Proton-Beam Engineered Surface-Point Defects for Highly Sensitive and Reliable NO2 Sensing under Humid Environments

2021 ◽  
pp. 125841
Author(s):  
Jae Hoon Bang ◽  
Yong Jung Kwon ◽  
Jung-Hoon Lee ◽  
Ali Mirzaei ◽  
Ha Young Lee ◽  
...  
Keyword(s):  
Proton Beam ◽  
Point Defects ◽  
Surface Point ◽  
Highly Sensitive

Atomic Bonding at Oxide Surfaces

1994 ◽  
Vol 357 ◽  
Author(s):  
Victor E. Henrich
Keyword(s):  
Point Defects ◽  
Surface Defects ◽  
Oxide Surfaces ◽  
Surface Point ◽  
Acid Base ◽  
Metal Oxide Surfaces ◽  
Oxidation Reduction ◽  
Defect Sites ◽  
Metal Ceramic ◽  
Ceramic Interfaces

AbstractThe fundamental interactions involved in the bonding of atoms and molecules to metal oxides are discussed. Surface defects play a major role in many of those interactions. Both acid/base and oxidation/reduction reactions occur at metal-oxide surfaces, with the latter dominating at point defect sites. The reaction of metals with oxide surfaces is governed largely by the relative heats of formation of the respective oxides, although surface point defects also play an important role. Preliminary studies of ceramic/ceramic interfaces indicate that interfacial interactions are much weaker than for metal/ceramic interfaces.

STRUCTURAL AND ELECTRONIC PROPERTIES OF c-BN(110) SURFACE AND SURFACE POINT DEFECTS

2006 ◽  
Vol 17 (06) ◽  
pp. 795-803 ◽  
Author(s):  
HATICE KÖKTEN ◽  
ŞAKIR ERKOÇ
Keyword(s):  
Point Defects ◽  
Cubic Boron Nitride ◽  
Vacancy Formation ◽  
Surface Point ◽  
Hartree Fock ◽  
Structural And Electronic Properties ◽  
Structure Surface ◽  
Surface Vacancy ◽  
First Time ◽  
Formation Energies

The surface structure, surface energy, and surface vacancy formation energy for B and N vacancy of the cubic boron nitride (c-BN)(110) surface have been investigated by performing Hartree-Fock and DFT calculations. Results are compared with available literature values. The vacancy formation energies [unrelaxed [Formula: see text] and relaxed (Ef)] are reported for the first time for c-BN(110).

scholarly journals Subsurface diffusion in crystals and effect of surface permeability on the atomic step motion

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Sergey Kosolobov
Keyword(s):  
Point Defects ◽  
Atomic Step ◽  
Surface Point ◽  
Atomic Steps ◽  
Sources And Sinks ◽  
Step Rate ◽  
Step Motion ◽  
Surface Permeability ◽  
Diffusive Layer ◽  
Effect Of Surface

Abstract A new theoretical approach to characterize the diffusion of both surface and bulk point defects in crystals is presented. In our model, atomic steps are considered as sources and sinks not only for adatoms and advacancies but also for self-interstitials and bulk vacancies, providing a new mechanism for bulk point defect generation and annihilation. It is shown that the creation and annihilation of self-interstitials and vacancies occur at atomic steps and can be described by introducing a diffusive layer of the bulk point defects adsorbed just below the surface. The atomic step rate of advance is studied taking into account finite permeability of the surface for bulk and surface point defects. The surface permeability results in the appearance of the dependence of the total step rate of advance not only on the supersaturation in vapor phase but also on the supersaturation of point defects in the bulk.

Computer simulation of surface-point defects interaction in hcp metals

2001 ◽  
Vol 167 (1-2) ◽  
pp. 165-170 ◽  
Author(s):  
M.I. Pascuet ◽  
R.C. Pasianot ◽  
A.M. Monti
Keyword(s):  
Computer Simulation ◽  
Point Defects ◽  
Surface Point

A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation

2010 ◽  
Vol 645-648 ◽  
pp. 431-434 ◽  
Author(s):  
Lars S. Løvlie ◽  
Lasse Vines ◽  
Bengt Gunnar Svensson
Keyword(s):  
Proton Beam ◽  
Point Defects ◽  
Defect Formation ◽  
Low Energy ◽  
Intrinsic Defect ◽  
Beam Irradiation ◽  
Vertical Diffusion ◽  
Proton Beam Irradiation ◽  
Defect Diffusion ◽  
Mobile Species

4H-SiC has been irradiated with 10 keV protons and a laterally resolved DLTS study performed to study the diffusion of irradiation induced intrinsic point defects. It is found that the defects migrate on the order of hundreds of μm laterally and carbon interstitials (CI) are believed to be involved in the defect formation. However, the vertical diffusion lengths are revealed to be several orders of magnitude shorter, on the order of hundreds of nm. Specifically, the Z1,2, S1,2 and EH6,7 levels are found to be generated significant distances from the irradiated area, suggesting that CI or another highly mobile species are involved in the formation of these defects.

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