scholarly journals Expeditious and eco-friendly solution-free self-patterning of sol–gel oxide semiconductor thin films

2020 ◽  
Vol 194 ◽  
pp. 108949
Author(s):  
Do-Kyung Kim ◽  
Jun-Ik Park ◽  
Jaewon Jang ◽  
In Man Kang ◽  
Jaehoon Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Oxide Semiconductor ◽  
Semiconductor Thin Films

The Effect of Operational Parameters on the Photocatalytic Degradation of C.I. Reactive Yellow 86 Textile Dye Using Manganese Zinc Oxide Nanocomposite Thin Films

2011 ◽  
Vol 14 (2) ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Elham Askari
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Sol Gel ◽  
Oxide Semiconductor ◽  
Textile Dye ◽  
X Ray ◽  
Manganese Zinc ◽  
Zinc Oxide Films ◽  
Semiconductor Thin Films ◽  
Sol Gel Process

AbstractManganese zinc oxide semiconductor thin films have been deposited by sol-gel process on glass substrate which was characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and UV-Vis spectroscopy (UV-Vis). The as deposited thin films on glass are monophasic with good crystallinity and hexagonal wurtzite structure. In order to increase the photocatalytic efficiency of the zinc oxide coatings the authors optimized the sol-gel process and doped the coatings with manganese. By slightly doping the zinc oxide films with 2 at% manganese the photocatalytic performance is increased compared to pure zinc oxide semiconductor thin films. The photocatalytic performance of the manganese zinc oxide films was evaluated by the decomposition of a textile dye (C.I. Reactive Yellow 86) (RY86) with UV light irradiation. This investigation will give a new insight to understanding the industrial textile dye photodegradation in aquatic environment.

scholarly journals Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 277 ◽  
Author(s):  
Chien-Yie Tsay ◽  
Shih-Ting Chen ◽  
Man-Ting Fan
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Wavelength Region ◽  
Blue Shift ◽  
Light Illumination ◽  
Photoelectrical Properties ◽  
Semiconductor Thin Films ◽  
Metal Semiconductor Metal ◽  
Photo Detection ◽  
Transparent Semiconductor

The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on MgxZn1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of MgxZn1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the films rose from 6.1 × 102 to 1.4 × 104 Ω·cm with an increase in Mg content from x = 0 to x = 0.3. Compared with those of the pure ZnO thin film, the PL emission peaks of the MgZnO thin films showed an apparent blue-shift feature in the UV and visible regions. The photo-detection capability was investigated under visible, UVA, and UVC light illumination. Linear I-V characteristics were obtained in these ZnO-based photodetectors under dark and light illumination conditions, indicating an ohmic contact between the Au electrodes and ZnO-based thin films. It was found that the pure ZnO photodetector exhibited the best photoconductivity gain, percentage of sensitivity, and responsivity under UVA illumination. Under UVC illumination, the photoconductivity gain and percentage of sensitivity of the MgZnO photodetectors were better than those of the pure ZnO photodetector.

Sol–Gel Processed p-Type CuAlO2 Semiconductor Thin Films and the Integration in Transistors

2019 ◽  
Vol 66 (3) ◽  
pp. 1458-1463 ◽  
Author(s):  
Chunfeng Wang ◽  
Haotian Zhu ◽  
You Meng ◽  
Shengbin Nie ◽  
Yuna Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Semiconductor Thin Films ◽  
P Type

Preparation and CO2 Gas Sensitive Properties of CuO-SrTiO3-Based Semiconductor Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 311-314 ◽  
Author(s):  
Yan Fei Gu ◽  
Hui Ming Ji ◽  
Bin Zhang ◽  
Ting Xian Xu
Keyword(s):  
Thin Films ◽  
Chelating Agents ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Good Resistance ◽  
Gas Sensitivity ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Ft Ir

CuO-SrTiO3-based thin films were prepared by novel sol-gel technology on Al2O3 substrates using Cu(NO3)2, SrCl2 and TiCl4 as the starting materials, critic acid and ethylene glycol as chelating agents. CO2 sensing properties of the films were investigated. Structure characteristics of the sol and asgrown thin films were analyzed by FT-IR spectrum, X-ray diffraction and SEM. The results reveal that the films consisted of CuO phase and SrTiO3 phase have nanocrystalline microstructure at 750°C for 40 min. The modified CuO-SrTiO3 thin films exhibit good resistance-temperature and gas sensitivity properties in a wide range of temperature. The films exposed to 6% CO2 show that sensitivity are 32, and response and recover time are within 2 s at 250 °C operating temperature.

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