Comprehensive pore structure characterization of silica monoliths with controlled mesopore size and macropore size by nitrogen sorption, mercury porosimetry, transmission electron microscopy and inverse size exclusion chromatography

2005 ◽  
Vol 1083 (1-2) ◽  
pp. 14-22 ◽  
Author(s):  
Dieter Lubda ◽  
Wolfgang Lindner ◽  
Milene Quaglia ◽  
Cedric du Fresne von Hohenesche ◽  
Klaus K. Unger
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mercury Porosimetry ◽  
Structure Characterization ◽  
Size Exclusion ◽  
Silica Monoliths ◽  
Transmission Electron ◽  
Exclusion Chromatography ◽  
Inverse Size Exclusion Chromatography

scholarly journals Transmission electron microscopy as an important tool for characterization of zeolite structures

2018 ◽  
Vol 5 (11) ◽  
pp. 2836-2855 ◽  
Author(s):  
W. Wan ◽  
J. Su ◽  
X. D. Zou ◽  
T. Willhammar
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Electron Tomography ◽  
Structure Characterization ◽  
Transmission Electron ◽  
High Resolution Tem

This review presents various TEM techniques including electron diffraction, high-resolution TEM and scanning TEM imaging, and electron tomography and their applications for structure characterization of zeolite materials.

Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Ruvimov ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
K. J. Duxstad ◽  
E. E. Hailer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Ohmic Contacts ◽  
High Resolution Electron Microscopy ◽  
Structure Characterization ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Thin Polycrystalline

AbstractTransmission electron microscopy has been applied to characterize the structure of Ti/Al and Ti/Al/Ni/Au ohmic contacts on n-type GaN (˜1017 cm−3 ) epitaxial layers. A thin polycrystalline cubic TiN layer epitaxially matched to the (0001) GaN surface was detected at the interface with the GaN substrate. This layer was studied in detail by electron diffraction and high resolution electron microscopy. The orientation relationship between the cubic TiN and the GaN was found to be: {111}TiN//{00.1}GaN, [110]TiN//[11.0]GaN, [112 ]TiN//[ 10.0]GaN. The formation of this cubic TiN layer results in an excess of N vacancies in the GaN close to the interface which is considered to be the reason for the low resistance of the contact.

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