Microstructural Properties of PZT Thin Films Deposited on LaNiO3-Coated Substrates

The modified polymeric precursor method (Pechini method) was successfully used for the preparation of epitaxial and polycrystalline ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Films were deposited on LaNiO3 (LNO) – coated silicium (1 0 0) and platinum substrates (Pt (1 1 1)/Ti/SiO2/Si) by spin coating technique. LNO electrodes were also prepared by the Pechini method and treated under different thermal treatment conditions to obtain films with different structural and microstructural properties. Investigation of PZT microstructure was performed as a function of orientation and morphology of the bottom electrode, as well as of thermal treatment conditions. Grain size and morphology were analyzed by AFM, while the quality and orientation of PZT films were determined by GIXRD analysis. It has been found that the proposed thermal treatment on a hot plate, with slow heating rate and long annealing time, can result in the formation of epitaxial PZT films on Si and LNO-coated Si substrates.

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Large Area PbZr1−xTixO3 (PZT) Thin Films Deposited by MOCVD Processes

MRS Proceedings ◽

10.1557/proc-493-327 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 1

Author(s):

Tingkai Li ◽

Elliot Hartford ◽

Pete Zawadzki ◽

Richard A. Stall

Keyword(s):

Thin Films ◽

Perovskite Phase ◽

Process Conditions ◽

Large Area ◽

Homogeneous Microstructure ◽

Pzt Thin Films ◽

Si Substrates ◽

Pt Electrodes ◽

Pzt Films ◽

Ray Patterns

ABSTRACTAn advanced oxide MOCVD tool and processes have been developed to deposit large area PbZr1−xTixO3 (PZT) thin films on 6” Si and Pt/Ti/SiO2/Si substrates. The experimental results show the advanced oxide MOCVD tool can achieve the growth of PZT thin films with thickness uniformity of 2% and composition uniformity better that 3% on both 6” Si and Pt/Ti/SiO,/Si wafers at high deposition rates. X-ray patterns showed a single PZT perovskite phase, and AFM showed homogeneous microstructure and low surface roughness. Typically, 300 nm thick PZT films with a grain size about 0.3 μm have Pr greater than 20 - 30 μC/cm2 at 5V, a dielectric constant around 1000, low coercive field (Ec 50 - 70 kV/cm), and fatigue rate (the normalized polarization is about 0.6 after 1010 cycles at 5 V), and leakage current of 2 - 6×lO−7 A/cm2 at 150 kV/cm and room temperature on Pt electrodes. In addition, the effects of reactor design and process conditions on the thickness and composition uniformity, as well as the m i ero structure and properties were also investigated.

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Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

Materials Research ◽

10.1590/s1516-14392004000200025 ◽

2004 ◽

Vol 7 (2) ◽

pp. 363-367 ◽

Cited By ~ 2

Author(s):

Antonio Leondino Bacichetti Junior ◽

Manuel Henrique Lente ◽

Ricardo Gonçalves Mendes ◽

Pedro Iris Paulin Filho ◽

José Antonio Eiras

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Thermal Treatment ◽

Pzt Thin Films ◽

Structural And Electrical Properties

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A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.650 ◽

2010 ◽

Vol 663-665 ◽

pp. 650-653

Author(s):

Jin Moo Byun ◽

Jeong Sun Han ◽

Jae Hyoung Park ◽

Seong Eui Lee ◽

Hee Chul Lee

Keyword(s):

Thin Films ◽

Piezoelectric Coefficient ◽

Energy Harvester ◽

Sol Gel ◽

Pure Perovskite Structure ◽

Pzt Thin Films ◽

Gel Method ◽

Sol Gel Method ◽

Si Substrates ◽

Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

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Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

MRS Proceedings ◽

10.1557/proc-243-519 ◽

1991 ◽

Vol 243 ◽

Author(s):

C. K. Chiang ◽

W. Wong-Ng ◽

L. P. Cook ◽

P. K. Schenck ◽

H. M. Lee ◽

...

Keyword(s):

Thin Films ◽

Amorphous Material ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Linear Shrinkage ◽

Laser Deposition ◽

Amorphous Films ◽

Pzt Thin Films ◽

Si Substrates ◽

Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

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Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(111)/TiOx/SiO2/Si substrates

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2009.03.170 ◽

2009 ◽

Vol 482 (1-2) ◽

pp. 253-255 ◽

Cited By ~ 14

Author(s):

N.K. Karan ◽

R. Thomas ◽

S.P. Pavunny ◽

J.J. Saavedra-Arias ◽

N.M. Murari ◽

...

Keyword(s):

Thin Films ◽

Grain Growth ◽

Pzt Thin Films ◽

Si Substrates ◽

Fatigue Endurance

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Integrated 32 × 32 pyroelectric ir sensor array in nmos/jfet circuitry using highly (001) oriented pzt thin films on epitaxial y-al2o3/si substrates

2008 17th IEEE International Symposium on the Applications of Ferroelectrics ◽

10.1109/isaf.2008.4693727 ◽

2008 ◽

Author(s):

N. Kawazu ◽

K. Kikuchi ◽

D. Akai ◽

K. Sawada ◽

M. Ishida

Keyword(s):

Thin Films ◽

Sensor Array ◽

Pzt Thin Films ◽

Si Substrates ◽

Ir Sensor

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1104 Micro-actuator using piezoelectric PZT thin films deposited on Si substrates

The Proceedings of the Conference on Information Intelligence and Precision Equipment IIP ◽

10.1299/jsmeiip.2005.40 ◽

2005 ◽

Vol 2005 (0) ◽

pp. 40-41

Author(s):

Hironobu ENDO ◽

Yoshiro TAZAWA ◽

Takaaki SUZUKI ◽

Isaku KANNO ◽

Hidetoshi KOTERA

Keyword(s):

Thin Films ◽

Pzt Thin Films ◽

Micro Actuator ◽

Si Substrates

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Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

MRS Proceedings ◽

10.1557/proc-493-189 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 2

Author(s):

C. H. Lin ◽

B. M. Yen ◽

Haydn Chen ◽

T. B. Wu ◽

H. C. Kuo ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Fatigue Behavior ◽

Chemical Vapor ◽

Dielectric Constants ◽

Preferential Orientation ◽

Organic Chemical ◽

Pzt Thin Films ◽

Si Substrates ◽

Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

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Preparation of pzt thin films on Pt/Ti/SiO2 and Pt/SiO2 Substrates by ECR Plasma Enhanced DC Magnetron Multi-target Reactive Sputtering

MRS Proceedings ◽

10.1557/proc-441-205 ◽

1996 ◽

Vol 441 ◽

Author(s):

Sung-Tae Kim ◽

Hyun-Ho Kim ◽

Moon-Yong Lee ◽

Won-Jong Lee

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Electron Cyclotron Resonance ◽

Perovskite Phase ◽

Early Stage ◽

Reactive Sputtering ◽

Deposition Process ◽

Pzt Thin Films ◽

Si Substrates ◽

Ecr Plasma

AbstractPerovskite-phase lead zirconate titanate (PZT) thin films were fabricated at 4751C by the electron cyclotron resonance (ECR) plasma enhanced DC magnetron multi-target reactive sputtering method on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates. Stoichiometric perovskite PZT films were readily obtained on Pt/Ti/SiO2/Si substrates because Ti atoms which were out-diffused to the Pt surface facilitated Pb incorporation by forming lead titanate at the early stage of deposition process. Activation of oxygen by ECR plasma facilitated the oxidation reaction and Pb incorporation into the film. Thus perovskite-phase PZT can be obtained on the Pt/SiO2/Si substrate.

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Electrooptic Properties of Pzt thin Films for Image Storage Applications

MRS Proceedings ◽

10.1557/proc-243-73 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 9

Author(s):

D. Dimos ◽

R.W. Schwartz

Keyword(s):

Thin Films ◽

Sol Gel ◽

Ferroelectric Films ◽

Image Storage ◽

Pzt Thin Films ◽

Hysteresis Behavior ◽

Pzt Films ◽

Induced Changes

AbstractThe photocurrent responses, photo-induced changes in hysteresis behavior, and electrooptic (birefringence) effects of sol-gel derived PZT films have been characterized as part of an effort to evaluate ferroelectric films for image storage and processing applications.

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