A Mechanism of Polycrystallization in Fully Lamellar Ti-48Al-8Nb Single Crystal Alloy Aged at Elevated Temperatures

2002 ◽  
Vol 753 ◽  
Author(s):  
Yukinori Yamamoto ◽  
Masao Takeyama ◽  
Takashi Matsuo
Keyword(s):  
Growth Rate ◽  
Diffusion Coefficient ◽  
Single Crystal ◽  
Grain Growth ◽  
Elevated Temperatures ◽  
Volume Diffusion ◽  
Activation Enthalpy ◽  
Lamellar Microstructure ◽  
Aged Sample ◽  
Fully Lamellar

ABSTRACTPolycrystallization mechanism of a fully lamellar microstructure during aging at 1473 and 1273 K has been examined using Ti-48Al-8Nb fully lamellar single crystal, which consists mostly of γ/γ interfaces (variant, perfect-twin and pseudo-twin boundaries). After a certain period of aging, a few γ grains are formed within the lamellae and the lamellar microstructure collapses rapidly to become a γ grained microstructure at both temperatures. An EBSP analysis for aged sample revealed that most of the grains follow the orientation of variant domains in the lamellar microstructure. A kinetic analysis of the grain growth during aging revealed that the activation enthalpy of the growth rate is estimated to be 390 kJ/mol, which is very close to that for volume diffusion coefficient of Al and Nb in γ-TiAl. Based on the results, it is concluded that the formation of the grains is attributed to coarsening of variant domains within the lamellar plates and coalescence of the same variant domains across the lamellae, leading to a γ grained microstructure following the orientation of variant domains. These reactions also make the number of the variant domains decrease during aging, which remains only two variant domains with perfect-twin relationship.

scholarly journals Effect of Composition on the Growth of Single Crystals of (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 by Solid State Crystal Growth

Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2357 ◽  
Author(s):  
Le ◽  
Fisher ◽  
Moon
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Solid State ◽  
Single Crystal ◽  
Single Crystals ◽  
Grain Growth ◽  
Ceramic Powder ◽  
Single Crystal Growth ◽  
Crystal Growth Rate ◽  
Mixed Control

The (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 (NBT-100xST) system is a possible lead-free candidate for actuator applications because of its excellent strain vs. electric field behaviour. Use of single crystals instead of polycrystalline ceramics may lead to further improvement in piezoelectric properties but work on single crystal growth in this system is limited. In particular, the effect of composition on single crystal growth has yet to be studied. In this work, single crystals of (NBT-100xST) with x = 0.00, 0.05, 0.10 and 0.20 were grown using the method of Solid State Crystal Growth. [001]-oriented SrTiO3 single crystal seeds were embedded in (NBT-100xST) ceramic powder, which was then pressed to form pellets and sintered at 1200 °C for 5 min–50 h. Single crystal growth rate, matrix grain growth rate and sample microstructure were examined using scanning and transmission electron microscopy. The results indicate that the highest single crystal growth rate was obtained at x = 0.20. The mixed control theory of grain growth is used to explain the single crystal and matrix grain growth behaviour.

Microstructural Changes of a γ-TiAl Based Alloy with a Fully Lamellar Microstructure Due to Annealing at Elevated Temperatures

2002 ◽  
Vol 753 ◽  
Author(s):  
M. Beschliesser ◽  
F. Appel ◽  
H. Kestler ◽  
H. Clemens
Keyword(s):  
Chemical Composition ◽  
Thermodynamic Equilibrium ◽  
Elevated Temperatures ◽  
Volume Fraction ◽  
Sheet Material ◽  
Lamellar Microstructure ◽  
Microstructural Changes ◽  
Fully Lamellar ◽  
Equilibrium Calculations ◽  
Thermodynamic Equilibrium Calculations

ABSTRACTThe changes of a fully lamellar microstructure caused by annealing at 700 and 800°C for up to 10,000 hours in air have been investigated for a Ti-46.5at.%Al-4at.%(Cr,Nb,Ta,B) sheet material. Changes in morphology as well as in chemical composition and volume fraction of constitutional phases were recorded by means of transmission electron microscopy. Thermodynamic equilibrium calculations performed with the software package ThermoCalc provide baseline information upon both the chemical composition and the amount of constitutional phases of the investigated multi-component alloy. It could be demonstrated that due to high cooling rates which are required to adjust a “defect-free” undisturbed fully lamellar microstructure, composition and amount of the α2 phase are far from the thermodynamic equilibrium. However, during high temperature exposure the composition as well as the amount of α2 phase move towards the values predicted by the calculation. Furthermore, former perfectly shaped γ/α2 lamellae interfaces are disturbed, α2 lamellae decompose and new phases appear instead. Dislocations emitted from dissolving α2 lamellae move into the γ lamellae. Mechanisms responsible for decomposition of lamellae and formation of new phases are explained by thermodynamic equilibrium calculations and diffusion considerations. Finally, results of tensile tests conducted at room temperature and 700°C on long-term annealed specimens are presented and discussed. This work is a basis for understanding microstructural changes and their impact on mechanical properties of γ-TiAl based alloys with a fully lamellar microstructure during service at elevated temperatures.

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

The threshold energy for atom displacement in fcc metals

1990 ◽  
Vol 48 (4) ◽  
pp. 530-531
Author(s):  
Wilfried Sigle ◽  
Matthias Hohenstein ◽  
Alfred Seeger
Keyword(s):  
Growth Rate ◽  
Elevated Temperatures ◽  
Threshold Energy ◽  
Dislocation Loops ◽  
Absolute Minimum ◽  
Voltage Electron ◽  
Atom Displacement ◽  
Electron Microscopes ◽  
Fcc Metal

Prolonged electron irradiation of metals at elevated temperatures usually leads to the formation of large interstitial-type dislocation loops. The growth rate of the loops is proportional to the total cross-section for atom displacement,which is implicitly connected with the threshold energy for atom displacement, Ed . Thus, by measuring the growth rate as a function of the electron energy and the orientation of the specimen with respect to the electron beam, the anisotropy of Ed can be determined rather precisely. We have performed such experiments in situ in high-voltage electron microscopes on Ag and Au at 473K as a function of the orientation and on Au as a function of temperature at several fixed orientations.Whereas in Ag minima of Ed are found close to <100>,<110>, and <210> (13-18eV), (Fig.1) atom displacement in Au requires least energy along <100>(15-19eV) (Fig.2). Au is thus the first fcc metal in which the absolute minimum of the threshold energy has been established not to lie in or close to the <110> direction.

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

Measurement of growth rates for single crystals and pressed tablets of CuSO4.5 H2O on a rotating disc

1989 ◽  
Vol 54 (11) ◽  
pp. 2951-2961 ◽  
Author(s):  
Miloslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Single Crystals ◽  
Growth Rates ◽  
Diffusion Coefficients ◽  
Preferred Orientation ◽  
Rotating Disc ◽  
Dissolution Rates ◽  
Rates Of Growth ◽  
Good Agreement

Measured growth and dissolution rates of single crystals and tablets were used to calculate the overall linear rates of growth and dissolution of CuSO4.5 H2O crystals. The growth rate for the tablet is by 20% higher than that calculated for the single crystal. It has been concluded that this difference is due to a preferred orientation of crystal faces on the tablet surface. Calculated diffusion coefficients and thicknesses of the diffusion and hydrodynamic layers in the vicinity of the growing or dissolving crystal are in good agreement with published values.

A Model of Wheat Grain Growth and Its Applications to Different Temperature and Carbon Dioxide Levels

1995 ◽  
Vol 22 (5) ◽  
pp. 843 ◽  
Author(s):  
YP Wang ◽  
RM Gifford
Keyword(s):  
Growth Rate ◽  
Grain Growth ◽  
Temperature Response ◽  
Rate Sensitivity ◽  
Temperature Sensitive ◽  
Potential Growth ◽  
Carbon Supply ◽  
The Difference ◽  
Carbon Dioxide Levels ◽  
Kernel Growth

Kernel growth after anthesis is simulated as a function of the potential kernel growth rate, current photosynthate production and mobilisation of stored reserves. The potential growth rate of the kernel is simulated as two temperature-sensitive processes, cell production and cell growth. The difference between the potential and actual growth rates of the kernel depends on the carbon supply to the free space of the kernel endosperm, while the carbon supply is itself affected by the actual kernel growth rate. Sensitivity analysis showed that the growth rate of the grain per plant is most sensitive to the potential growth rate of the kernel and number of kernels per plant. This model is able to simulate the observed rates of grain growth and leaf senescence from anthesis to physiological maturity for wheat plants grown in two CO2 concentrations. The simulated temperature response of grain growth agrees well with the experimenal observations.

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