Design and modeling of an optical band gap matched temperature controlled indoor concentrated light transmission system for photovoltaic energy production

Optik ◽  
2019 ◽  
Vol 176 ◽  
pp. 502-511 ◽  
Author(s):  
Hifsa Shahid ◽  
Muhammad Kamran ◽  
Munazza Sadaf ◽  
Muhammad Irfan Abid ◽  
Muhammad Rayyan Fazal ◽  
...  
Keyword(s):  
Band Gap ◽  
Energy Production ◽  
Optical Band Gap ◽  
Light Transmission ◽  
Transmission System ◽  
Photovoltaic Energy ◽  
Temperature Controlled

Optical Band Gap of Wurtzite Zinc Sulphide Doped with Lanthanum Ions

2012 ◽  
Vol 622-623 ◽  
pp. 752-756
Author(s):  
George Varughese ◽  
Sreeja R. Aswathy ◽  
K.T. Usha ◽  
A.S. Kumar
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Light Transmission ◽  
Photo Luminescence ◽  
Chemical Precipitation ◽  
High Refractive Index ◽  
Zinc Sulphide ◽  
Zns Nanoparticles ◽  
Visible Absorption ◽  
Lanthanum Ions

Pure and doped Zinc Sulfide (ZnS) quantum dots have attracted increasing interest from researchers working on various scientific and engineering applications in electronics, nonlinear optical devices for communication, and optical computers. In this study, ZnS nanoparticles doped with lanthanum (ZnS:La) with approximately 11 nm size was produced at 150°C by chemical precipitation route. Zinc Sulphide is an extensively studied group II-VI semiconductor with wide application in field of Photo Luminescence (PL),Electro Luminescence(EL) and Cathodo Luminescence (CL). It is an excellent light transmission material with high refractive index 2.27. XRD, SEM, FTIR UV-Vis and EDS characterize the samples.In this study, the UV–Visible absorption spectra of ZnS:La showed a red shift in the absorption shoulder compared with the spectra of undoped samples. ZnS nanoparticles could be doped with lanthanum ions during synthesis without altering the X-ray diffraction (XRD) patterns of ZnS. Also, the XRD pattern of the powders showed cubic crystal structures for ZnS:La. The Optical band gap has been found to be 2.7 eV. It was found that energy Band gap Eg decreases with doping of La.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

scholarly journals The Combination of Building Greenery and Photovoltaic Energy Production—A Discussion of Challenges and Opportunities in Design

2021 ◽  
Vol 13 (3) ◽  
pp. 1537
Author(s):  
Irene Zluwa ◽  
Ulrike Pitha
Keyword(s):  
Energy Production ◽  
Substrate Surface ◽  
Relevant Literature ◽  
Green Roofs ◽  
Cooling Effect ◽  
Photovoltaic Energy ◽  
Pv Systems ◽  
System A ◽  
Challenges And Opportunities ◽  
Building Surfaces

In the case of building surfaces, the installation of green roofs or green facades can be used to reduce the temperature of the environment and the building. In addition, introducing photovoltaic energy production will help to reduce CO2 emissions. Both approaches (building greenery and photovoltaic energy production) compete, as both of them are located on the exterior of buildings. This paper aims to give an overview of solutions for the combination of building greenery (BG) systems and photovoltaic (PV) panels. Planning principles for different applications are outlined in a guideline for planning a sustainable surface on contemporary buildings. A comprehensive literature review was done. Identified solutions of combinations were systematically analysed and discussed in comparison with additional relevant literature. The main findings of this paper were: (A) BG and PV systems with low sub-construction heights require shallow substrates/low growing plants, whereas in the case of the combination of (a semi)-intensive GR system, a distance of a minimum 60 cm between the substrate surface and lower panel edge is recommended; (B) The cooling effect of the greenery depends on the distance between the PV and the air velocity; (C) if the substrate is dry, there is no evapotranspiration and therefore no cooling effect; (D) A spectrum of different PV systems, sub-constructions, and plants for the combination of BG and PV is necessary and suitable for different applications shown within the publication.

scholarly journals Polymer Thermal Treatment Production of Cerium Doped Willemite Nanoparticles: An Analysis of Structure, Energy Band Gap and Luminescence Properties

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Band Gap ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Blue Emission ◽  
Green Emission ◽  
Band Gap Energy ◽  
Solid State Lighting ◽  
Gap Energy

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.

scholarly journals Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Effect ◽  
Band Gap ◽  
Raman Spectra ◽  
Quantum Interference ◽  
Optical Band Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Electron Phonon Coupling ◽  
Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

scholarly journals ZnSnN 2 in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap

2021 ◽  
pp. 2100015
Author(s):  
Vegard Skiftestad Olsen ◽  
Vetle Øversjøen ◽  
Daniela Gogova ◽  
Béla Pécz ◽  
Augustinas Galeckas ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Band Gap ◽  
Optical Band Gap ◽  
Real Space ◽  
Lattice Constants ◽  
Space Lattice

scholarly journals Role of Bi3+ ions on structural, optical, photoluminescence and electrical performance of Cd0.9-xZn0.1BixS QDs

2021 ◽  
Vol 3 (7) ◽  
Author(s):  
A. Krishnamoorthy ◽  
P. Sakthivel ◽  
I. Devadoss ◽  
V. M. Anitha Rajathi
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Electrical Performance ◽  
Chemical Route ◽  
Red Emission ◽  
The Mean ◽  
Cubic Structure ◽  
Cyclic Voltammetry Analysis

AbstractIn this work, the Cd0.9-xZn0.1BixS QDs with different compositions of Bi3+ ions (0 ≤ x ≤ 0.05) were synthesized using a facile chemical route. The prepared QDs were characterized for analyzing the structural, morphological, elemental, optical, band gap, photoluminescence and electrochemical properties. XRD results confirmed that the Cd0.9-xZn0.1BixS QDs have a cubic structure. The mean crystallite size was increased from ~ 2 to ~ 5 nm for the increase of Bi3+ ions concentration. The optical transmittance behavior was decreased with increasing Bi3+ ions. The scanning electron microscope images showed that the prepared QDs possessed agglomerated morphology and the EDAX confirmed the presence of doped elements as per stoichiometry ratio. The optical band gap was slightly blue-shifted for initial substitution (Bi3+  = 1%) of Bi3+ ions and red-shifted for further increase of Bi3+ compositions. The optical band gap was ranged between 3.76 and 4.0 eV. High intense red emission was received for Bi3+ (1%) doped Zn:CdS QDs. The red emission peaks were shifted to a higher wavelength side due to the addition of Bi3+ ions. The PL emission on UV-region was raised for Bi3+ (1%) and it was diminished. Further, a violet (422 nm) and blue (460 nm) emission were received for Bi3+ ions doping. The cyclic voltammetry analysis showed that Bi3+ (0%) possessed better electrical properties than other compositions of Bi3+ ions.

Sign in / Sign up

Export Citation Format

Share Document