Influence of anatase-rutile ratio on band edge position and defect states of TiO2 homojunction catalyst

By changing the occupancies of the metal ions and counterions, the tuning of the framework charge, band-edge position and bandgap of a novel Cd(ii) porphyrinic MOF 1 was achieved.

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Synthesis and electrochemical properties of InP nanocrystals

Journal of Materials Research ◽

10.1557/jmr.2006.0068 ◽

2006 ◽

Vol 21 (3) ◽

pp. 543-546 ◽

Cited By ~ 6

Author(s):

Sandeep Kumar ◽

Ralf Thomann ◽

Thomas Nann

Keyword(s):

Solar Cells ◽

Electrochemical Properties ◽

Band Edge ◽

Spherical Particles ◽

Synthetic Method ◽

Growth Duration ◽

Light Emitting ◽

Electro Optic ◽

Band Edge Position ◽

Key Parameter

In this report, we present a new organometallic synthetic method to prepare nearly monodisperse InP nanoparticles using indium trifluoroacetate as the In precursor. Spherical particles of various sizes were prepared by modulating the growth duration. The optical and electrochemical properties were investigated and discussed with reference to band edge positions. This is the first report on the band edge position of quantum confined InP nanoparticles, which is a key parameter for development of electro-optic devices like solar cells and light-emitting diodes based on it.

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Electronic structure and absolute band edge position of tetragonal AgInS2 photocatalyst: A hybrid density functional study

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.07.008 ◽

2015 ◽

Vol 40 ◽

pp. 446-452 ◽

Cited By ~ 26

Author(s):

Jianjun Liu ◽

Enda Hua

Keyword(s):

Electronic Structure ◽

Density Functional ◽

Band Edge ◽

Functional Study ◽

Density Functional Study ◽

Hybrid Density Functional ◽

Band Edge Position

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Electronic States in the Gap of a-Si from Bond Angle Variations

MRS Proceedings ◽

10.1557/proc-192-279 ◽

1990 ◽

Vol 192 ◽

Cited By ~ 1

Author(s):

B. N. Davidson ◽

G. Lucovsky

Keyword(s):

Valence Band ◽

Density Of States ◽

Bond Angle ◽

Bethe Lattice ◽

Band Edge ◽

Conduction Band Edge ◽

Valence Band Edge ◽

Defect States ◽

Discrete State ◽

Bond Angles

ABSTRACTWe investigate the formation of defect states in the gap of a-Si arising from deviations from the ideal tetrahedral bond angles. The local density of states for Si atoms in disordered environments is calculated using tight-binding parameters for the cluster-Bethe lattice method. The Hamiltonian for a-Si with bond angle distortions is taken as an average over many configurations associated with a random choice of bond angles, weighted by Gaussian distributions with standard deviations between 2°.and 10°. Bond angle deviations in this range generate a density of defect states at the valence band edge that: 1) increases as the average bond angle deviation increases; and 2) is significantly larger than the density of band tail states generated at the conduction band edge. We obtain a shift of the absorption edge from the joint density of states (DOS) as a function of bond angle deviations. In addition, a calculation of the DOS for a distorted tetrahedral cluster embedded in an idealized Bethe lattice yields a threshold bond angle distortion of ±20° for the appearance of a discrete state in the gap near the valence band edge.

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Electronic properties of red and black phosphorous and their potential application as photocatalysts

RSC Advances ◽

10.1039/c6ra10907a ◽

2016 ◽

Vol 6 (84) ◽

pp. 80872-80884 ◽

Cited By ~ 19

Author(s):

Kaining Ding ◽

Lili Wen ◽

Shuping Huang ◽

Yulu Li ◽

Yongfan Zhang ◽

...

Keyword(s):

Visible Light ◽

Band Gap ◽

Electronic Properties ◽

Potential Application ◽

Separation Efficiency ◽

Charge Carriers ◽

Band Edge ◽

Strong Response ◽

Black Phosphorous ◽

Band Edge Position

The promising potential of monolayerrPandbPas photocatalysts was identified, due to their suitable band gap, appropriate band edge position, higher mobility and separation efficiency of charge carriers, and strong response to visible light.

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The influence of the band edge position upon the reduction kinetics and the etching behaviour at the GaP-Fe(CN)3−6 interface

Electrochimica Acta ◽

10.1016/0013-4686(90)85006-9 ◽

1990 ◽

Vol 35 (9) ◽

pp. 1351-1358 ◽

Cited By ~ 11

Author(s):

H.H. Goossens ◽

I.E. Vermeir ◽

F. Vanden Kerchove ◽

W.P. Gomes

Keyword(s):

Band Edge ◽

Reduction Kinetics ◽

Band Edge Position

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Enhanced photocatalytic oxidizing ability via adjusting the band-edge position and oxygen defect concentration of bismuth phosphate

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2020.154953 ◽

2020 ◽

Vol 832 ◽

pp. 154953

Author(s):

Jing Xie ◽

Yali Cao ◽

Dianzeng Jia

Keyword(s):

Defect Concentration ◽

Band Edge ◽

Oxygen Defect ◽

Bismuth Phosphate ◽

Band Edge Position

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Comparison of Trapping States at SiO2/Si Interfaces on si(100), (110), and (111) Prepared by Plasma-Assisted Oxidation and Oxide Deposition, and by Exposure to Atomic H Prior to Oxidation and Deposition

MRS Proceedings ◽

10.1557/proc-262-473 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 1

Author(s):

T. Yasuda ◽

Y. Ma ◽

S. Habermehl ◽

G. Lucovsky

Keyword(s):

Low Temperature ◽

Valence Band ◽

Deposition Process ◽

Band Edge ◽

Valence Band Edge ◽

Defect States ◽

Thermally Grown Oxides ◽

Bond State ◽

Capacitance Voltage ◽

Oxide Deposition

ABSTRACTS1O2 layers, ∼ 15 nm thick, were formed on Si (100), (110), and (111) surfaces by a low-temperature, 200–300°C, plasma-assisted oxidation/deposition process sequence. The distribution of the trap density at the S1O2/Si interface, and in the Si band-gap, Dit, was deduced from capacitance-voltage, C-V, measurements. The values of Dit at midgap varied with crystal orientation in a similar way as in thermally grown oxides. In addition, the low-temperature oxides displayed a characteristic and intrinsic dangling bond state, the so-called Pb center, at ∼0.3 eV above the Si valence-band edge. Samples exposed to atomic H prior to the oxidation and deposition steps, showed an increase in Dit due to a roughening of the Si surfaces, which produced additional broad bands of defect states, at ∼0.5 and ∼0.7 eV above the Si valence-band edge.

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