Ultra-Low Dielectric Constant Fluorinated Graphene/Polybenzoxazole Composite Films with Excellent Thermal Stabilities and Mechanical Properties

2021 ◽  
pp. 106387
Author(s):  
Zihua Yu ◽  
Shaohua Wu ◽  
Chuncheng Li ◽  
Yaonan Xiao ◽  
Liuchun Zheng ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Composite Films ◽  
Low Dielectric Constant ◽  
Thermal Stabilities ◽  
Low Dielectric ◽  
Fluorinated Graphene

scholarly journals Preparation of Polyimide Films with Ultra-Low Dielectric Constant by Phase Inversion

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1383
Author(s):  
Panpan Zhang ◽  
Lize Zhang ◽  
Ke Zhang ◽  
Jiupeng Zhao ◽  
Yao Li
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Phase Inversion ◽  
Polyimide Film ◽  
Porous Film ◽  
Breakdown Field ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Dielectric Performance ◽  
Fluorinated Graphene

Due to the high value of its dielectric constant, polyimide does not meet the requirements of the development of integrated circuits and high-frequency printed circuits. The development of novel low dielectric constant polyimide materials for the preparation of flexible copper clad laminates is of theoretical and practical significance in the application of polyimide for 5G communications. In this work, different fluorinated graphene/polyamic acids (FG/PAA) were used as the precursor, and the porous polyimide film was successfully prepared by phase inversion. The dielectric constant of the porous polyimide film is relatively low, being less than 1.7. When the content of fluorinated graphene is 0.5 wt%, the overall dielectric performance of the porous film is the best, with a dielectric constant of 1.56 (10 kHz) and a characteristic breakdown field strength of 56.39 kV/mm. In addition, the mechanical properties of the film are relatively poor, with tensile strengths of 13.87 MPa (0.2 wt%), 13.61 MPa (0.5 wt%), and 6.25 MPa (1.0 wt%), respectively. Therefore, further improving the breakdown resistance and mechanical properties of the porous film is essential for the application of porous ultra-low dielectric polyimide materials.

A novel approach to prepare graphene oxide/soluble polyimide composite films with a low dielectric constant and high mechanical properties

RSC Advances ◽  
2014 ◽  
Vol 4 (93) ◽  
pp. 51117-51125 ◽  
Author(s):  
Wei-Hao Liao ◽  
Shin-Yi Yang ◽  
Sheng-Tsung Hsiao ◽  
Yu-Sheng Wang ◽  
Shin-Ming Li ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Graphene Oxide ◽  
High Performance ◽  
Composite Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Novel Approach ◽  
Soluble Polyimide

This study proposes a facile, practical and effective approach to prepare high-performance graphene oxide (GO)/soluble polyimide (SPI) composite films through a dissolved and dispersed strategy.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O2 Deposited by PECVD

2007 ◽  
pp. 239-242
Author(s):  
R. Navamathavan ◽  
Anvar Zakirov ◽  
Hyun Seung Kim ◽  
Yong Jun Jang ◽  
An Soo Jung ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric

Robust spin-on-glass poly(methyl)silsesquioxane-based low-k materials derived from a cyclic siloxane precursor

RSC Advances ◽  
2015 ◽  
Vol 5 (82) ◽  
pp. 66511-66517 ◽  
Author(s):  
Albert S. Lee ◽  
Sung Yeoun Oh ◽  
Seung-Sock Choi ◽  
He Seung Lee ◽  
Seung Sang Hwang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Cyclic Siloxane ◽  
Low Dielectric ◽  
Methyl Silsesquioxane ◽  
Low K

Low dielectric constant poly(methyl)silsesquioxane spin-on-glass resins incorporating a cyclic precursor exhibited exceptional mechanical properties to withstand CMP processes.

Novel Silica Tube/Polyimide Composite Films with Variable Low Dielectric Constant

2005 ◽  
Vol 17 (8) ◽  
pp. 1056-1059 ◽  
Author(s):  
Y.-H. Zhang ◽  
S.-G. Lu ◽  
Y.-Q. Li ◽  
Z.-M. Dang ◽  
J. H. Xin ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Composite Films ◽  
Low Dielectric Constant ◽  
Silica Tube ◽  
Low Dielectric

scholarly journals Low-dielectric-constant polyimide aerogel composite films with low water uptake

2016 ◽  
Vol 48 (7) ◽  
pp. 829-834 ◽  
Author(s):  
Jinyoung Kim ◽  
Jinuk Kwon ◽  
Myeongsoo Kim ◽  
Jeonguk Do ◽  
Daero Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Water Uptake ◽  
Composite Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Aerogel Composite

Fabrication and Characterization of Nano-SiO2 Hollow Spheres/Polyimide Composite Films with Low Dielectric Constant

2015 ◽  
Vol 4 (4) ◽  
pp. 398-401
Author(s):  
Hong Zhou ◽  
Jiao-Jiao Yu ◽  
Ming-Yan Zhang ◽  
Yu-Sen Yang ◽  
Zhi-Min Dang
Keyword(s):  
Dielectric Constant ◽  
Hollow Spheres ◽  
Composite Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Fabrication And Characterization

First Pass Study of Surface Modified Porous Low-k by Ion Implantation for Zero Thickness Barrier Requirement of Cu/MSQ/Si Stacks in Copper Metallization Scheme

2005 ◽  
Vol 863 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
Zubin P. Patel ◽  
H. Bakhru
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Ion Implantation ◽  
Porous Silica ◽  
Surface Hardness ◽  
Low Dielectric Constant ◽  
Copper Metallization ◽  
Porous Films ◽  
Critical Dimensions ◽  
Low Dielectric

AbstractLow-κ dielectrics have to meet stringent requirements in material properties in order to be successfully integrated. A particularly difficult challenge for material development is to obtain a combination of low dielectric constant with good thermal and mechanical properties. Incorporation of low dielectric constant materials such as porous silica based materials as a replacement to conventional dielectrics like SiO2 and use of Cu metallization schemes has become a necessity as critical dimensions of devices decrease. This paper is focused on the challenges in developing materials with low dielectric constant but strong thermo mechanical properties. Thin films of Ultra-Low materials such as porous Methyl Silsesquioxane (MSQ) (κ=2.2) were implanted with argon 1 × 1016 cm-2 dose at energies varying from 20 to 50 keV at room temperature. This work shows that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1 × 1016 cm-2 doses at 20 keV, sacrificing only a slight increase (∼9%) in dielectric constant (e.g., from 2.2 to 2.4). The hardness persists after 4500C annealing. In this current work, an ion implantation strategy was pursued to create a SiO2-like surface on MSQ. The effects of implantation parameters on the barrier property and bulk stability of MSQ were then studied. The results reveal one possible route to attain the “zero barrier thickness” requirement for interconnects systems.

Sign in / Sign up

Export Citation Format

Share Document