Ultrafine-grained Cu50(FeCo)50 immiscible alloy with excellent thermal stability

2021 ◽  
pp. 111532
Author(s):  
Ondrej Adam ◽  
Vit Jan ◽  
Zdenek Spotz ◽  
Jan Cupera ◽  
Vaclav Pouchly
2020 ◽  
Vol 321 ◽  
pp. 11060
Author(s):  
Grigory Dyakonov ◽  
Sergey Mironov ◽  
Tatyana Yakovleva ◽  
Irina Semenova

The paper examined annealing behavior of ultrafine-grained Ti Grade 4. The ultrafine-grained microstructure was produced by equal-channel angular pressing (ECAP) technique by using a Conform scheme and was characterized by a mean grain size of d=0.3 μm and non-equilibrium grain boundaries. The ultrafine-grained structure was found to be stable up to 400°C. The excellent thermal stability was attributed to a strain-ageing, i.e., the enhanced diffusion of interstitial solutes resulting in a formation of solute atmospheres at/near grain boundaries and dislocations. At 450–500°C, a rapid growth of strain-free grains was observed to occur. This process eliminated severely-deformed microstructure and gave rise to abrupt material softening. A further increase of the annealing temperature above 600°С resulted in precipitation of lenticular dispersoids as well as iron-rich globular β-particles. This surprising phenomenon promoted a subtle hardening effect.


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


Author(s):  
Lu Wang ◽  
Shengdong Sun ◽  
Huajie Luo ◽  
Yang Ren ◽  
Hui Liu ◽  
...  

The realization of high piezoelectric performance and excellent temperature stability simultaneously in lead-free ceramics is the key for replacing Pb-containing perovskites in industry. In this study, large piezoelectric performance (d33...


RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.


RSC Advances ◽  
2016 ◽  
Vol 6 (23) ◽  
pp. 19417-19429 ◽  
Author(s):  
Kai Wang Chan ◽  
Cheng Zhu Liao ◽  
Hoi Man Wong ◽  
Kelvin Wai Kwok Yeung ◽  
Sie Chin Tjong

The WST-1 assay shows that the PEEK/15 vol% nHA–1.9 vol% CNF hybrid composite has excellent biocompatibility.


2021 ◽  
Author(s):  
Weiwei Wu ◽  
Yuanpeng Zhang ◽  
Yuepin Zhang ◽  
Jianxu Hu

A series of Eu3+ and Tb3+ singly doped Ba3YB3O9 phosphors were synthesized by a solution combustion approach. The most luminescent phosphors were selected as the starting materials to fabricate phosphor...


Author(s):  
Peiyao Zhao ◽  
Lingling Chen ◽  
Longtu Li ◽  
Xiaohui Wang

Dielectric capacitor has received growing interest for advanced electrical and electronic systems. However, the low energy density and poor thermal stability at high temperature severely hinder its practical applications. Herein,...


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