Influences of Charged Dislocations on Performance of III-V Compound Semiconductor FinFETs

2013 ◽  
Vol 205-206 ◽  
pp. 429-434 ◽  
Author(s):  
Ji Hyun Hur ◽  
Myoung Jae Lee ◽  
Seong Ho Cho ◽  
Young Soo Park
Keyword(s):  
Relaxation Time ◽  
Dislocation Density ◽  
Edge Dislocation ◽  
Drain Current ◽  
Compound Semiconductor ◽  
Device Performance ◽  
Performance Parameters ◽  
Effective Mobility ◽  
Strict Condition ◽  
Momentum Relaxation

We present a model for charged dislocations effects on III-V compound semiconductor based FinFETs performance. The model is developed to obtain momentum relaxation time and, from it, key device performance parameters such as effective mobility, threshold voltage, and finally saturation drain current. We find out that charged threading edge dislocation density of a FinFET channel should be smaller than about 107cm-2to ignore the dislocation scattering impact on the device performance which is roughly one order more strict condition than previously known condition for wurtzite GaN.

Reduction of threading edge dislocation density in n-type GaN by Si delta-doping

2006 ◽  
Vol 286 (2) ◽  
pp. 255-258 ◽  
Author(s):  
Y.B. Pan ◽  
Z.J. Yang ◽  
Z.T. Chen ◽  
Y. Lu ◽  
T.J. Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Edge Dislocation ◽  
Delta Doping

scholarly journals Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 654
Author(s):  
Shouyi Wang ◽  
Qi Zhou ◽  
Kuangli Chen ◽  
Pengxiang Bai ◽  
Jinghai Wang ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Drain Current ◽  
Device Performance ◽  
Depletion Effect ◽  
Threshold Voltages ◽  
Gate Structure ◽  
Drain Side ◽  
Effective Reduction ◽  
Field Peak ◽  
Thin Barrier

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (VTH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assisted by the p-GaN gate part, the VTH of HG-UTB HEMTs can be significantly increased. By tailoring the hole concentration of the p-GaN gate, the VTH can be flexibly modulated from 1.63 V to 3.84 V. Moreover, the MIS-gate part enables the effective reduction in the electric field (E-field) peak at the drain-side edge of the p-GaN gate, which reduces the potential gate degradation originating from the high E-field in the p-GaN gate. Meanwhile, the HG-UTB HEMTs exhibit a maximum drain current as high as 701 mA/mm and correspond to an on-resistance of 10.1 Ω mm and a breakdown voltage of 610 V. The proposed HG-UTB HEMTs are a potential means to achieve normally off GaN HEMTs with a promising device performance and featuring a flexible VTH modulation range, which is of great interest for versatile power applications.

Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes

2010 ◽  
Vol 247 (7) ◽  
pp. 1710-1712 ◽  
Author(s):  
Richard Gutt ◽  
Lutz Kirste ◽  
Thorsten Passow ◽  
Michael Kunzer ◽  
Klaus Köhler ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Edge Dislocation ◽  
Light Emitting Diodes ◽  
Light Emitting

Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films

2013 ◽  
Vol 854 ◽  
pp. 29-34 ◽  
Author(s):  
Dmitry Osintsev ◽  
V. Sverdlov ◽  
Siegfried Selberherr
Keyword(s):  
Surface Roughness ◽  
Relaxation Time ◽  
Spin Relaxation ◽  
Momentum Space ◽  
Acoustic Phonon ◽  
Soi Mosfet ◽  
Momentum Relaxation ◽  
Strained Films ◽  
The Impact ◽  
Strong Spin

We consider the impact of the surface roughness and phonon induced relaxation on transport and spin characteristics in ultra-thin SOI MOSFET devices. We show that the regions in the momentum space, which are responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentum relaxation time determining the electron mobility can only be increased by a factor of two.

Characterization of edge dislocation density through X-ray diffraction rocking curves

2020 ◽  
Vol 551 ◽  
pp. 125893
Author(s):  
Yangfeng Li ◽  
Shen Yan ◽  
Xiaotao Hu ◽  
Yimeng Song ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Edge Dislocation ◽  
X Ray Diffraction ◽  
X Ray

Reduction of Dislocations in the Bulk Growth of SiC Crystals

2006 ◽  
Vol 527-529 ◽  
pp. 3-8 ◽  
Author(s):  
Daisuke Nakamura
Keyword(s):  
Dislocation Density ◽  
Growth Process ◽  
Large Diameter ◽  
Device Performance ◽  
Etch Pit Density ◽  
Bulk Growth ◽  
Etch Pit ◽  
Low Dislocation Density ◽  
The Impact

Recent reports on the impact of elementary dislocations on device performance and reliability suggest not only micropipe defects but also dislocations should be reduced or eliminated perfectly. This paper presents bulk growth process for reduction of the dislocations, and quality of the crystals grown by the process. Etch pit density of the best crystals grown by the process was lower by three orders of magnitude than that of conventional crystals. Moreover, large diameter crystals (>2”) with low dislocation density were successfully grown by the process.

Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 1197-1200
Author(s):  
Masato Hori ◽  
Yuki Asai ◽  
Masashi Yoneoka ◽  
Isao Tsunoda ◽  
Kenichiro Takakura ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Electron Mobility ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Enhancement Effect ◽  
Device Performance ◽  
Irradiation Effects ◽  
Radiation Induced ◽  
Improve Device

To solve the problem of the limitation to improve device performance in standard Si integration technologies and to develop radiation-harsh devices, the irradiation effects of Si1-xCx source/drain (S/D) n-type metal oxide semiconductor field effect transistors (n-MOSFETs) have been investigated. It is shown that the drain current and the maximum electron mobility of Si1-xCx n-MOSFETs decrease by electron irradiation. The reduction of the device performance can be explained by the radiation-induced lattice defects in the devices. However, the electron mobility enhancement effect by adding C remained after an electron irradiation up to 5×1017 e/cm2.

Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

1999 ◽  
Vol 572 ◽  
Author(s):  
Won Sang Lee ◽  
Yoon Ho Choi ◽  
Ki Woong Chung ◽  
Moo Whan Shin ◽  
Dong Chan Moon
Keyword(s):  
Electrochemical Etching ◽  
Etching Rate ◽  
Drain Current ◽  
Etching Process ◽  
Device Performance ◽  
High Activation ◽  
Band Bending ◽  
Photoelectrochemical Etching ◽  
Characteristic Frequencies ◽  
Recessed Gate

ABSTRACTA new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 Å/min under the Hg illumination of 35 mW/cm/2. The MESFET saturates at VDS = 4 V and pinches off at VGS = −3 V. The maximum drain current of the device is 230 mA/mmn at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

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