The effect of Cd doping on ZnO thin films was investigated using X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy, I–V characteristics and field emission scanning electron microscopy (FESEM). X-ray diffraction patterns showed that the films have preferred orientation along (002) plane with hexagonal wurtzite structure. The average crystallite sizes decreased from 24 nm to 9 nm, upon increasing of Cd doping. The films transmittance was found to be very high (92 to 95 %) in the visible region of solar spectrum. The optical band gap of ZnO and Cd doped ZnO thin films was calculated using the transmittance spectra and was found to be in the range of 3.30 to 2.77 eV. On increasing Cd concentration in ZnO binary system, the absorption edge of the films showed the red shifting. Photoluminescence spectra of the films showed the characteristic band edge emission centred over 377 to 448 nm. Electrical characterization revealed that the films had semiconducting and light sensitive behaviour.

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