Electronic Structure and Binding Energy of Carbon Monoxide

1960 ◽  
Vol 32 (2) ◽  
pp. 400-411 ◽  
Author(s):  
A. C. Hurley
Keyword(s):  
Carbon Monoxide ◽  
Electronic Structure ◽  
Binding Energy

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

scholarly journals Simulations of Defect-Interface Interactions in GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 287-293
Author(s):  
J. A. Chisholm ◽  
P. D. Bristowe
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Point Defects ◽  
Potential Model ◽  
Pair Potential ◽  
Planar Defects ◽  
Native Defects ◽  
Native Point Defects ◽  
Bulk Gan ◽  
Image Position

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.

POSSIBLE EVIDENCE FOR A VALENCE BAND SATELLITE IN PHOTOEMISSION SPECTRA FROM Sc(0001)

1994 ◽  
Vol 01 (04) ◽  
pp. 649-653 ◽  
Author(s):  
A.J. PATCHETT ◽  
S.S. DHESI ◽  
R.I.R. BLYTH ◽  
S.D. BARRETT
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Binding Energy ◽  
Single Crystals ◽  
Valence Band ◽  
Ground State ◽  
Rare Earth Metals ◽  
Final State ◽  
Bulk Single Crystals ◽  
The Creation

An intense photoemission feature is observed at a binding energy of ~10 eV in the UV photoemission spectra from the (0001) surfaces of bulk single crystals of rare-earth metals. This emission cannot be explained in terms of ground state electronic structure and we have been unable to attribute its existence to the presence of contamination of the surface. We present some evidence that may indicate its origin lies in the creation, by the photoemission process, of a metastable two-hole final state.

scholarly journals Adsorption and sensing of CO and NH3 on chemically modified graphene surfaces

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42318-42326
Author(s):  
A. Sahithi ◽  
K. Sumithra
Keyword(s):  
Carbon Monoxide ◽  
Electronic Structure ◽  
Ab Initio ◽  
Density Functional ◽  
Chemically Modified ◽  
Density Functional Methods ◽  
Functional Methods ◽  
Chemically Modified Surfaces ◽  
Modified Surfaces ◽  
Modified Graphene

We have studied the electronic structure and adsorption characteristics of environmentally potent gaseous molecules like carbon monoxide (CO) and ammonia (NH3) on chemically modified surfaces of graphene, employing ab initio density functional methods.

Electronic structure and binding energy relaxation of ScZr atomic alloying

2016 ◽  
Vol 657 ◽  
pp. 177-183
Author(s):  
Maolin Bo ◽  
Yongling Guo ◽  
Xuexian Yang ◽  
Junjie He ◽  
Yonghui Liu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Energy Relaxation

SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Electron Diffraction ◽  
Band Structure ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Valence Band Structure ◽  
X Ray ◽  
Core Level Binding Energy

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.

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