Unraveling the influence of substrate on the growth rate, morphology and covalent structure of surface adherent polydopamine films

Author(s):  
Jan Svoboda ◽  
Martin Král ◽  
Marcela Dendisová ◽  
Pavel Matějka ◽  
Ognen Pop-Georgievsk
2009 ◽  
Vol 39 (1) ◽  
pp. 64-75 ◽  
Author(s):  
Lu-Min Vaario ◽  
Arja Tervonen ◽  
Kati Haukioja ◽  
Markku Haukioja ◽  
Taina Pennanen ◽  
...  

Over a 5 year period, we examined the influence of substrate and fertilization on nursery growth and outplanting performance of Norway spruce (Picea abies (L.) Karst.). We focused on the relative growth and development of roots and shoots and the colonization intensity and diversity of ectomycorrhizal (ECM) fungi. In the nursery, a conventional substrate (low-humified Sphagnum peat) supplemented with woody material (wood fibre and pine bark) and either mineral or organic fertilizers yielded shorter seedlings than those grown on the unmodified substrate. However, after outplanting, the growth rate of seedlings cultivated on modified substrates was higher than that of seedlings grown on the unmodified substrate. Seedlings cultivated in modified substrates had significantly higher root/shoot ratios and ECM diversity; the latter remained significant after ≥3 years of outplanting. Seedlings grown on a substrate containing 50% woody material and supplemented with organic fertilizer had the highest growth rate among all seedlings during the 3 year period of outplanting. Colonization intensity of ECM fungi was high in all seedlings except for those grown in heavily fertilized substrate. This study suggests that nursery techniques that produce seedlings with higher root/shoot ratios and ECM diversities could improve plantation success and growth rate for at least the first 3 years of outplanting.


2011 ◽  
Vol 519 (21) ◽  
pp. 7556-7559 ◽  
Author(s):  
J. Schaffner ◽  
E. Feldmeier ◽  
A. Swirschuk ◽  
H.-J. Schimper ◽  
A. Klein ◽  
...  

1996 ◽  
Vol 441 ◽  
Author(s):  
Hyunchol Shin ◽  
Young-Se Kwon

AbstractWe have investigated the influence of substrate misorientation on facet formation in selective area metalorganic chemical vapor deposition (MOCVD) on GaAs (001) vicinal substrates. Macroscopic steps several hundred angstroms high were generated on the epitaxial layer over triangular voids where the voids were formed using the conditions of the reverse–mesa–shaped facets. AFM observations revealed that the macroscopic steps were formed by the combined effects of the growth rate enhancement and the development of the exact (001) crystallographic surface. Through removing the growth rate enhancement effect from the experiment results, it could be expected that the exact (001) surface developed only on the side for which the (001) surface was exposed because the surface energy of a low index plane was lower than that of a misoriented high index plane.


2001 ◽  
Vol 474 (1-3) ◽  
pp. 28-36 ◽  
Author(s):  
M.J.J. Jak ◽  
C. Konstapel ◽  
A. van Kreuningen ◽  
J. Chrost ◽  
J. Verhoeven ◽  
...  

2013 ◽  
Vol 28 (2) ◽  
pp. 201-206
Author(s):  
Fang-Li YU ◽  
YU BAI ◽  
Yi QIN ◽  
Dong YUE ◽  
Cai-Jun LUO ◽  
...  

Author(s):  
Wilfried Sigle ◽  
Matthias Hohenstein ◽  
Alfred Seeger

Prolonged electron irradiation of metals at elevated temperatures usually leads to the formation of large interstitial-type dislocation loops. The growth rate of the loops is proportional to the total cross-section for atom displacement,which is implicitly connected with the threshold energy for atom displacement, Ed . Thus, by measuring the growth rate as a function of the electron energy and the orientation of the specimen with respect to the electron beam, the anisotropy of Ed can be determined rather precisely. We have performed such experiments in situ in high-voltage electron microscopes on Ag and Au at 473K as a function of the orientation and on Au as a function of temperature at several fixed orientations.Whereas in Ag minima of Ed are found close to <100>,<110>, and <210> (13-18eV), (Fig.1) atom displacement in Au requires least energy along <100>(15-19eV) (Fig.2). Au is thus the first fcc metal in which the absolute minimum of the threshold energy has been established not to lie in or close to the <110> direction.


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