Preparation and characterization of pure SiC ceramics by high temperature physical vapor transport induced by seeding with nano SiC particles

Abstract In this paper, boron-doped dense 6H-SiC ceramics was fabricated by the high-temperature physical vapor transport (HTPVT) method. The effect of B doping on the crystal structure stability of 6H-SiC was investigated based on density functional theory (DFT). The results show that B doping can be realized even under thermodynamical equilibrium conditions. Nevertheless, it is found that the B doping effects on the (0001) of Si-plane and (000-1) of C-plane are significantly different. The doping experiments demonstrated that B can observably change the crystal growth morphology, leading to the formation of elongated 6H-SiC crystals.

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High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

Functional Materials Letters ◽

10.1142/s1793604719500322 ◽

2019 ◽

Vol 12 (03) ◽

pp. 1950032 ◽

Cited By ~ 2

Author(s):

Yuchen Deng ◽

Yaming Zhang ◽

Nanlong Zhang ◽

Qiang Zhi ◽

Bo Wang ◽

...

Keyword(s):

Thermal Conductivity ◽

Silicon Carbide ◽

Grain Size ◽

Phase Composition ◽

Room Temperature ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Growth Substrate ◽

Sic Ceramics ◽

Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

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Electrical characterization of 6H-SiC grown by physical vapor transport method

Materials Science and Engineering B ◽

10.1016/j.mseb.2008.11.020 ◽

2009 ◽

Vol 165 (1-2) ◽

pp. 23-27 ◽

Cited By ~ 1

Author(s):

G. Zaremba ◽

M. Kaniewska ◽

W. Jung ◽

M. Guziewicz ◽

K. Grasza

Keyword(s):

Electrical Characterization ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Transport Method ◽

Vapor Transport Method

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Characterization of Semi-insulating SiC

MRS Proceedings ◽

10.1557/proc-0911-b06-03 ◽

2006 ◽

Vol 911 ◽

Cited By ~ 3

Author(s):

Nguyen Tien Son ◽

Patrick Carlsson ◽

Björn Magnusson ◽

Erik Janzén

Keyword(s):

Vapor Deposition ◽

Thermal Activation ◽

Deep Level ◽

Chemical Vapor ◽

Activation Energies ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Paramagnetic Resonance ◽

Electron Paramagnetic

AbstractElectron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

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Structural Characterization of CF-PVT Grown Bulk 3C-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.67 ◽

2008 ◽

Vol 600-603 ◽

pp. 67-70 ◽

Cited By ~ 1

Author(s):

Alkyoni Mantzari ◽

Frédéric Mercier ◽

Maher Soueidan ◽

Didier Chaussende ◽

Gabriel Ferro ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Structural Properties ◽

Structural Characterization ◽

Stacking Faults ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Transmission Electron ◽

Continuous Feed

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

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Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.15 ◽

2018 ◽

Vol 924 ◽

pp. 15-18

Author(s):

Masashi Sonoda ◽

Kentaro Shioura ◽

Takahiro Nakano ◽

Noboru Ohtani ◽

Masakazu Katsuno ◽

...

Keyword(s):

High Resolution ◽

Surface Morphology ◽

Defect Structure ◽

Growth Front ◽

Vapor Transport ◽

Physical Vapor Transport ◽

X Ray Diffraction ◽

X Ray ◽

Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

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