Compositional Engineering of Metal-Xanthate Precursors toward (Bi1-xSbx)2S3 (0≤x≤0.05) Films with Enhanced Room-Temperature Thermoelectric Performance

2022 ◽  
Author(s):  
Peng Gao ◽  
Zhenyu Hu ◽  
Longhui Deng ◽  
Tingjun Wu ◽  
Qikai Li ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Single Source ◽  
Bismuth Sulfide ◽  
Single Source Precursor ◽  
Metal Xanthate ◽  
Thermoelectric Thin Films

The preparation of high-performance thermoelectric thin films can be challenging. Herein, we report the preparation, characterization, and thermoelectric performance of morphology-controlled bismuth sulfide (Bi2S3) thin films using a single-source precursor...

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2.

ChemInform ◽  
2003 ◽  
Vol 34 (9) ◽  
Author(s):  
Oh-Shim Joo ◽  
Kwang-Deog Jung ◽  
Sung-Hoon Cho ◽  
Je-Hong Kyoung ◽  
Chang-Kyu Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Single Source ◽  
Single Source Precursor ◽  
New Type

MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9154-9158 ◽  
Author(s):  
M. Lemberger ◽  
S. Thiemann ◽  
A. Baunemann ◽  
H. Parala ◽  
R.A. Fischer ◽  
...  
Keyword(s):  
Thin Films ◽  
Tantalum Nitride ◽  
Single Source ◽  
Metal Electrodes ◽  
Single Source Precursor

High-performance zinc antimonide thermoelectric thin films achieved by a layer-by-layer combination reaction approach

2020 ◽  
Vol 31 (19) ◽  
pp. 16968-16974
Author(s):  
Zhuang-hao Zheng ◽  
Dong Yang ◽  
Xiao-lan Huang ◽  
Fu Li ◽  
Yue-Xing Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Layer By Layer ◽  
Zinc Antimonide ◽  
Thermoelectric Thin Films

scholarly journals Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

2019 ◽  
Vol 7 (48) ◽  
pp. 15383-15383
Author(s):  
Shun Han ◽  
Xiaoling Huang ◽  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Shijie Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Uv Detectors

Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

2005 ◽  
Vol 23 (6) ◽  
pp. 1619-1625 ◽  
Author(s):  
Sreenivas Jayaraman ◽  
Yu Yang ◽  
Do Young Kim ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Hafnium Diboride ◽  
Single Source Precursor

Synthesis of Undoped and Manganese-Doped HgTe Nanoparticles Using [Hg(TeCH2CH2NMe2)2] as a Single Source Precursor

2008 ◽  
Vol 8 (9) ◽  
pp. 4500-4505 ◽  
Author(s):  
Gotluru Kedarnath ◽  
Sandip Dey ◽  
Vimal K. Jain ◽  
Gautam K. Dey ◽  
Ramakant M. Kadam
Keyword(s):  
Particle Size ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Lattice Parameter ◽  
Crystalline Solid ◽  
Single Source ◽  
Epr Spectrum ◽  
Single Source Precursor ◽  
Ferromagnetic Ordering ◽  
Mn Doped

The Reaction of [HgCl2(tmeda)] with NaTeCH2CH2NMe2 gave a mercury tellurolate, [Hg(TeCH2CH2·NMe2)2] (1) as a yellow crystalline solid, which was characterized by elemental analysis, UV-vis, mass and NMR (1H, 13C, 125Te, 199Hg) spectroscopy. Thermolysis of 1 in hexadecylamine (HDA) at 90 °C in the absence and presence of Mn(OAc)2·4H2O gave undoped and Mn-doped HgTe nanoparticles which were characterized by XRD, EDAX, TEM, EPR and magnetic measurements. These particles could be synthesized with mean particle size of 6–7 nm (from TEM). Manganese substitution at Hg site in HgTe lead to a linear decrease in lattice parameter with increasing concentration of Mn. Magnetization measurements showed ferromagnetic ordering at room temperature with very small coercive field (Hc, 50 Oe) for Hg0.973Mn0.027 Te sample. This sample also exhibited distinct ferromagnetic resonance (FMR) in the EPR spectrum.

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