Role of silver nanotube on conductivity, dielectric permittivity and current voltage characteristics of polyvinyl alcohol-silver nanocomposite film

2017 ◽  
Vol 111 ◽  
pp. 266-273 ◽  
Author(s):  
P.S. Mukherjee ◽  
A.K. Das ◽  
B. Dutta ◽  
A.K. Meikap
2013 ◽  
Vol 591 ◽  
pp. 54-60
Author(s):  
Xiu Li Fu ◽  
Yan Xu Zang ◽  
Zhi Jian Peng

The effect of WO3doping on microstructural and electrical properties of ZnO-Pr6O11based varistor materials was investigated. The doped WO3plays a role of inhibitor in ZnO grain growth, resulting in decreased average grain size from 2.68 to 1.68 μm with increasing doping level of WO3from 0 to 0.5 mol%. When the doping level of WO3was lower than 0.05 mol%, the nonlinear current-voltage characteristics of the obtained varistors could be improved significantly with increasing amount of WO3doped. But when the doping level of WO3became higher, their nonlinear current-voltage performance would be dramatically deteriorated when more WO3was doped. The optimum nonlinear coefficient, varistor voltage, and leakage current of the samples were about 13.71, 710 V/mm and 13 μA/cm2, respectively, when the doping level of WO3was in the range from 0.03 to 0.05 mol%.


2019 ◽  
Vol 970 ◽  
pp. 75-81
Author(s):  
Alexey Zavgorodniy ◽  
Aitbek Aimukhanov ◽  
Assylbek Zeinidenov ◽  
Galina Vavilova

The role of spin states in the process of charge carrier transport in copper phthalocyanine (CuPc) nanowires has been established. According to the data obtained, CuPc nanowires are in the η-phase. The current-voltage characteristics (IVC) of a photosensitive cell based on CuPc nanowires in a magnetic field are investigated. As a result of experiments, it was found that applying an external magnetic field, the spins of two positively charged polarons are oriented in one direction. The channel of formation of the bipolaron is blocked. As a result, a decrease in the short-circuit current of the photosensitive cell is observed by more than 61%.


2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.


2013 ◽  
Vol 54 (8) ◽  
pp. 1811-1816 ◽  
Author(s):  
Mert Yıldırım ◽  
Muharrem Gökçen ◽  
Tuncay Tunç ◽  
İbrahim Uslu ◽  
Şemsettin Altındal

1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.


2000 ◽  
Vol 2 (2) ◽  
pp. 87-96 ◽  
Author(s):  
Danuta Wróbel ◽  
Andrzej Boguta ◽  
Rodica M. Ion

Phthalocyanines are synthetic dyes which are shown to be good photoconverters which can be applied in a photoelectrochemical cell constructed of semiconducting and metallic electrodes. By means of spectroscopic investigation (absorption,fluorescence and photoacoustics) we have followed spectral properties of phthalocyanines complexed with metals dissolved in polyvinyl alcohol solution in order to determine the pathways of deactivation of their excited states. Spectroscopic investigations were accompanied with photovoltaic/photocurrent and current-voltage characteristics of the photoelectrochemical cell with dyes. It has been shown that there is a correlation between dye fluorescence feature and dye ability to electric photoconversion. The comparison of new data for metallic phthalocyanines with those obtained for porphyrins is discussed.


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