Room temperature electron tunneling and storage in a nanocrystalline silicon floating gate structure

We report the results of electron tunneling and Coulomb blockade in nanocrystalline silicon ( nc - Si ) double-barrier floating-gate structure ( SiO 2/ nc - Si/SiO 2) fabricated in situ in a plasma-enhanced chemical-vapor-deposition (PECVD) system for the nanoelectronic devices application. The quantum confinement and Coulomb blockade effect have been demonstrated in the capacitance–voltage (C–V) characteristics, in which unique peak structures differ remarkably from the normal smooth C–V curves. The experimental results have been explained by band diagram and equivalent circuits. By contrasted with silicon single electron transistor memory made by using ultra fancy nanotechnology, nc - Si -based memory can be fabricated with a minimum perturbation of conventional silicon technology and may be closest to industrial application.

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Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application

MRS Proceedings ◽

10.1557/opl.2013.272 ◽

2013 ◽

Vol 1510 ◽

Author(s):

Seiichi Miyazaki

Keyword(s):

Room Temperature ◽

Drain Current ◽

Electron Injection ◽

Floating Gate ◽

Back Side ◽

Mos Capacitors ◽

Optoelectronic Application ◽

And Storage ◽

Si Quantum Dots

ABSTRACTWe have fabricated a hybrid nanodots floating gate (FG) in which Si quantum dots (QDs) and silicide nanodots (NDs) are stacked with a very thin SiO2 interlayer in order to satisfy both multiple valued capability and charge storage capacity for a sufficient memory window and to open up novel functionality for optoelectronic application. In electron charging and discharging characteristics measured with application of pulsed gate biases to MOS capacitors with a hybrid NDs FG, stepwise changes in the rates for electron injection and emission were revealed with increasing pulse width at room temperature. Also, nMOSFETs with a hybrid NDs FG show unique hysteresis with stepwise changes in the drain current - gate voltage characteristics. The observed characteristics can be interpreted in terms that the electron injection and storage into silicide-NDs proceed through the discrete charged states of Si-QDs. For MOS capacitors with a triple-stacked hybrid NDs FG fabricated by adding another Si-QDs, by subgap light irradiation from the back side of the Si substrate, a distinct infrared optical response in C-V characteristics was detected at room temperature. The result is attributable to the shift of charge centroid in the hybrid NDs FG as a result of transfer of photoexcited electrons from silicide NDs to Si-QDs.

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A Memory Device Utilizing Resonant Tunneling in Nanocrystalline Silicon Superlattices

MRS Proceedings ◽

10.1557/proc-638-f2.3.1 ◽

2000 ◽

Vol 638 ◽

Author(s):

Laurent Montès ◽

Galina F. Grom ◽

Rishi Krishnan ◽

Philippe M. Fauchet ◽

Leonid Tsybeskov ◽

...

Keyword(s):

Resonant Tunneling ◽

Room Temperature ◽

Electron Tunneling ◽

Silicon Layer ◽

Nanocrystalline Silicon ◽

Memory Device ◽

Hot Electron ◽

Non Volatile Memory ◽

Silicon Nanocrystallites ◽

Size Dispersion

AbstractA quantum structure based on Si/SiO2 and fabricated using standard Si technology has strong potential for applications in non-volatile and scaled dynamic memories. Among standard requirements, such as long retention time and endurance, a structure utilizing resonant tunneling offers lower bias operation and faster write/read cycle. In addition, degradation effects associated with Fowlher-Nordheim (FN) hot electron tunneling can be avoided. Superlattices of nanometer size layers of silicon and silicon dioxide were obtained by sputtering. The size of the silicon nanocrystallites (nc-Si) is fixed by the thickness of the silicon layer which limits the size dispersion. A detailed analysis of the storage of charges in the dots, as a function of the nanocrystals size, is investigated using capacitance methods. Constant voltage and constant capacitance techniques are used to monitor the discharge of the structure. Room temperature non-volatile memory with retention times as long as months is evidenced.

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Investigations on the Nature of Hemophilia A

Thrombosis and Haemostasis ◽

10.1055/s-0038-1654959 ◽

1963 ◽

Vol 09 (01) ◽

pp. 030-052 ◽

Cited By ~ 4

Author(s):

Eberhard Mammen

Keyword(s):

Factor Viii ◽

Human Plasma ◽

Barium Sulfate ◽

Freeze Drying ◽

Room Temperature ◽

Hemophilia A ◽

Normal Human Plasma ◽

Normal Human ◽

And Storage ◽

Prothrombin Activation

SummaryIn this paper an inhibitor is described that is found in hemophilic plasma and serum different from any till now described inhibitor. The inhibitor only inhibits prothrombin activation in the “intrinsic clotting systems”. This inhibitor is probably not present in normal human plasma or serum. It is destroyed by ether and freeze drying, is labile to acid and storage at room temperature. It is stable upon dialysis and has not been adsorbed on barium sulfate, aluminum hydroxide or kaolin. It precipitates at 50% v/v saturation with alcohol. The nature of this inhibitor seems to be a protein or lipoprotein.Factor VIII was isolated from hemophilic plasma. The amount isolated was the same as from normal plasma and the activity properties were not different. Hemophiliacs have normal amounts of factor VIII.

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Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

MRS Proceedings ◽

10.1557/proc-452-1019 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 1

Author(s):

N. H. Nickel ◽

E. A. Schiff

Keyword(s):

Electron Paramagnetic Resonance ◽

Polycrystalline Silicon ◽

Room Temperature ◽

Dangling Bond ◽

Temperature Dependent ◽

Paramagnetic Resonance ◽

Temperature Electron ◽

Motional Narrowing ◽

G Value ◽

Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

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Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering

Nature Photonics ◽

10.1038/s41566-021-00786-y ◽

2021 ◽

Author(s):

Yuqing Huang ◽

Ville Polojärvi ◽

Satoshi Hiura ◽

Pontus Höjer ◽

Arto Aho ◽

...

Keyword(s):

Spin Polarization ◽

Electron Spin ◽

Room Temperature ◽

Electron Spin Polarization ◽

Semiconductor Nanostructure ◽

Temperature Electron ◽

Spin Filtering

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Evaluation of Microbial Culture Techniques for the Isolation of Pythium Insidiosum from Equine Tissues

Journal of Veterinary Diagnostic Investigation ◽

10.1177/104063870201400403 ◽

2002 ◽

Vol 14 (4) ◽

pp. 288-294 ◽

Cited By ~ 28

Author(s):

Amy M. Grooters ◽

Amy Whittington ◽

Mae K. Lopez ◽

Michelle N. Boroughs ◽

Alma F. Roy

Keyword(s):

Room Temperature ◽

Microbial Culture ◽

Sample Type ◽

Pythium Insidiosum ◽

Selective Media ◽

Culture Techniques ◽

Media Type ◽

Antibiotic Solution ◽

And Storage ◽

Storage Technique

The purpose of this study was to evaluate the effects of sample handling, storage, and culture techniques on the isolation of Pythium insidiosum from infected equine tissues. Tissue and kunker samples obtained immediately posteuthanasia from a horse with subcutaneous pythiosis were used to assess the effects of sample type (kunkers vs. tissues), media type (selective vs. nonselective), storage technique, and storage time on P. insidiosum isolation rate. Overall, isolation rates were higher from fresh kunkers (94.6%) and stored kunkers (76.4%) than from fresh tissues (8.3%) or stored tissues (4.6%). Isolation of P. insidiosum also occurred more often on antibiotic-containing media than on nonselective media for both fresh and stored samples. For samples that were stored for 1–3 days prior to culture, P. insidiosum isolation rates were highest for the following techniques: kunkers stored at room temperature and plated on selective media (100%), kunkers stored at 4 C and then plated on either nonselective (91.7%) or selective (95.8%) media, kunkers stored on cold packs and then plated on either nonselective (93.8%) or selective (100%) media, kunkers stored in ampicillin solution and plated on selective media (100%), and kunkers stored in ampicillin/gentocin solution and plated on selective media (87.5%). For samples stored for 4–5 days, P. insidiosum isolation rates were highest for kunkers stored at 4 C and then plated on either nonselective (81.3%) or selective (87.5%) media, kunkers stored in ampicillin solution and then plated on selective media (87.5%), and kunkers stored in ampicillin/gentocin solution and plated on selective media (87.5%). Results of this study suggest that optimal isolation rates of P. insidiosum from infected equine tissues are achieved by culturing fresh kunkers on selective media. For samples that cannot be processed immediately, acceptable handling techniques include storage at room temperature for up to 3 days, refrigeration for up to 5 days, shipping on cold packs, and storage in antibiotic solution, each combined with subsequent inoculation on selective media.

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Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.154.95 ◽

2009 ◽

Vol 154 ◽

pp. 95-100 ◽

Cited By ~ 13

Author(s):

Seiichi Miyazaki ◽

Mitsuhisa Ikeda ◽

Katsunori Makihara ◽

K. Shimanoe ◽

R. Matsumoto

Keyword(s):

Surface Potential ◽

Room Temperature ◽

Areal Density ◽

Film Deposition ◽

Floating Gate ◽

Metal Silicide ◽

Kelvin Probe ◽

Measuring Surface ◽

Surface Potential Measurements ◽

Mis Capacitors

We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.

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