scholarly journals Shock response of cyclotetramethylene tetranitramine (HMX) single crystal at elevated temperatures

2021 ◽  
Author(s):  
Kai Ding ◽  
Xin-Jie Wang ◽  
Zhuo-Ping Duan ◽  
Yan-Qing Wu ◽  
Feng-Lei Huang
Keyword(s):  
Single Crystal ◽  
Elevated Temperatures ◽  
Shock Response ◽  
Cyclotetramethylene Tetranitramine

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

A reactive molecular dynamics study on the anisotropic sensitivity in single crystal α-cyclotetramethylene tetranitramine

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8609-8621 ◽  
Author(s):  
Ting-Ting Zhou ◽  
Yan-Geng Zhang ◽  
Jian-Feng Lou ◽  
Hua-Jie Song ◽  
Feng-Lei Huang
Keyword(s):  
Molecular Dynamics ◽  
Single Crystal ◽  
Shock Compression ◽  
Slip Plane ◽  
Reactive Molecular Dynamics ◽  
Cyclotetramethylene Tetranitramine

Anisotropic sensitivity is related to the different intermolecular steric arrangements across the slip plane induced by shock compression along various orientations.

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

A Mechanism of Polycrystallization in Fully Lamellar Ti-48Al-8Nb Single Crystal Alloy Aged at Elevated Temperatures

2002 ◽  
Vol 753 ◽  
Author(s):  
Yukinori Yamamoto ◽  
Masao Takeyama ◽  
Takashi Matsuo
Keyword(s):  
Growth Rate ◽  
Diffusion Coefficient ◽  
Single Crystal ◽  
Grain Growth ◽  
Elevated Temperatures ◽  
Volume Diffusion ◽  
Activation Enthalpy ◽  
Lamellar Microstructure ◽  
Aged Sample ◽  
Fully Lamellar

ABSTRACTPolycrystallization mechanism of a fully lamellar microstructure during aging at 1473 and 1273 K has been examined using Ti-48Al-8Nb fully lamellar single crystal, which consists mostly of γ/γ interfaces (variant, perfect-twin and pseudo-twin boundaries). After a certain period of aging, a few γ grains are formed within the lamellae and the lamellar microstructure collapses rapidly to become a γ grained microstructure at both temperatures. An EBSP analysis for aged sample revealed that most of the grains follow the orientation of variant domains in the lamellar microstructure. A kinetic analysis of the grain growth during aging revealed that the activation enthalpy of the growth rate is estimated to be 390 kJ/mol, which is very close to that for volume diffusion coefficient of Al and Nb in γ-TiAl. Based on the results, it is concluded that the formation of the grains is attributed to coarsening of variant domains within the lamellar plates and coalescence of the same variant domains across the lamellae, leading to a γ grained microstructure following the orientation of variant domains. These reactions also make the number of the variant domains decrease during aging, which remains only two variant domains with perfect-twin relationship.

SURFACE SEGREGATION STUDIES OF SOFC CATHODES: COMBINING SOFT X-RAYS AND ELECTROCHEMICAL IMPEDENCE SPECTROSCOPY

2009 ◽  
Vol 1217 ◽  
Author(s):  
Lincoln Miara ◽  
Louis Piper ◽  
Jacob Nathan Davis ◽  
Laxmikant Saraf ◽  
Tiffany Kaspar ◽  
...  
Keyword(s):  
Single Crystal ◽  
Surface Segregation ◽  
Elevated Temperatures ◽  
Electrochemical Impedance ◽  
Lanthanum Manganite ◽  
X Rays ◽  
Two Phase ◽  
X Ray ◽  
Cation Migration ◽  
X Ray Absorption

AbstractA system to grow heteroepitaxial thin-films of solid oxide fuel cell (SOFC) cathodes on single crystal substrates was developed. The cathode composition investigated was 20% strontium-doped lanthanum manganite (LSM) grown by pulsed laser deposition (PLD) on single crystal (111) yttria-stabilized zirconia (YSZ) substrates. By combining electrochemical impedance spectroscopy (EIS) with x-ray photoemission spectroscopy (XPS) and x-ray absorption spectroscopy XAS measurements, we conclude that electrically driven cation migration away from the two-phase gas-cathode interface results in improved electrochemical performance. Our results provide support to the premise that the removal of surface passivating phases containing Sr2+ and Mn2+, which readily form at elevated temperatures even in O2 atmospheric pressures, is responsible for the improved cathodic performance upon application of a bias.

Equilibration kinetics of TiO2 single crystal at elevated temperatures

2005 ◽  
Vol 242 (11) ◽  
pp. R91-R93 ◽  
Author(s):  
J. Nowotny ◽  
T. Bak ◽  
M. K. Nowotny ◽  
C. C. Sorrell
Keyword(s):  
Single Crystal ◽  
Elevated Temperatures ◽  
Kinetics Of

scholarly journals A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature

2001 ◽  
Vol 687 ◽  
Author(s):  
H.-S. Moon ◽  
L. Anand ◽  
S. M. Spearing
Keyword(s):  
High Temperature ◽  
Constitutive Model ◽  
Single Crystal ◽  
Mechanical Behavior ◽  
Elevated Temperatures ◽  
Single Crystal Silicon ◽  
Operational Environment ◽  
Localized Deformation ◽  
Creep Tests ◽  
Crystal Silicon

AbstractSilicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for the intended operational environment of high temperature and stress. In addition, preliminary work indicates that single crystal silicon has a tendency to undergo localized deformation by slip band formation. Thus it is critical to obtain a better understanding of the mechanical behavior of this material at elevated temperatures in order to properly exploit its capabilities as a structural material. Creep tests in simple compression with n-type single crystal silicon, with low initial dislocation density, were conducted over a temperature range of 900 K to 1200 K and a stress range of 10 MPa to 120 MPa. The compression specimens were machined such that the multi-slip <100> or <111> orientations were coincident with the compression axis. The creep tests reveal that response can be delineated into two broad regimes: (a) in the first regime rapid dislocation multiplication is responsible for accelerating creep rates, and (b) in the second regime an increasing resistance to dislocation motion is responsible for the decelerating creep rates, as is typically observed for creep in metals. An isotropic elasto-viscoplastic constitutive model that accounts for these two mechanisms has been developed in support of the design of the high temperature turbine structure of the MIT microengine.

Mitochondrial activity and heat-shock response during morphogenesis in the pathogenic fungus Histoplasma capsulatum

1992 ◽  
Vol 70 (3-4) ◽  
pp. 207-214 ◽  
Author(s):  
Eduardo J. Patriarca ◽  
George S. Kobayashi ◽  
Bruno Maresca
Keyword(s):  
Heat Shock ◽  
Heat Shock Response ◽  
Elevated Temperatures ◽  
Histoplasma Capsulatum ◽  
Pathogenic Fungus ◽  
Temperature Shift ◽  
Mitochondrial Activity ◽  
Mitochondrial Atpase ◽  
Heat Shock Genes ◽  
Shock Response

Changes in temperature and a variety of other stimuli coordinately induce transcription of a specific set of heat-shock genes in all organisms. In the human fungal pathogen Histoplasma capsulatum, a temperature shift from 25 to 37 °C acts not only as a signal that causes transcription of heat-shock genes, but also triggers a morphological mycelium-to yeast-phase transition. The temperature-induced morphological transition may be viewed as a heat-shock response followed by cellular adaptation to a higher temperature. We have found that by inducing thermotolerance, i.e., an initial incubation at 34 °C, the thermosensitive attenuated Downs strain of H. capsulatum can be made to resemble those of the more temperature-tolerant G222B strain with respect to mitochondrial ATPase activity and electron transport efficiency at elevated temperatures. Furthermore, if the heat-shock response is first elicited by preincubation at milder temperatures or stress, transcription of heat-shock mRNA in mycelial cells of Downs strain that shifted to 37 °C proceeds at rates comparable to those of the virulent strains.Key words: heat shock, thermotolerance, ATPase, 70-kilodalton heat-shock protein, fungal morphogenesis.

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