Reduction of threading edge dislocation density in n-type GaN by Si delta-doping

2006 ◽  
Vol 286 (2) ◽  
pp. 255-258 ◽  
Author(s):  
Y.B. Pan ◽  
Z.J. Yang ◽  
Z.T. Chen ◽  
Y. Lu ◽  
T.J. Yu ◽  
...  
2010 ◽  
Vol 247 (7) ◽  
pp. 1710-1712 ◽  
Author(s):  
Richard Gutt ◽  
Lutz Kirste ◽  
Thorsten Passow ◽  
Michael Kunzer ◽  
Klaus Köhler ◽  
...  

2020 ◽  
Vol 551 ◽  
pp. 125893
Author(s):  
Yangfeng Li ◽  
Shen Yan ◽  
Xiaotao Hu ◽  
Yimeng Song ◽  
Zhen Deng ◽  
...  

2014 ◽  
Vol 989-994 ◽  
pp. 387-390
Author(s):  
Yon Gan Li ◽  
Xiang Qian Xiu ◽  
Xue Mei Hua ◽  
Shi Ying Zhang ◽  
Shi Pu Gu ◽  
...  

The dislocation density of GaN thick films has been measured by high-resolution X-ray diffraction. The results show that both the edge dislocations and the screw dislocation reduce with increasing the GaN thickness. And the edge dislocations have a larger fraction of the total dislocation densities, and the densities for the edge dislocation with increasing thickness reduce less in contrast with those for the screw dislocation.


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 895
Author(s):  
Shota Sugiyama ◽  
Toshio Ogawa ◽  
Lei He ◽  
Zhilei Wang ◽  
Yoshitaka Adachi

We conducted quantitative analysis of the recovery process during pure iron annealing using the modified Williamson-Hall and Warren-Averbach methods. We prepared four types of specimens with different dislocation substructures. By increasing the annealing temperature, we confirmed a decrease in dislocation density. In particular, screw-dislocation density substantially decreased in the early stage of the recovery process, while edge-dislocation density gradually decreased as annealing temperature increased. Moreover, changes in hardness during the recovery process mainly depended on edge-dislocation density. Increases in annealing temperature weakly affected the dislocation arrangement parameter and crystallite size. Recovery-process modeling demonstrated that the decrease in screw-dislocation density during the recovery process was mainly dominated by glide and/or cross-slip with dislocation core diffusion. In contrast, the decrease in edge-dislocation density during the recovery process was governed by a climbing motion with both dislocation core diffusion and lattice self-diffusion. From the above results, we succeeded in quantitatively distinguishing between edge- and screw-dislocation density during the recovery process, which are difficult to distinguish using transmission electron microscope and electron backscatter diffraction.


1996 ◽  
Vol 449 ◽  
Author(s):  
M.S. Goorsky ◽  
A.Y. Polyakov ◽  
M. Skowronski ◽  
M. Shin ◽  
D.W. Greve

ABSTRACTWe demonstrate the use of triple axis diffraction measurements, including Φ scans (in which the sample is rotated about an axis perpendicular to its surface) to assess the crystal perfection of wurtzite GaN layers on sapphire grown using different pre-nitridation growth treatments by or-ganometallic vapor phase epitaxy. The Φ scans determine the in-plane misorientation angles between the crystallites and hence provide information on the edge dislocation density. Using glancing incidence (1014) and (1015) reflections, we determined that the misorientation among the GaN crystallites decreases with increasing layer thickness and that the pre-nitridation conditions control the initial level of misorientation. Triple axis ω and ω-2θ scans around the (0002) reflection did not show a systematic trend with increasing layer thickness. However, layers grown without a pre-nitridation step tended to exhibit higher values of both mosaic spread and strain. The appropriate asymmetric reflections for GaN-based Φ scan measurements are determined using structure factor calculations, which are presented here.


2016 ◽  
Vol 878 ◽  
pp. 83-88 ◽  
Author(s):  
Guang Lu Jia ◽  
Bing Li ◽  
Ju Fan Zhang

Compared to perfect crystal lattice, typical edge dislocation structure has been modeled by quantum chemistry simulation in order to analyze the influence of crystal structure defects on removal process in atmospheric pressure plasma polishing (APPP). The Partial density of states (PDOS), number of states, average number of bonding electrons and energy have been calculated and analyzed further for these models. The analysis results reveal that silicon crystal with edge dislocation can be etched more easily than that of perfect crystal lattice. It is also found that the removal rate of sample with higher dislocation density is larger than that of lower dislocation density in the same experiment conditions. Thus, theoretical simulation demonstrates that structure dislocation is helpful for raising the etching rate, which accords well with testifying experiments results. But maybe structure dislocation could deteriorate surface roughness to some extent in initial stage of machining, as the dislocation structure is usually etched unevenly, although this is just a transition period.


2013 ◽  
Vol 205-206 ◽  
pp. 429-434 ◽  
Author(s):  
Ji Hyun Hur ◽  
Myoung Jae Lee ◽  
Seong Ho Cho ◽  
Young Soo Park

We present a model for charged dislocations effects on III-V compound semiconductor based FinFETs performance. The model is developed to obtain momentum relaxation time and, from it, key device performance parameters such as effective mobility, threshold voltage, and finally saturation drain current. We find out that charged threading edge dislocation density of a FinFET channel should be smaller than about 107cm-2to ignore the dislocation scattering impact on the device performance which is roughly one order more strict condition than previously known condition for wurtzite GaN.


1960 ◽  
Vol 13 (3) ◽  
pp. 613 ◽  
Author(s):  
AK Head

The stress fields around some edge dislocation arrays have been calculated using the approximation of Leibfried (1951) that the discrete dislocations are replaced by a continuous dislocation density. Haasen and Leibfried (1954) have calculated one such stress distribution (corresponding to (ti) below) via the stress function which they evaluated as a superposition integral over the dislocation distribution of the stress function of an infinitesimal dislocation. The results given here were evaluated directly as the superposition of the stress fields of the infinitesimal dislocations making up the distribution. Like most of the integrals which occur in this approximation, they can be evaluated most readily by contour integration (Haasen and Leibfried 1954). A multiple coordinate system is used and is such that the results can be written compactly and approximations and limiting cases can be easily obtained.


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