Kinetics of silicon film growth and the deposition phase diagram

2004 ◽  
Vol 338-340 ◽  
pp. 13-18 ◽  
Author(s):  
G.M. Ferreira ◽  
A.S. Ferlauto ◽  
Chi Chen ◽  
R.J. Koval ◽  
J.M. Pearce ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Film Growth ◽  
Silicon Film ◽  
Kinetics Of

Study of the Amorphous-to-Microcrystalline Transition during Silicon Film Growth at Increased Rates: Extensions of the Evolutionary Phase Diagram

2000 ◽  
Vol 609 ◽  
Author(s):  
Andre S. Ferlauto ◽  
Pablo I. Rovira ◽  
Randy J. Koval ◽  
Christopher R. Wronski ◽  
Robert W. Collins
Keyword(s):  
Phase Diagram ◽  
Layer Thickness ◽  
Film Growth ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Phase Evolution ◽  
Rf Plasma ◽  
Force Microscopy ◽  
Hydrogen Dilution ◽  
Evolutionary Phase

ABSTRACTThe microstructural and phase evolution of silicon films (Si:H) prepared by low temperature (200°C) rf plasma-enhanced chemical vapor deposition (PECVD) with hydrogen dilution of silane has been studied using real time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM). Both RTSE and AFM support the concept of an evolutionary phase diagram that describes different regimes of bulk layer thickness and H2-dilution ratio R within which predominantly amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) films are obtained. In this study, the evolutionary phase diagram has been extended to identify four separate growth regimes: (i) a-Si:H with a smooth surface and a stable roughness layer thickness, (ii) a-Si:H with a rougher surface and an unstable roughness layer thickness, (iii) mixed-phase (a+μc)-Si:H, and (iv) fully-coalesced (single-phase) μc-Si:H. Based on this framework, the effect of increased rf power to achieve higher deposition rates in the rf PECVD process was investigated.

Initial stage of semiinsulating polycrystalline silicon film growth

2008 ◽  
Vol 37 (6) ◽  
pp. 349-355
Author(s):  
A. S. Turtsevich ◽  
O. Yu. Nalivaiko ◽  
V. A. Solodukha ◽  
V. V. Glukhmanchuk ◽  
N. G. Tsirkunova ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Film Growth ◽  
Silicon Film ◽  
Initial Stage ◽  
Polycrystalline Silicon Film

In-Situ Studies of Epitaxial Thin-Film Growth

1964 ◽  
Vol 19 (7-8) ◽  
pp. 835-843 ◽  
Author(s):  
H. Poppa
Keyword(s):  
Film Growth ◽  
High Resolution Electron Microscopy ◽  
Thin Film Growth ◽  
Continuous Observation ◽  
Epitaxial Thin Film ◽  
Epitaxial Thin Film Growth ◽  
Resolution Electron ◽  
Substrate Surfaces ◽  
Kinetics Of

Early stages of oriented overgrowth of Ag, Au, and Pd on thin, single-crystal substrates of mica, molybdenite, Au and Pd were studied by high-resolution electron microscopy and diffraction. Cleaning of substrate surfaces and deposition of evaporated materials were conducted inside an electron microscope. High-magnification, continuous observation during growth permitted investigation of the kinetics of growth. A number of probably elementary epitaxial processes were studied in detail. Nucleation and growth behavior was examined for different supersaturations and free surface energies of substrate and overgrowth materials. The influence of alloying on growth and the spacing of parallel moiré structures was investigated.

KINETICS OF THIN OXIDE FILM GROWTH ON METAL CRYSTALS

2000 ◽  
Vol 07 (01n02) ◽  
pp. 135-139 ◽  
Author(s):  
V. P. ZHDANOV ◽  
P. R. NORTON
Keyword(s):  
Oxide Film ◽  
Metal Oxide ◽  
Metal Ions ◽  
Film Growth ◽  
Phase Interface ◽  
Oxide Interface ◽  
Thin Oxide Film ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Kinetics Of

A seminal model describing the kinetics of growth of thin oxide films on metal crystals was proposed by Cabrera and Mott (CM). The model is based on the assumption that the growth is limited by the field-facilitated activated jumps of metal ions located in steps on the metal–oxide interface. We generalize the CM model by (i) exploring the interplay of jumps of metal ions from the step and terrace sites at the metal–oxide interface, and (ii) scrutinizing the processes at the oxide–gas-phase interface. The former factor is found to change the physical meaning of the parameters in the CM growth law. The latter factor results in modification of the growth law. In particular, the oxidation kinetics becomes dependent on the O2 pressure. More specifically, the oxidation rate is predicted to increase with increasing pressure. This effect is, however, rather weak and becomes progressively weaker with increasing oxide film thickness.

Kinetics of Ge-Se-In Film Growth

2010 ◽  
Author(s):  
A. Stoilova ◽  
P. Petkov ◽  
Y. Nedeva ◽  
B. Monchev ◽  
Angelos Angelopoulos ◽  
...  
Keyword(s):  
Film Growth ◽  
Kinetics Of

scholarly journals Cross-Coupling Polymerization at Iodophenyl Thin Films Prepared by Spontaneous Grafting of a Diazonium Salt

2020 ◽  
Author(s):  
Nicholas Marshall ◽  
Andres Rodriguez
Keyword(s):  
Thin Films ◽  
Polymer Film ◽  
Film Growth ◽  
Diazonium Salt ◽  
Cross Coupling ◽  
Chain Termination ◽  
Kinetics Of ◽  
Coupling Polymerization

Development of a method for the surface-initiated Kumada cross-coupling polymerization based on 4-iodophenyldiazonium salt thin films. Studies of the kinetics of chain termination and polymer film growth, and use of this method to make polythiophene brushes.<br>

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