EFFECT OF Al DOPING CONCENTRATION ON MICROSTRUCTURE, PHOTOELECTRIC PROPERTIES AND DOPED MECHANISM OF AZO FILMS

2014 ◽  
Vol 21 (03) ◽  
pp. 1450040 ◽  
Author(s):  
YING XU ◽  
YANQING CAI ◽  
LINYAN HOU ◽  
PENGHUA MA
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
Optical Transmittance ◽  
Visible Range ◽  
Zno Films ◽  
Al Doping ◽  
Limit Value ◽  
Photoelectric Properties ◽  
Pressure Chemical

Al doped ZnO (AZO) thin films were deposited on a glass substrate by atmospheric pressure chemical vapor deposition (APCVD) method. Effect of Al doping concentration on microstructure, photoelectric properties and doped mechanism of AZO thin films were investigated. The analysis results revealed that the structural properties of the films possessed crystalline structure with a preferred (002) orientation. The best crystallization quality and minimum electrical resistivity was obtained at 5 at.% Al doped films and the minimum resistivity was 6.6 × 10-4 Ω ⋅ cm. Uniform granular grains were observed on the surface of AZO films, and the average optical transmittance was above 80% in the visible range. The doped mechanism of AZO films was analyzed as follows. With Al doping in ZnO films, AlZn substitute and Ali interstice were produced, which decreased the resistivity of films. While after the limit value and with the continuing increase of Al doping concentration, free electrons were consumed and the resistivity of films increased.

Effects of Thickness and Preheated Temperature on Grains Orientation of 2D-ZnO Nanostructure and their Photocatalytic Activity

2021 ◽  
Vol 66 ◽  
pp. 113-128
Author(s):  
Mahdia Toubane ◽  
Assia Azizi ◽  
D. Houanoh ◽  
R. Tala-Ighil ◽  
F. Bensouici ◽  
...  
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Heating Temperature ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Blue Dye ◽  
Zno Nanostructure ◽  
Number Of Layers

The effects of pre-heating temperature and thickness of layers on (002) preferred orientation of ZnO thin films and their photocatalytic activity are reported. All films crystallize into a Zincite-type structure. With increasing pre-heating temperature, the evolution from (002) to (101) diffraction peaks indicates change in growth mode of ZnO films. Pre-heating at 100°C is the most favourable for highly oriented ZnO thin films along (002) plane whereas all films deposited with different number of layers are oriented along (101) plane. The crystallite size is found to be in the range 20 - 32 nm. The observed average optical transmittance for these films is higher than 90% in the visible range. The energy band gap decreases with increasing number of layers but increases with increasing pre-heating temperatures. Wettability tests of ZnO thin films surface show a hydrophobic aspect for all films. The film pre-heated at 400°C with 223nm of thickness exhibits the highest degradation of methyl blue dye of 94% with high levels of photostability over five cycles.

Effect of Annealing Temperature on Properties of ZnO Thin Films

2010 ◽  
Vol 150-151 ◽  
pp. 1796-1800
Author(s):  
Dong Ping Zhang ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Liang Mao ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Fundamental Absorption Edge ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Intrinsic Stress ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Dc Reactive Magnetron Sputtering

ZnO thin films were deposited by DC reactive magnetron sputtering, and the samples were annealed from 100°C to 400°C, respectively. With the help of x-ray diffractmeter (XRD), spectrophotometer, and photoluminescence (PL) spectroscopy system, the microstructure, intrinsic stress, optical properties, and PL properties were investigated, respectively. The XRD results reveal that all the ZnO films are found to have the hexagonal wurtzite structure with prominent (002) peak. With the annealing temperature increasing, the grain size increased accordingly. All the samples exhibit compressive stress, and the stress value decreasing with annealing temperature increasing. Optical transmittance spectra investigated that all the samples have high transmittance in visible range. With annealing temperature increasing, peak transmittance rising of the sample were observed. The fundamental absorption edge, which associated with band gap of materials, shifting to longer wavelength is observed too. PL results shows that the sample annealed with 300°C have higher intensity emission peak.

Influence of Low Temperature Annealing on Structure and Photoelectric Properties of MgZnO Thin Films

2012 ◽  
Vol 562-564 ◽  
pp. 142-145 ◽  
Author(s):  
Xi Jian Zhang ◽  
Xiao Yu Liu ◽  
Xue Yan Zhang ◽  
Han Bin Wang ◽  
Qing Pu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Single Phase ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Visible Range ◽  
Transmission Spectra ◽  
Structural And Optical Properties ◽  
Low Temperature Annealing ◽  
Photoelectric Properties

Structural and optical properties of MgxZn1-xO (x=0.23) thin films grown by radio frequency (R.F.) magnetron sputtering and annealed with different temperature (from 100°C to 400°C) are reported. The films were single-phase, highly c-axis oriented and wurtzite structure. The transmission spectra, recorded in the visible range, reveal a high transmission coefficient (about 95 %) in the obtained films. Besides, when the annealing temperature is 100°C, the crystalline grains are smooth, compact and uniformly distributed. As the annealing temperature increases from 100°C to 400°C, the crystalline grains get larger, but the annealing temperature does not influence optical transmittance obviously.

Electrochemical Deposition and Properties Research of ZnO Thin Films

2013 ◽  
Vol 669 ◽  
pp. 72-78
Author(s):  
Guang Ming Wu ◽  
Yao Ding ◽  
De Wen Gao ◽  
Guang Jian Xing ◽  
Yang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Potassium Nitrate ◽  
Zinc Nitrate ◽  
Visible Range ◽  
Zno Films ◽  
Square Wave ◽  
Wave Potential

The transparent ZnO films were deposited on the indium tin oxide (ITO) coated glass substrates by using the square wave potential deposition method. The conductive graphite plate is used for counter electrode, electrolyte consist of zinc nitrate and additive of electrochemistry, which is made up CTAB and potassium nitrate. Crystallinities of the films were examined by X-ray diffractometer. The morphologies of zinc oxide films were observed with atomic force microscope. Optical characteristics of zinc oxide layers were measured with UV–vis spectrophotometer. The optimal conditions for preparation of zinc oxide thin films with the square wave potential method were as follows: the deposition time was 6 min, concentration of zinc nitrate was 0.05mol/L, deposition temperature was 80 °C, and the annealing temperature was 500 º C. The average optical transmittance of the ZnO films is higher than 85% in the visible range. Moreover, the films have flat surface and small grain size.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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