Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy

2010 ◽  
Vol 312 (14) ◽  
pp. 2073-2077 ◽  
Author(s):  
C. Sartel ◽  
D.L. Dheeraj ◽  
F. Jabeen ◽  
J.C. Harmand
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Arsenic Species ◽  
Gaas Nanowires ◽  
Nanowires Growth ◽  
Kinetics Of

Effect of substrate temperature on GaAs nanowires growth directly on Si (111) substrates by molecular beam epitaxy

2020 ◽  
Vol 23 ◽  
pp. 685-689
Author(s):  
Kay Khaing Oo ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Piyasarn Praserthdam ◽  
Somchai Ratanathammaphan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Nanowires Growth

scholarly journals Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)

2019 ◽  
Vol 1 (11) ◽  
pp. 4433-4441 ◽  
Author(s):  
Marco Vettori ◽  
Alexandre Danescu ◽  
Xin Guan ◽  
Philippe Regreny ◽  
José Penuelas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Significant Role ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Incidence Angle ◽  
Group Iii ◽  
Element Fluxes ◽  
Gaas Nanowires ◽  
Diffusion Controlled ◽  
Kinetics Of

In this work we show that the incidence angle of group-III element fluxes plays a significant role in the diffusion-controlled growth of self-assisted III–V nanowires by molecular beam epitaxy.

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

scholarly journals Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

2018 ◽  
Vol 30 (6) ◽  
pp. 065602 ◽  
Author(s):  
Suzanne Lancaster ◽  
Heiko Groiss ◽  
Tobias Zederbauer ◽  
Aaron M Andrews ◽  
Donald MacFarland ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Axial Growth

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Fukatsu ◽  
K. Fujita ◽  
H. Yaguchi ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Lower Limit ◽  
Molecular Beam ◽  
Growth Direction ◽  
High Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

scholarly journals Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

2010 ◽  
Vol 82 (3) ◽  
Author(s):  
G. E. Cirlin ◽  
V. G. Dubrovskii ◽  
Yu. B. Samsonenko ◽  
A. D. Bouravleuv ◽  
K. Durose ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires
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