The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.

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Effect of sputtering power on crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO transparent conducting thin films for optoelectronic devices

Journal of Applied Physics ◽

10.1063/1.4977104 ◽

2017 ◽

Vol 121 (8) ◽

pp. 085302 ◽

Cited By ~ 24

Author(s):

Yu Min Hu ◽

Jung Yu Li ◽

Nai Yun Chen ◽

Chih Yu Chen ◽

Tai Chun Han ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Optoelectronic Devices ◽

Optical And Electrical Properties ◽

Intrinsic Defects ◽

Transparent Conducting ◽

Sputtering Power ◽

Doped Zno

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Effect of lanthanum substrates on the structural, optical and electrical properties of copper selenide thin films designed for 5G technologies

Optical and Quantum Electronics ◽

10.1007/s11082-021-03375-z ◽

2021 ◽

Vol 54 (1) ◽

Author(s):

A. F. Qasrawi ◽

Arwa N. Abu Ghannam

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Copper Selenide ◽

Optical And Electrical Properties ◽

5G Technologies

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RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

10.21203/rs.3.rs-185059/v1 ◽

2021 ◽

Author(s):

Chunhu Zhao ◽

Junfeng Liu ◽

Yixin Guo ◽

Yanlin Pan ◽

Xiaobo Hu ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Carrier Concentration ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Band Model ◽

Deposition Condition ◽

Optical And Electrical Properties ◽

Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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