The effect of incident laser energy on pulsed laser deposition of HgCdTe films

2009 ◽  
Vol 311 (4) ◽  
pp. 1087-1090 ◽  
Author(s):  
Mei Liu ◽  
Baoyuan Man ◽  
Xingchao Lin ◽  
Xiangyang Li
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Incident Laser ◽  
Incident Laser Energy

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Investigation of AuNi5 Films Deposited by Pulsed Laser Deposition for RF MEMS Switch Contacts

2006 ◽  
Vol 980 ◽  
Author(s):  
Noha Farghal ◽  
Moustafa Yehia Ghannam ◽  
Amr M. Shaarawi ◽  
Hussein El Samman ◽  
Philippe Soussan ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Rf Mems ◽  
Laser Energy ◽  
Nickel Content ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dominant Factor ◽  
Wide Range ◽  
Lift Off

AbstractIn this work, the material properties of AuNi5 films prepared by Pulsed Laser Deposition (PLD) to be used as contact materials in RF MEMS switches are investigated. PLD is used because it provides good wide range thickness control (few nanometers to tens of microns) while preserving ablation target stoichiometry. Films with thickness in the range 50 - 450 nm were deposited at Laser energy density (fluence) in the range 0.55 - 1.38 J.cm-2 on silicon substrates at room temperature. An aperture was placed between the plume and the substrate to filter out large particulates. The presence of the aperture reduced surface roughness from 8.5 nm to 4.3 nm as determined by optical profilometry. In addition, the presence of the aperture during deposition has been found to affect film stoichiometry. The latter was evaluated using X-ray Fluorescence and the Nickel content has been found to vary in the range 1.1 - 9.5%. Only films deposited with the aperture removed maintain target stoichiometry (5.2% Ni). Hence, it is believed that the presence of the aperture causes non-congruent transfer. The Nickel content within the range under investigation has practically no effect on film morphology or hardness. Laser fluence, however, has been found to be the dominant factor determining film properties. Finally, 100 µm wide AuNi5 strips 290 nm and 130 nm thick deposited at room temperature have been successfully formed on silicon wafers by lift-off photolithography.

Effect of energy, temperature, and Cu-doped coatings on crystallinity of Hydroxyapatite thin films obtained by pulsed laser deposition

2021 ◽  
Author(s):  
Nooshin Kashi ◽  
Mahdi Momeni ◽  
Habib Hamidinezhad
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
High Surface ◽  
Pulsed Laser ◽  
Xrd Analysis ◽  
Laser Deposition ◽  
Laser Source ◽  
X Ray Diffraction ◽  
Crystalline Films ◽  
Steel Substrates

In this work, a pulsed laser deposition (PLD) technique with an Nd:YAG laser source was used to produce pure Hydroxyapatite (HA) and Cu-substituted HA (Cu-HA) coatings on stainless steel substrates in vacuum at room temperature. It is observed that the combined effects of percentages of Cu dopants and laser energy as well as annealing temperature significantly modify the crystallinity of the films. The morphology and structural properties of the deposited HA films were analyzed by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and Raman spectroscopy. FESEM images displayed various shapes of nanoparticles with high-surface density throughout the area of the substrate and with typical sizes around 26–208 nm. XRD analysis confirmed that post-deposition annealing is essential to achieve the desired crystallinity and uniformity of coatings. The Raman spectrum of HA has peaks at 958.22, 437.48, and 587.05 cm[Formula: see text] attributed to the [Formula: see text] PO[Formula: see text], [Formula: see text] PO[Formula: see text], and [Formula: see text] PO[Formula: see text], respectively. The synthesized HA and Cu-HA crystalline films are nanostructures with dense and compact microstructures. Finally, irregular surface and crystalline structure of fabricated films lead to the extension of the surface and enhance the cell’s proliferation in medical uses and biomedical applications.

Growth and Characterization of Titanium Nitride Nanowires on Silicon Substrate Using Pulsed Laser Deposition Method for Biological Applications

2013 ◽  
Author(s):  
Seyram Gbordzoe ◽  
K. Mensah-Darkwa ◽  
Ram Gupta ◽  
Dhananjay Kumar
Keyword(s):  
Titanium Nitride ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Laser Deposition ◽  
Sem Images ◽  
Crystal Silicon

The present work reports on the growth and characterization of titanium nitride (TiN) nanowires on silicon substrate using a pulsed laser deposition (PLD) method. The TiN nanowires were grown on single crystal silicon substrate with (100) and (111) orientations at a range of substrate temperatures and under both nitrogen ambient and vacuum. The different orientation of silicon was chosen to see the effect of the substrate orientation on the growth of TiN nanowires. The laser energy entering the vacuum chamber to impinge the TiN target for nanowire deposition was varied from 70 to 80 mJ. The TiN nanowires samples were characterized using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). The diameter of the nanowires was observed to increase from 25 nm to 40 nm with an increase in laser beam energy entering the chamber. The shape and orientation of the nanowires was observed to be the same for (100) and (111) oriented silicon substrates as observed in SEM images. Corrosion tests were also conducted on the TiN nanowires.

scholarly journals Toward the Growth of Self-Catalyzed ZnO Nanowires Perpendicular to the Surface of Silicon and Glass Substrates, by Pulsed Laser Deposition

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4427
Author(s):  
Basma ElZein ◽  
Yingbang Yao ◽  
Ahmad S. Barham ◽  
Elhadj Dogheche ◽  
Ghassan E. Jabbour
Keyword(s):  
Pulsed Laser Deposition ◽  
Seed Layer ◽  
Laser Energy ◽  
Lattice Structure ◽  
Pulsed Laser ◽  
Zno Nanowires ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Glass Substrates ◽  
Comb Structure

Vertically-oriented zinc oxide (ZnO) nanowires were synthesized on glass and silicon substrates by Pulsed Laser Deposition and without the use of a catalyst. An intermediate c-axis oriented nanotextured ZnO seed layer in the form of nanowall network with honey comb structure allows the growth of high quality, self-forming, and vertically-oriented nanowires at relatively low temperature (<400 °C) and under argon atmosphere at high pressure (>5 Torr). Many parameters were shown to affect the growth of the ZnO nanowires such as gas pressure, substrate–target distance, and laser energy. Growth of a c-axis-crystalline array of nanowires growing vertically from the energetically favorable sites on the seed layer is observed. Nucleation occurs due to the matching lattice structure and the polar nature of the ZnO seed layer. Morphological, structural, and optical properties were investigated. X-ray diffraction (XRD) revealed highly c-axis aligned nanowires along the (002) crystal plane. Room temperature photoluminescence (PL) measurements showed a strong and narrow bandwidth of Ultraviolet (UV) emission, which shifts to lower wavelength with the increase of pressure.

Laser Energy Dependent Structure of Pulsed Laser Deposited Barium Dititanate Films

2009 ◽  
Vol 66 ◽  
pp. 183-186
Author(s):  
L. Li ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Energy Density ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Preferred Orientation ◽  
Laser Deposition ◽  
Laser Energy Density ◽  
Energy Dependent ◽  
Deposited Films

Barium dititanate (BaTi2O5) films were prepared on MgO (100) substrate by pulsed laser deposition under various laser energy densities. The effect of laser energy on crystallinity, orientation and surface morphology was investigated. The preferred orientation of the as-deposited films changes from (710) to (020) with decreasing laser energy, and the surface morphology is different depending on laser energy too. The b-axis oriented BaTi2O5 film could be obtained at the laser energy density of 2J/cm2, where the film shows a dense surface with an elongated granular texture.

X-Ray Diffraction Study of Clusters in a-tC Films

1994 ◽  
Vol 358 ◽  
Author(s):  
L. J. Martínez-Miranda ◽  
T. A. Friedmann ◽  
J. P. Sullivan ◽  
M. P. Siegal ◽  
T. W. Mercer ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Diffraction Study ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Basic Unit ◽  
Unit Size ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTWe performed an X-ray diffraction study of amorphous-tetrahedrally-coordinated carbon (a-tC) films prepared by pulsed laser deposition (PLD). The samples' properties were analyzed as a function of laser energy and thickness. For all thicknesses and laser energies, films were made up of clusters with a basic unit size of 7 -11 nm. Thicker films, as well as films prepared at higher laser densities exhibit larger clusters, in the tens of nanometers. The clusters are not readily observable by AFM, which may indicate the presence of a flat (graphitized) top film surface.

Characteristics of Laser-Ablated Plasma and Properties Of Diamond-Like Carbon Film In Pulsed Laser Deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Yukihiko Yamagata ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Raj K. Thareja ◽  
Kenji Ebihara ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Carbon Film ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Ccd Camera ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Diamond Like Carbon Film ◽  
Swan Band

AbstractCharacteristics of laser-ablated carbon plasma and properties of diamond-like carbon film in KrF pulsed laser deposition were investigated using laser-induced fluorescence (LIF) and optical emission spectroscopy. Two-dimensional LIF images of C2 (Swan band, d3Φg – a3Φu) and C3 (Comet Head System, A1Φu –X1Σg+) molecules were detected as a function of laser energy density by narrow band pass filters and an intensified CCD camera. C2 LIF intensity is found to be weaker in the central part of the plume than that at the periphery at incident energy greater than 6 J/cm2. It is conjectured that C2 molecules are dissociated by collision with energetic species in the central part of the ablation plume, and degrade the diamond-like property of deposited films.

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