Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application

2013 ◽  
Vol 1510 ◽  
Author(s):  
Seiichi Miyazaki
Keyword(s):  
Room Temperature ◽  
Drain Current ◽  
Electron Injection ◽  
Floating Gate ◽  
Back Side ◽  
Mos Capacitors ◽  
Optoelectronic Application ◽  
And Storage ◽  
Si Quantum Dots

ABSTRACTWe have fabricated a hybrid nanodots floating gate (FG) in which Si quantum dots (QDs) and silicide nanodots (NDs) are stacked with a very thin SiO2 interlayer in order to satisfy both multiple valued capability and charge storage capacity for a sufficient memory window and to open up novel functionality for optoelectronic application. In electron charging and discharging characteristics measured with application of pulsed gate biases to MOS capacitors with a hybrid NDs FG, stepwise changes in the rates for electron injection and emission were revealed with increasing pulse width at room temperature. Also, nMOSFETs with a hybrid NDs FG show unique hysteresis with stepwise changes in the drain current - gate voltage characteristics. The observed characteristics can be interpreted in terms that the electron injection and storage into silicide-NDs proceed through the discrete charged states of Si-QDs. For MOS capacitors with a triple-stacked hybrid NDs FG fabricated by adding another Si-QDs, by subgap light irradiation from the back side of the Si substrate, a distinct infrared optical response in C-V characteristics was detected at room temperature. The result is attributable to the shift of charge centroid in the hybrid NDs FG as a result of transfer of photoexcited electrons from silicide NDs to Si-QDs.

Room temperature electron tunneling and storage in a nanocrystalline silicon floating gate structure

2004 ◽  
Vol 338-340 ◽  
pp. 318-321 ◽  
Author(s):  
Liangcai Wu ◽  
Min Dai ◽  
Xinfan Huang ◽  
Yongjun Zhang ◽  
Wei Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electron Tunneling ◽  
Nanocrystalline Silicon ◽  
Floating Gate ◽  
Gate Structure ◽  
Temperature Electron ◽  
And Storage

Effects of Chemical Preservatives and Storage on Constituents Used to Characterize Lemon Juice

1968 ◽  
Vol 51 (1) ◽  
pp. 6-10
Author(s):  
Carl E Vandercook ◽  
Henry C Guerrero
Keyword(s):  
Room Temperature ◽  
Total Phenolics ◽  
Chemical Characterization ◽  
Lemon Juice ◽  
Potassium Sorbate ◽  
Practical Applications ◽  
Regression Approach ◽  
And Storage

Abstract The effects of sulfur dioxide, sodium benzoate, and potassium sorbate preservatives on the analytical methods for chemically characterizing lemon juice were studied. None of the preservatives had any effects on the analyses for total acidity as citric acid, the l-malic acid, the UV absorbance at the 330 m/x peak (referred to as the total phenolics), or the formol determination of total amino acids (after expelling the S02 by boiling 1 min). The study was continued over storage periods of up to 17 weeks at room temperature and 6 weeks at 30 °C. The constituents measured remained relatively stable except for some small but statistically significant changes that were apparently a function of both the juice and, in the case of the total phenolics, the preservative used. For practical applications, the changes did not affect the multiple regression approach to the chemical characterization of lemon juice

Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/ Kelvin Probe Technique

2007 ◽  
Vol 561-565 ◽  
pp. 1213-1216 ◽  
Author(s):  
Ryousuke Nishihara ◽  
Katsunori Makihara ◽  
Yoshihiro Kawaguchi ◽  
Mitsuhisa Ikeda ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Nickel Silicide ◽  
Kelvin Probe ◽  
Equivalent Thickness ◽  
Probe Technique ◽  
Retention Characteristics ◽  
Dot Density ◽  
Si Quantum Dots

We have formed high density nanodots of nickel silicide (NiSi) on ultrathin SiO2 and characterized their electronic charged states by using an AFM/Kelvin probe technique. Si quantum dots (Si-QDs) with an areal dot density of ~2.5x1011cm-2 were self-assembled on ~3.6nm-thick thermally-grown SiO2 by controlling the early stages of LPCVD using pure SiH4 gas. Subsequently, electron beam evaporation of Ni was carried out as thin as ~1.7nm in equivalent thickness at room temperature and followed by 300°C anneal for 5min in vacuum. XPS and AFM measurements confirm the formation of NiSi dots with an average dot height of ~8nm. After removal of Ni residue on SiO2 by a dilute HCl solution, bias conditions required for electron charging to NiSi dots were compared with those to pure Si-QDs dots and Ni dots. The surface potential changes stepwise with respect to the tip bias due to multistep electron injection and extraction of NiSi nanodots. In addition, it is confirmed that charge retention characteristics of NiSi dots are superior to those of Si-QDs with the almost same size.

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

2009 ◽  
Vol 1208 ◽  
Author(s):  
Seiichi Miyazaki ◽  
Naoya Morisama ◽  
Sho Nakanishi ◽  
Mitsuhisa Ikeda ◽  
Katsunori Makihara
Keyword(s):  
Charge Injection ◽  
Chemical Vapor ◽  
Areal Density ◽  
Optical Response ◽  
Floating Gate ◽  
Charge Storage ◽  
Discrete Energy ◽  
Mos Capacitors ◽  
Capacitance Voltage ◽  
Si Quantum Dots

AbstractWe have proposed and fabricated a hybrid nanodots floating gate (FG), in which Si quantum dots (QDs) as charge injection/emission nodes and NiSi nanodots as charge storage nodes are stacked with an ultrathin SiO2 interlayer, to satisfy both large memory window and multivalued capability. In this study, Si-QDs with an areal density of ˜3×1011cm-2 were formed on ultrathin SiO2 layer by controlling SiH4 chemical vapor deposition (CVD) and NiSi nanodots were prepared by full-silicidation of Si-QDs promoted with remote H2-plasma exposure after Ni evaporation. From capacitance-voltage(C-V) characteristics of MOS capacitors with a NiSi nanodots/Si-QDs hybrid FG, stable storage of many charges in the deep potential well of each NiSi nanodot was confirmed. Also, by applying pulsed gate biases, stepwise charge injection to and emission from NiSi nanodots through discrete energy states in Si-QDs were demonstrated. In addition, by 1310nm (˜0.95eV) light irradiation, a distinct optical response in C-V characteristics was detected, which can be interpreted in terms of the shift of charge centroid in the hybrid FG stack due to transfer of photoexcited electrons from NiSi-nanodots to the Si-QDs.

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

2011 ◽  
Vol 470 ◽  
pp. 135-139 ◽  
Author(s):  
Naoya Morisawa ◽  
Mitsuhisa Ikeda ◽  
Katsunori Makihara ◽  
Seiichi Miyazaki
Keyword(s):  
Quantum Dots ◽  
Electron Tunneling ◽  
Floating Gate ◽  
Light Irradiation ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Si Substrate ◽  
Mos Capacitors ◽  
Mos Structures ◽  
Si Quantum Dots

We have studied the effect of 1310 nm light irradiation on the charge distribution of a hybrid floating gate consisting of silicon quantum dots (Si-QDs) and NiSi Nanodots (NiSi-NDs) in MOS capacitors. The light irradiation resulted in reduced flat-band voltage shifts of the MOS capacitors in comparison to the shift in the dark. This result can be interpreted in terms of the shift of the charge centroid toward the gate side in the hybrid floating gate caused by the photoexcitation of electrons in NiSi-NDs and the subsequent electron tunneling to Si-QDs. The capacitance of the MOS capacitors at constant gate biases was modulated with pulsed light irradiation. When the light irradiation was turned off, capacitance recovered to its level in the dark, indicating that the photoexited charges were transferred between the Si-QDs and the NiSi-NDs without being emitted to the Si substrate and gate electrode.

scholarly journals Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

2018 ◽  
Vol 65 (1) ◽  
pp. 10 ◽  
Author(s):  
Miguel Angel Dominguez Jimenez ◽  
Jose Pau ◽  
Ovier Obregon ◽  
Anayantzi Luna ◽  
Andres Redondo
Keyword(s):  
Room Temperature ◽  
Gate Dielectric ◽  
High Mobility ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Mos Capacitors ◽  
Dielectric Characteristics ◽  
Zinc Nitride ◽  
Capacitance Voltage

In this work, high mobility TFTs based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 TFTs. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 TFTs. In addition, n-type MOS capacitors were fabricated and characterized by capacitance – voltage and capacitance – frequency measurements to evaluate the dielectric characteristics of the SOG film.      

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

Investigations on the Nature of Hemophilia A

1963 ◽  
Vol 09 (01) ◽  
pp. 030-052 ◽  
Author(s):  
Eberhard Mammen
Keyword(s):  
Factor Viii ◽  
Human Plasma ◽  
Barium Sulfate ◽  
Freeze Drying ◽  
Room Temperature ◽  
Hemophilia A ◽  
Normal Human Plasma ◽  
Normal Human ◽  
And Storage ◽  
Prothrombin Activation

SummaryIn this paper an inhibitor is described that is found in hemophilic plasma and serum different from any till now described inhibitor. The inhibitor only inhibits prothrombin activation in the “intrinsic clotting systems”. This inhibitor is probably not present in normal human plasma or serum. It is destroyed by ether and freeze drying, is labile to acid and storage at room temperature. It is stable upon dialysis and has not been adsorbed on barium sulfate, aluminum hydroxide or kaolin. It precipitates at 50% v/v saturation with alcohol. The nature of this inhibitor seems to be a protein or lipoprotein.Factor VIII was isolated from hemophilic plasma. The amount isolated was the same as from normal plasma and the activity properties were not different. Hemophiliacs have normal amounts of factor VIII.

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