Fabrication of sub-10 nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

2011 ◽  
Vol 88 (8) ◽  
pp. 2338-2341 ◽  
Author(s):  
M.A. Mohammad ◽  
S.K. Dew ◽  
S. Evoy ◽  
M. Stepanova
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Carbon Nitride ◽  
Hydrogen Silsesquioxane ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride

Hard plasma chemical coatings based on silicon carbon nitride

2007 ◽  
Vol 46 (11-12) ◽  
pp. 543-549 ◽  
Author(s):  
L. A. Ivashchenko ◽  
V. I. Ivashchenko ◽  
O. K. Porada ◽  
S. M. Dub ◽  
P. L. Skrinskii ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Plasma Chemical ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride

PECVD synthesis, optical and mechanical properties of silicon carbon nitride films

2015 ◽  
Vol 339 ◽  
pp. 102-108 ◽  
Author(s):  
Evgeniya Ermakova ◽  
Yurii Rumyantsev ◽  
Artur Shugurov ◽  
Alexey Panin ◽  
Marina Kosinova
Keyword(s):  
Mechanical Properties ◽  
Carbon Nitride ◽  
Silicon Carbon ◽  
Optical And Mechanical Properties ◽  
Silicon Carbon Nitride

Silicon Carbon Nitride Thin Films Produced by Magnetron Reactive Sputtering Physical Vapour Deposition: Structural, Chemical and Mechanical Characterisation

2017 ◽  
Vol 33 (1-2) ◽  
pp. 44
Author(s):  
P. Kouakou ◽  
P. Yoboue ◽  
B. Ouattara ◽  
V. Hody ◽  
P. Choquet ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Vapour Deposition ◽  
Reactive Sputtering ◽  
Mechanical Characterisation ◽  
Silicon Carbon ◽  
Film Adhesion ◽  
Experimental Parameters ◽  
Nitrogen Percentage ◽  
Silicon Carbon Nitride

Amorphous silicon carbon nitride films were deposited on silicon and WC-Co substrates by magnetron reactive sputtering in Ar/N<sub>2</sub> gas mixture with carbon and silicon targets. The influence of experimental parameters on the films morphological, structural and mechanical properties was studied. The general morphology of the film is observed by SEM and TEM. EDXS and FTIR were used to determine the film chemical composition and the nature of chemical bonding. It was observed that C≡N bonds and nitrogen percentage in the film are promoted when the substrate is biased. The role of an underlayer and the influence of its nature on the film adhesion on WC/Co substrates were also studied. In this case, nanoscratch tests showed that a SiNx thin film could be an appropriate underlayer.

Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

1999 ◽  
Vol 592 ◽  
Author(s):  
L. C. Chen ◽  
C. T. Wu ◽  
C.-Y Wen ◽  
J.-J. Wu ◽  
W. T. Liu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Interface Roughness ◽  
Electrical Characteristics ◽  
Ion Beam Sputtering ◽  
Electrical Measurements ◽  
Sputtering Deposition ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

ABSTRACTDielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

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