scholarly journals Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy

2006 ◽  
Vol 36 (3b) ◽  
pp. 1070-1073 ◽  
Author(s):  
L. Tirado-Mejía ◽  
J. G. Ramírez ◽  
M. E. Gómez ◽  
H. Ariza-Calderón
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Morphology Analysis

Growth Peculiarities and Magnetic Properties of (LuBi)3Fe5O12 Films by LPE Method

2013 ◽  
Vol 200 ◽  
pp. 256-260 ◽  
Author(s):  
I.I. Syvorotka ◽  
Igor M. Syvorotka ◽  
S.B. Ubizskii
Keyword(s):  
Magnetic Properties ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Film Thickness ◽  
Faraday Rotation ◽  
Liquid Phase Epitaxy ◽  
Magnetization Reversal ◽  
Room Temperature ◽  
Mirror Surface ◽  
Different Types

The series of (LuBi)3Fe5O12 film were grown on (111) oriented GGG substrate with diameters 1, 2 and 3 inch by liquid phase epitaxy using Bi2O3-base flux. Different types of surface morphology on the grown films were observed. The films’ surface was smooth and mirror while the film thickness was less than 13 μm and becomes rough for thickness above this value. The grown films were characterized by measuring magnetization loops and magneto-optic Faraday rotation under magnetization reversal as well as ferromagnetic resonance (FMR). All films with mirror surface demonstrate the in-plane magnetization, high Faraday rotation and FMR linewidth about 0.8 Oe at 9.1 GHz and room temperature.

Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

2004 ◽  
Vol 266 (4) ◽  
pp. 467-474 ◽  
Author(s):  
Toru Ujihara ◽  
Eiji Kanda ◽  
Kazuo Obara ◽  
Kozo Fujiwara ◽  
Noritaka Usami ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Silicon Thin Films

LPE Growth of Textured KNbO3 Film Using SrTiO3 Substrate and V2O5 Flux

2006 ◽  
Vol 11-12 ◽  
pp. 109-112
Author(s):  
T. Hibino ◽  
Kenichi Kakimoto ◽  
Hitoshi Ohsato
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Growth Rate ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Film Growth ◽  
Lower Growth ◽  
Lower Growth Temperature

KNbO3 thin films were grown on (100) and (110) SrTiO3 substrates by liquid phase epitaxy (LPE) technique. The film orientation and surface morphology were characterized by XRD and AFM, respectively. The limited phase diagram of K2O-Nb2O5-V2O5 system was prepared by DTA measurement to investigate the effect of V2O5 flux on the LPE growth of KNbO3 film. The use of V2O5 flux enhanced a film growth rate at lower growth temperature.

LPE Growth of Mixed Composition HI-V “Virtual Substrates” for MID-Infrared Optoelectronic Devices

1996 ◽  
Vol 450 ◽  
Author(s):  
Y. Mao ◽  
A. Krier
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Liquid Phase Epitaxy ◽  
Lattice Mismatch ◽  
Growth Parameters ◽  
Optoelectronic Devices ◽  
Mixed Composition ◽  
Mid Infrared ◽  
Photoluminescence Efficiency

ABSTRACTLiquid phase epitaxy can be effectively used to grow a thick graded ternary or quaternary buffer layer to provide a “virtual substrate” for subsequent device epitaxy. Grading characteristics of InGaAs, InAsSb and InAsSbP epitaxial layers grown by LPE are discussed. The effects of the principal LPE growth parameters on epiiayer thickness, surface morphology and composition, lattice-mismatch and photoluminescence efficiency were investigated and are described.

Investigation of surface morphology of InAs1-x-ySbxPy epilayers grown by liquid phase epitaxy

2020 ◽  
Vol 534 ◽  
pp. 125464
Author(s):  
Hao Xie ◽  
Hongyu Lin ◽  
Qianqian Xu ◽  
Hongbo Lu ◽  
Yan Sun ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy

Surface Morphology of LPE SiGe Layers Grown on (100) Si Substrates

1997 ◽  
Vol 485 ◽  
Author(s):  
A. M. Sembian ◽  
I. Silier ◽  
K. Davies ◽  
A. Gutjahr ◽  
K. Lyutovich ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Cooling Rate ◽  
Liquid Phase Epitaxy ◽  
Growth Conditions ◽  
Cooling Rates ◽  
Si Substrates ◽  
Significant Change

AbstractWe have investigated the surface morphology of thick SiGe layers grown on Si(100) substrates. SiGe layers containing different Ge concentrations (from 0 to 16 at.%) and having thickness of about 15μm are prepared by liquid phase epitaxy (LPE) method using various growth conditions. The wavelength of undulation of SiGe layers is found to be increasing when we adopt low cooling rates during LPE process. The roughness of the layer does not show any significant change with cooling rate.

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