Xenon bubbles formed by ion implantation in zirconium alloy films

AbstractRF-magnetron sputter deposited copper/zirconium alloy films have been characterised in terms of resistivity, composition, microstructure, texture and stress. The properties and electromigration reliability of these alloys have been compared to those of pure sputtered copper films. The surface segregation of zirconium within the films after annealing has been studied. We have proposed a mechanism in which zirconium at the copper surface can influence the electromigration damage process, enhancing reliability.

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Influence of Plasma-Immersion Titanium-Ion Implantation on the Kinetics of Hydrogen Penetration into E110 Zirconium Alloy

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s102745101803031x ◽

2018 ◽

Vol 12 (3) ◽

pp. 570-575

Author(s):

E. B. Kashkarov ◽

N. N. Nikitenkov ◽

A. N. Sutygina ◽

M. S. Syrtanov ◽

S. A. Zakharchenko ◽

...

Keyword(s):

Ion Implantation ◽

Zirconium Alloy ◽

Hydrogen Penetration ◽

Kinetics Of

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Surface Structure and Properties of Niobium Zirconium Alloy After Boron-10 Ion Implantation

Russian Physics Journal ◽

10.1007/s11182-021-02393-4 ◽

2021 ◽

Author(s):

Yu. F. Ivanov ◽

V. P. Frolova ◽

A. S. Bugaev ◽

B. E. Kadlubovich ◽

A. G. Nikolaev ◽

...

Keyword(s):

Ion Implantation ◽

Surface Structure ◽

Zirconium Alloy ◽

Structure And Properties

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Hydrogen Interaction with Deep Surface Modified Zr-1Nb Alloy by High Intensity Ti Ion Implantation

Metals ◽

10.3390/met8121081 ◽

2018 ◽

Vol 8 (12) ◽

pp. 1081 ◽

Cited By ~ 3

Author(s):

Egor Kashkarov ◽

Alexander Ryabchikov ◽

Alexander Kurochkin ◽

Maxim Syrtanov ◽

Alexey Shevelev ◽

...

Keyword(s):

Ion Implantation ◽

High Intensity ◽

Zirconium Alloy ◽

Hydrogen Permeation ◽

Lamellar Microstructure ◽

Elemental Distribution ◽

Deep Surface ◽

Hydrogen Interaction ◽

Modified Layer ◽

Surface Modified

A deep surface modified TiZr layer was fabricated by high-intensity low-energy titanium ion implantation into zirconium alloy Zr-1Nb. Gas-phase hydrogenation was performed to evaluate protective properties of the modified layer against hydrogen permeation into Zr-1Nb alloy. The effects of ion implantation and hydrogen on microstructure, phase composition and elemental distribution of TiZr layer were analyzed by scanning electron microscopy, X-ray diffraction, and glow-discharge optical emission spectroscopy, respectively. It was revealed that TiZr layer (~10 μm thickness) is represented by α′ + α(TiZr) lamellar microstructure with gradient distribution of Ti through the layer depth. It was shown that the formation of TiZr layer provides significant reduction of hydrogen uptake by zirconium alloy at 400 and 500 °C. Hydrogenation of the modified layer leads to refinement of lamellar plates and formation of more homogenous microstructure. Hydrogen desorption from Ti-implanted Zr-1Nb alloy was analyzed by thermal desorption spectroscopy. Hydrogen interaction with the surface modified TiZr layer, as well as its resistance properties, are discussed.

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Amorphous transition metal-metalloid alloy films prepared by ion implantation

Thin Solid Films ◽

10.1016/0040-6090(79)90245-1 ◽

1979 ◽

Vol 58 (2) ◽

pp. 253-258 ◽

Cited By ~ 15

Author(s):

P.J. Grundy ◽

A. Ali ◽

C.E. Christodoulides ◽

W.A. Grant

Keyword(s):

Transition Metal ◽

Ion Implantation ◽

Alloy Films

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Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100054765 ◽

1982 ◽

Vol 40 ◽

pp. 460-461

Author(s):

P. Ling ◽

R. Gronsky ◽

J. Washburn

Keyword(s):

Electron Diffraction ◽

Ion Implantation ◽

Diffraction Analysis ◽

Diffraction Pattern ◽

Direct Consequence ◽

The Other ◽

Electron Diffraction Analysis ◽

Defect Microstructures ◽

Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106600 ◽

1988 ◽

Vol 46 ◽

pp. 908-909

Author(s):

E.G. Bithell ◽

W.M. Stobbs

Keyword(s):

Ion Implantation ◽

Diffusion Coefficients ◽

Dark Field ◽

Atomic Mass ◽

Composition Profile ◽

Semiconductor Heterostructures ◽

Transmission Electron ◽

Microscope Images ◽

Damage Process ◽

Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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Dynamic studies of silicide-mediated crystallization of amorphous silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131395 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1352-1353

Author(s):

C. Hayzelden ◽

J. L. Batstone

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Metallic Phase ◽

Single Crystal Substrate ◽

Free Electrons ◽

Melt Temperature ◽

Transmission Electron ◽

Crystal Substrate ◽

High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

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