Hydrophobic nanostructures fabricated by ferric nitrate etching method on single crystalline silicon surface

2019 ◽  
Vol 583 ◽  
pp. 123999
Author(s):  
Zhiyong Chang ◽  
Youhong Sun ◽  
Jian Xu ◽  
Xuanjie Zong ◽  
Qiongqiong Tang ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Crystalline Silicon ◽  
Ferric Nitrate ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Etching Method

scholarly journals Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 563
Author(s):  
Toshiyuki Hamada ◽  
Shunsuke Masuda ◽  
Kazuki Nishida ◽  
Soma Yamamoto
Keyword(s):  
Silicon Nitride ◽  
Applied Voltage ◽  
Silicon Surface ◽  
Discharge Plasma ◽  
Crystalline Silicon ◽  
Surface Discharge ◽  
Etching Time ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Carrier Gas

In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier gas were narrower than those etched using He, and the etching speed achieved using Ar was higher than that achieved using He. Furthermore, the electrode groove created by surface-discharge plasma gradually widened as etching time and applied voltage increased.

scholarly journals Pressure-induced amorphization in the nanoindentation of single crystalline silicon

RSC Advances ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 1357-1362 ◽  
Author(s):  
Jing Han ◽  
Song Xu ◽  
Jiapeng Sun ◽  
Liang Fang ◽  
Hua Zhu
Keyword(s):  
Molecular Dynamics ◽  
Phase Transformation ◽  
Mechanical Behavior ◽  
Molecular Dynamics Simulations ◽  
Silicon Surface ◽  
Large Scale ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Dynamics Simulations

Large-scale molecular dynamics simulations of nanoindentation on a (100) oriented silicon surface were performed to investigate the mechanical behavior and phase transformation of single crystalline silicon.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

Sign in / Sign up

Export Citation Format

Share Document