High-dose ion-implanted photoresist stripping in environmentally benign supercritical CO2 nonfluorous surfactant microemulsions

Stripping high-dose ion-implanted (HDI) photoresists is considered as one of the most challengeable processes in the semiconductor manufacturing due to the difficulty of both removing crust (or carbonized layer) formed during the ion implantation and preventing the silicon recess after subsequent cleaning. The HDI photoresists are conventionally removed by using a two-step process, low-pressure plasma ashing in a single-wafer tool followed by SPM-based wet stripping in a batch immersion tool. Alternative HDI-resist strip methods have been proposed, such as a combination of physical-force pretreatments followed by more traditional wet cleaning steps [1], a SPM-based all-wet process at extremely high temperature (≥ 200°C) [2], and supercritical CO2 combined with chemical additive formulations [3].

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The effects of supercritical CO2 formulations on the removal of high-dose ion-implanted photoresists

Microelectronic Engineering ◽

10.1016/j.mee.2013.03.163 ◽

2013 ◽

Vol 108 ◽

pp. 50-56 ◽

Cited By ~ 3

Author(s):

Bo Li ◽

Tingting Han ◽

Lei Wang ◽

Qingpu Wang ◽

Yuxiang Li

Keyword(s):

Supercritical Co2 ◽

High Dose ◽

Ion Implanted

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Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

MRS Proceedings ◽

10.1557/proc-4-689 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 2

Author(s):

Douglas H. Lowndes ◽

Bernard J. Feldman

Keyword(s):

Radiative Recombination ◽

Laser Annealing ◽

Laser Energy ◽

Pulsed Laser ◽

High Dose ◽

Pulsed Laser Annealing ◽

Recombination Centers ◽

Pl Intensity ◽

P Type ◽

Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

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Effect of Silicon, Titanium, and Zirconium Ion Implantation on NiTi Biocompatibility

Advances in Materials Science and Engineering ◽

10.1155/2012/706094 ◽

2012 ◽

Vol 2012 ◽

pp. 1-16 ◽

Cited By ~ 19

Author(s):

L. L. Meisner ◽

A. I. Lotkov ◽

V. A. Matveeva ◽

L. V. Artemieva ◽

S. N. Meisner ◽

...

Keyword(s):

Stem Cells ◽

Flow Cytometry ◽

Mesenchymal Stem Cells ◽

Ion Implantation ◽

Cell Counting ◽

High Dose ◽

Surface Layers ◽

Test Flow ◽

Ion Implanted

The objective of the work was to study the effect of high-dose ion implantation (HDII) of NiTi surface layers with Si Ti, or Zr, on the NiTi biocompatibility. The biocompatibility was judged from the intensity and peculiarities of proliferation of mesenchymal stem cells (MSCs) on the NiTi specimen surfaces treated by special mechanical, electrochemical, and HDII methods and differing in chemical composition, morphology, and roughness. It is shown that the ion-implanted NiTi specimens are nontoxic to rat MSCs. When cultivated with the test materials or on their surfaces, the MSCs retain the viability, adhesion, morphology, and capability for proliferationin vitro, as evidenced by cell counting in a Goryaev chamber, MTT test, flow cytometry, and light and fluorescence microscopy. The unimplanted NiTi specimens fail to stimulate MSC proliferation, and this allows the assumption of bioinertness of their surface layers. Conversely, the ion-implanted NiTi specimens reveal properties favorable for MSC proliferation on their surface.

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The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation.

MRS Proceedings ◽

10.1557/proc-27-205 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 10

Author(s):

J.S. Williams ◽

D.J. Chivers ◽

R.G. Elliman ◽

S.T. Johnson ◽

E.M. Lawson ◽

...

Keyword(s):

Ion Implantation ◽

Strong Evidence ◽

Heavy Ion ◽

High Dose ◽

Porous Structures ◽

Structural Modifications ◽

Gaas Substrates ◽

Ion Implanted

ABSTRACTThis paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.

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Mild degradation of Powder River Basin sub-bituminous coal in environmentally benign supercritical CO2-ethanol system to produce valuable high-yield liquid tar

Applied Energy ◽

10.1016/j.apenergy.2018.05.048 ◽

2018 ◽

Vol 225 ◽

pp. 460-470 ◽

Cited By ~ 14

Author(s):

Fang-Jing Liu ◽

Khaled A.M. Gasem ◽

Mingchen Tang ◽

Alexander Goroncy ◽

Xin He ◽

...

Keyword(s):

River Basin ◽

Supercritical Co2 ◽

Bituminous Coal ◽

Powder River Basin ◽

Environmentally Benign ◽

High Yield ◽

Ethanol System

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Multi-Fold Enhancement in Compressive Properties of Polystyrene Foam Using Pre-delaminated Stearate Functionalized Layer Double Hydroxides

Polymers ◽

10.3390/polym12010008 ◽

2019 ◽

Vol 12 (1) ◽

pp. 8

Author(s):

Emmanuel O. Ogunsona ◽

Koffi L. Dagnon ◽

Nandika Anne D'Souza

Keyword(s):

Surface Area ◽

Supercritical Co2 ◽

Hydrophobic Interactions ◽

High Surface ◽

High Surface Area ◽

Bubble Nucleation ◽

Environmentally Benign ◽

Compressive Properties ◽

Layer Double Hydroxides ◽

Double Hydroxides

Developing an environmentally benign styrene foam is a critical environmental need. Supercritical CO2 use in foams has proven to be a valuable path. Adding fillers to increase bubble nucleation has been pursued concurrently. A prominent filler used is high surface area fillers, such as smectic clays. However, all studies to date show a limit of 152% in compressive moduli and 260% in the compressive stress. The values, even with such gains, limit structural application. A seminal work in 1987 by Suh and Cotton proved that carbonyl linkages in calcium carbonates and CO2 interact and impact nucleation efficiency and performance in supercritical CO2 foams. In this paper, a high surface area clay (layer double hydroxides) which begins in an exfoliated state, then functionalized with a long chain alkyl carboxylate (stearic acid) is synthesized. The result is a remarkable multi-fold improvement to the compressive properties in comparison to polystyrene (PS); a 268% and 512% increase in compressive modulus and strength, respectively. Using a pre-delaminated approach, the higher surface area was achieved in the clays. The presence of the stearate improved the interactions between the clay galleries and PS through hydrophobic-hydrophobic interactions. The glass transition temperature of the nanocomposites was observed to shift to higher values after foaming. The results point to a new path to increase performance using a pre-delaminated clay with functional groups for environmentally benign foams.

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