Effects of annealing temperature on the structure characteristics of Fe83Si6B6Cu1Nb1P1.5C1.5 amorphous ribbons

2022 ◽  
Vol 580 ◽  
pp. 121388
Author(s):  
Xi Huang ◽  
Song Ding ◽  
Zemin Wang ◽  
Lianbo Wang ◽  
Min Liu ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Structure Characteristics ◽  
Amorphous Ribbons

Thermal Annealing Dependence of High-Frequency Magnetoimpedance in Amorphous and Nanocrystalline FeSiBCuNb Ribbons

2008 ◽  
Vol 8 (6) ◽  
pp. 2873-2882 ◽  
Author(s):  
B. Hernando ◽  
V. M. Prida ◽  
M. L. Sanchez ◽  
J. Olivera ◽  
C. Garcia ◽  
...  
Keyword(s):  
High Frequency ◽  
Annealing Temperature ◽  
Driving Frequency ◽  
Network Analyzer ◽  
Frequency Range ◽  
Isothermal Heating ◽  
Amorphous Ribbons ◽  
Maximum Value ◽  
Different Temperatures ◽  
Nanocrystalline Sample

The magnetoimpedance (MI) effect in Fe73.5Si13.5B9Nb3Cu1 melt-spun amorphous ribbons has been studied in the frequency range (1–500 MHz). Isothermal heating treatments in a furnace have been employed to nanocrystallize the ribbons (1 h at 565 °C in a vacuum of 10–3 mbar), while other samples were annealed at lower temperatures (400 and 475 °C during 1 h), in order to evaluate the influence of the annealing temperature on the MI effect. The high-frequency impedance was measured using a technique based on the reflection coefficient measurements of a specific transmission line by using a network analyzer. Frequency dependence of the MI ratio, ΔZ/Z, and both resistive, ΔR/R, and reactive, ΔX/X, components of magnetoimpedance were measured in the amorphous and annealed states, at different temperatures. A maximum value of the MI ratio of about 50% at a driving frequency of 18 MHz is obtained in the nanocrystalline (annealed at 565 °C) ribbon. Maxima for R/R of about 81% at 85 MHz and ΔX/X around 140% at 5 MHz were also achieved. It is revealed that the microstructural evolution in the nanocrystalline sample leads to a magnetic softening, an optimum domain structure and a permeability which is sensitive to frequency and applied magnetic field, generating a large MI response.

Influence of Annealing Temperature on Magnetic Properties in Co-Based Amorphous Ribbons

2004 ◽  
Vol 449-452 ◽  
pp. 1049-1052
Author(s):  
Li Jin ◽  
Y.W. Rheem ◽  
Cheol Gi Kim ◽  
De Sheng Sun ◽  
Chong Oh Kim ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Domain Wall ◽  
Exchange Bias ◽  
Wall Motion ◽  
Annealing Temperature ◽  
Domain Wall Motion ◽  
Bias Field ◽  
Crystalline Layer ◽  
Magnetization Rotation ◽  
Amorphous Ribbons

The magnetic properties were investigated on Co66Fe4B15Si15 amorphous ribbons of annealed at temperature range from 473 K to 773 K in vacuum (A-batch) and open air (B-batch). Static permeability from domain wall motion decreases with annealing temperature both in A- and B-batch sample. The permeability from magnetization rotation increases up to 700 K annealing temperature, but then decreases. The GMI profiles show a symmetric curve in A-batch samples irrespective of annealing temperature. In B-batch samples, symmetric profiles are shown up to 650 K annealing temperature, while they becomes asymmetric for further annealing temperature, due to the exchange bias-field induced by surface crystalline layer.

Study on the Magnetic Induction Effect of Rare-Earth La Modified Amorphous Ribbons

2011 ◽  
Vol 415-417 ◽  
pp. 527-531
Author(s):  
Da Guo Jiang ◽  
Cao Bing Yang ◽  
Guo Tai Zheng
Keyword(s):  
Magnetic Field ◽  
Rare Earth ◽  
Magnetic Induction ◽  
Annealing Temperature ◽  
Amorphous Ribbon ◽  
Induction Effect ◽  
Amorphous Ribbons ◽  
Rare Earth La ◽  
The Magnetic Field ◽  
Rare Earth Content

Prepared rare-earth La modified amorphous ribbon by doping Rare-earth La in Fe78Si9B13amorphous alloy. Investigated rare-earth content and annealing temperature as well as their influence on the magnetic induction effect and its amplitude. The results show that, when magnetic field is less than 1356 A/m, with the increase of Rare-earth content,the magnetic induction effect first increased and then decreased, when the magnetic field strength greater than 1356 A/m, the Rare-earth content influence little on magnetic induction effect, changing amplitude of magnetic induction effect shows first increased and then decreased with increasing Rare-earth content.

Synthesis and Crystal Structure of Hexagonal DyMnO3

2004 ◽  
Vol 449-452 ◽  
pp. 1045-1048 ◽  
Author(s):  
Naoki Kamegashira ◽  
Hirohisa Sato ◽  
Satoshi Ashizuka
Keyword(s):  
Crystal Structure ◽  
Exchange Bias ◽  
Wall Motion ◽  
Annealing Temperature ◽  
Domain Wall Motion ◽  
Bias Field ◽  
Synthesis And Crystal Structure ◽  
Crystalline Layer ◽  
Magnetization Rotation ◽  
Amorphous Ribbons

The magnetic properties were investigated on Co66Fe4B15Si15 amorphous ribbons of annealed at temperature range from 473 K to 773 K in vacuum (A-batch) and open air (B-batch). Static permeability from domain wall motion decreases with annealing temperature both in A- and B-batch sample. The permeability from magnetization rotation increases up to 700 K annealing temperature, but then decreases. The GMI profiles show a symmetric curve in A-batch samples irrespective of annealing temperature. In B-batch samples, symmetric profiles are shown up to 650 K annealing temperature, while they becomes asymmetric for further annealing temperature, due to the exchange bias-field induced by surface crystalline layer.

Nucleation of Disorder in Fe3Al Alloys

1967 ◽  
Vol 25 ◽  
pp. 312-313
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Antiphase Domain ◽  
Effect Of Temperature ◽  
Domain Structures ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Higher Temperature ◽  
The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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