High-performance bismuth telluride thermoelectric thin films fabricated by using the two-step single-source thermal evaporation

2020 ◽  
Vol 819 ◽  
pp. 153027 ◽  
Author(s):  
Ping Fan ◽  
Peng-cheng Zhang ◽  
Guang-xing Liang ◽  
Fu Li ◽  
Yue-xing Chen ◽  
...  
Author(s):  
Peng Gao ◽  
Zhenyu Hu ◽  
Longhui Deng ◽  
Tingjun Wu ◽  
Qikai Li ◽  
...  

The preparation of high-performance thermoelectric thin films can be challenging. Herein, we report the preparation, characterization, and thermoelectric performance of morphology-controlled bismuth sulfide (Bi2S3) thin films using a single-source precursor...


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Hua-Bin Lan ◽  
Zheng-Hua Su ◽  
Huan-Xin Peng ◽  
Jing-Ting Luo ◽  
...  

AbstractHybrid two-dimensional (2D) halide perovskites has been widely studied due to its potential application for high performance perovskite solar cells. Understanding the relationship between microstructural and opto-electronic properties is very important for fabricating high-performance 2D perovskite solar cell. In this work, the effect of solvent annealing on grain growth was investigated to enhance the efficiency of photovoltaic devices with 2D perovskite films based on (BA)2(MA)3Pb4I13 prepared by single-source thermal evaporation. Results show that solvent annealing with the introduction of solvent vapor can effectively enhance the crystallization of the (BA)2(MA)3Pb4I13 thin films and produce denser, larger-crystal grains. The thin films also display a favorable band gap of 1.896 eV, which benefits for increasing the charge-diffusion lengths. The solvent-annealed (BA)2(MA)3Pb4I13 thin-film solar cell prepared by single-source thermal evaporation shows an efficiency range of 2.54–4.67%. Thus, the proposed method can be used to prepare efficient large-area 2D perovskite solar cells.


Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  

2020 ◽  
Vol 31 (19) ◽  
pp. 16968-16974
Author(s):  
Zhuang-hao Zheng ◽  
Dong Yang ◽  
Xiao-lan Huang ◽  
Fu Li ◽  
Yue-Xing Chen ◽  
...  

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.


1990 ◽  
Vol 5 (3) ◽  
pp. 511-514 ◽  
Author(s):  
Didarul Islam ◽  
C. E. Brient ◽  
R. L. Cappelletti

The preparation of multicomponent chalcogenide glassy thin films from bulk targets by laser ablation is described. The film stoichiometries are characterized by proton-induced x-ray emission (PIXE). Compared to single source thermal evaporation, laser ablation is found to preserve starting stoichiometries in the resulting thin films far more accurately. Thermally evaporated films were studied both by PIXE and by energy dispersed x rays (EDX) produced in a scanning electron microscope, and the results of these two analytical techniques compare well.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Yuki Kimura ◽  
Ryotaro Mori ◽  
Susumu Yonezawa ◽  
Hayato Yabuki ◽  
Hiromasa Namiki ◽  
...  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Ping Fan ◽  
Di Gu ◽  
Guang-Xing Liang ◽  
Jing-Ting Luo ◽  
Ju-Long Chen ◽  
...  

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