Effect of electron beam irradiation on phytochemical composition, lipase activity and fatty acid of quinoa

2021 ◽  
Vol 98 ◽  
pp. 103161
Author(s):  
Xiaohu Luo ◽  
Zhihong Du ◽  
Kai Yang ◽  
Jing Wang ◽  
Jing Zhou ◽  
...  
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Lipase Activity ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Phytochemical Composition

Impact of Electron Beam Irradiation on Fatty Acid Profile of Canavalia Seeds

2010 ◽  
Vol 5 (3) ◽  
pp. 1049-1060 ◽  
Author(s):  
Prabhavathi Supriya ◽  
Kandikere R. Sridhar ◽  
Soora Nareshkumar ◽  
Sanjeev Ganesh
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Fatty Acid Profile ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

scholarly journals Effect of Electron-Beam Irradiation on the Growth Profile and Fatty Acid Composition of Botryococcus sp.

2018 ◽  
Vol 10 (2) ◽  
pp. 388-395
Author(s):  
Windra Yuniarsih ◽  
Heli Siti Halimatul ◽  
Asri Peni Wulandari
Keyword(s):  
Fatty Acids ◽  
Fatty Acid Composition ◽  
Electron Beam ◽  
Fatty Acid ◽  
Acid Composition ◽  
Electron Beam Irradiation ◽  
Strain Improvement ◽  
High Energy ◽  
Beam Irradiation ◽  
Growth Profile

Botryococcus sp. is an economically important microalgae as it contains carbohydrates, lipids, proteins, and a number of phytochemicals. The high concentrations of saturated fatty acids (SFAs) and monounsaturated fatty acids (MUFAs) in this strain also a valuable source for production of biofuel. Mutagenic engineering using irradiation has been known to increase the content of these biomass. The aim of this study is to know the effect of electron-beam irradiation to the growth profile and fatty acid composition of Botryococcus sp. In this study, Botryococcus sp. adjusted an optical density 1.0 after being exposed to different doses of electron-beam irradiation (160 kGy, 240 kGy, and 320 kGy) and induced random mutagenesis for strain improvement was observed based on high energy (1.5 MeV and 2 mA). Several mutants obtained were designated as strain B160, B240, and B320, respectively. The profile growth was significantly different between control (0 kGy) and irradiated microalgae strain. The highest growth is found in B320 mutant. Fatty acid of Botryococcus sp. control produced 7 fatty acids, B160 produced 7 fatty acids, B240 produced 6 fatty acids, whereas B320 produced 9 fatty acids. B320 produced hydrocarbon and phtalic acid as well as fatty acids. Total SFAs and MUFAs of B240 was increased 1.6 times compared to the wild type. The results would give some implications to improve the quality of biodiesel from Botryococcus sp.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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