Characterization of semi-insulating CdTe crystals grown by horizontal seeded physical vapor transport

AbstractElectron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

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Structural Characterization of CF-PVT Grown Bulk 3C-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.67 ◽

2008 ◽

Vol 600-603 ◽

pp. 67-70 ◽

Cited By ~ 1

Author(s):

Alkyoni Mantzari ◽

Frédéric Mercier ◽

Maher Soueidan ◽

Didier Chaussende ◽

Gabriel Ferro ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Structural Properties ◽

Structural Characterization ◽

Stacking Faults ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Transmission Electron ◽

Continuous Feed

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

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Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.15 ◽

2018 ◽

Vol 924 ◽

pp. 15-18

Author(s):

Masashi Sonoda ◽

Kentaro Shioura ◽

Takahiro Nakano ◽

Noboru Ohtani ◽

Masakazu Katsuno ◽

...

Keyword(s):

High Resolution ◽

Surface Morphology ◽

Defect Structure ◽

Growth Front ◽

Vapor Transport ◽

Physical Vapor Transport ◽

X Ray Diffraction ◽

X Ray ◽

Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

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Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method

physica status solidi (a) ◽

10.1002/pssa.201970052 ◽

2019 ◽

Vol 216 (16) ◽

pp. 1970052 ◽

Cited By ~ 3

Author(s):

Qikun Wang ◽

Dan Lei ◽

Guangdong He ◽

Jianchao Gong ◽

Jiali Huang ◽

...

Keyword(s):

Single Crystal ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Transport Method ◽

Vapor Transport Method

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Morphological characterization of pentacene single crystals grown by physical vapor transport

Applied Surface Science ◽

10.1016/j.apsusc.2006.07.068 ◽

2007 ◽

Vol 253 (7) ◽

pp. 3581-3585 ◽

Cited By ~ 11

Author(s):

Xionghui Zeng ◽

Yong Qiu ◽

Juan Qiao ◽

Guifang Dong ◽

Liduo Wang

Keyword(s):

Single Crystals ◽

Morphological Characterization ◽

Vapor Transport ◽

Physical Vapor Transport

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Sublimation Growth and Defect Characterization of AlN Single Crystals

MRS Proceedings ◽

10.1557/proc-1040-q03-01 ◽

2007 ◽

Vol 1040 ◽

Author(s):

Shaoping Wang ◽

Balaji Raghothamachar ◽

Michael Dudley ◽

Zaiyuan Ren ◽

Jung Han ◽

...

Keyword(s):

Single Crystal ◽

Single Crystal Growth ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Defect Characterization ◽

Growth Technique ◽

X Ray ◽

Sublimation Growth ◽

Growth Experiments

AbstractIn this paper, we report results from AlN single crystal growth experiments using a sublimation physical vapor transport growth technique. AlN single crystal boules up to 7mm in diameter were demonstrated. Characterization of polished AlN single crystal samples was carried out using various techniques, including synchrotron X-ray topography.

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Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2018.07.029 ◽

2018 ◽

Vol 499 ◽

pp. 24-29 ◽

Cited By ~ 2

Author(s):

Masashi Sonoda ◽

Takahiro Nakano ◽

Kentaro Shioura ◽

Naoto Shinagawa ◽

Noboru Ohtani

Keyword(s):

Structural Characterization ◽

Growth Front ◽

Vapor Transport ◽

Physical Vapor Transport ◽

X Ray

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Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2019.03.015 ◽

2019 ◽

Vol 515 ◽

pp. 58-65 ◽

Cited By ~ 1

Author(s):

Kentaro Shioura ◽

Naoto Shinagawa ◽

Takuto Izawa ◽

Noboru Ohtani

Keyword(s):

Structural Characterization ◽

Grown Crystal ◽

Raman Microscopy ◽

Vapor Transport ◽

Physical Vapor Transport ◽

X Ray ◽

Crystal Seed

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Hrtem Characterization of 6H-15R Polytype Boundaries in Silicon Carbide Grown by Physical Vapor Transport

MRS Proceedings ◽

10.1557/proc-442-655 ◽

1996 ◽

Vol 442 ◽

Author(s):

E. K. Sanchez ◽

M. De Graef ◽

W. Qian ◽

M. Skowronski

Keyword(s):

Electron Microscopy ◽

Silicon Carbide ◽

Cross Section ◽

Stacking Faults ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Stacking Sequence ◽

Fault Density ◽

Transmission Electron

AbstractThe interface between 6H and 15R polytypes of silicon carbide, grown by Physical Vapor Transport, was studied by high-resolution transmission electron microscopy. The sample was investigated in cross-section cut perpendicular to the [11.0] irection. The atomic stacking sequence at the interface of the polytypes was determined. Polytype boundaries with orientations parallel and perpendicular to the 6H c-axis were investigated. Stacking faults associated with low angle grain boundaries in both 6H and 15R regions were observed and the 15R regions systematically showed a higher fault density than the 6H regions.

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