Low-voltage CMOS current-mode exponential circuit with 70dB output dynamic range

2013 ◽  
Vol 44 (12) ◽  
pp. 1348-1357 ◽  
Author(s):  
Cosmin Radu Popa
Keyword(s):  
Dynamic Range ◽  
Low Voltage ◽  
Current Mode

scholarly journals A low-voltage CMOS current-mode differential front-end for optical communications

2021 ◽  
Author(s):  
Bendong Sun
Keyword(s):  
Optical Communications ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Building Blocks ◽  
Switching Noise ◽  
Current Feedback ◽  
Fully Differential ◽  
Digital Circuitry

This thesis deals with the design of a low-voltage fully-differential CMOS current-mode preamplifier for optical communications. An in-depth comparative analysis of the building blocks of low-voltage CMOS current-mode circuits is carried out. Two new bandwidth enhancement techniques, namely inductor series-peaking and current feedback, are introduced and implemented in the design. The feedback also reduces the value of the series-peaking inductor. The minimum supply voltage of the amplifier is only one threshold voltage plus one pinch-off voltage. The preamplifier has a balanced differential topology such that the effect of bias dependent mismatches is minimized and the amplifier is insensitive to the switching noise caused by the digital circuitry. Negative differential current feedbacks are implemented to boost the bandwidth and increase the dynamic range.

HIGH-FREQUENCY LINEAR MULTIPLE-OUTPUT CMOS TRANSCONDUCTANCE AMPLIFIER FOR CURRENT-MODE FILTERS

2006 ◽  
Vol 15 (05) ◽  
pp. 701-717 ◽  
Author(s):  
HSIAO WEI SU ◽  
YICHUANG SUN
Keyword(s):  
High Frequency ◽  
Dynamic Range ◽  
Low Voltage ◽  
Filter Design ◽  
Current Mode ◽  
Cmos Process ◽  
Common Mode ◽  
Differential Input ◽  
Transconductance Amplifier ◽  
Linear Differential

A high-frequency highly linear tunable CMOS multiple-output operational transconductance amplifier (MO-OTA) for fully balanced current-mode OTA and capacitor (OTA-C) filters is presented. The MO-OTA is based on the cross-coupled pairs at the input and provides two pairs of differential outputs. A simple common-mode feedback (CMFB) circuit to stabilize the DC output levels of the MO-OTA is also proposed and two such CMFB circuits are used by the MO-OTA. The proposed MO-OTA is suitable for relatively low voltage (2.5 V) applications as its circuit has only two MOS transistors between the supply and ground rails. Simulated in a TSMC 0.25 μm CMOS process using PSpice, the MO-OTA has at least ± 0.3 V linear differential input signal swing with a single 2.5 V power supply and operates up to 1 GHz frequency. The MO-OTA has a THD less than -46 dB for a differential input voltage of 0.9 Vp-p at 10 MHz, dynamic range (DR) at THD = -46 dB is over 50 dB, and power consumption (with the common-mode feedback circuit) is below 8 mW for the whole tuning range. A fully balanced multiple loop feedback current-mode OTA-C filter example using the proposed MO-OTA is presented. This example also shows that the current-mode follow-the-leader-feedback (FLF) structure can achieve good performances for OTA-C filter design.

An Ultra-Low-Voltage Low-Power Current-Mode True RMS-to-DC Converter

2016 ◽  
Vol 25 (06) ◽  
pp. 1650066 ◽  
Author(s):  
Pantre Kompitaya ◽  
Khanittha Kaewdang
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
High Performance ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Current Mode ◽  
Cmos Technology ◽  
Low Supply Voltage

A current-mode CMOS true RMS-to-DC (RMS: root-mean-square) converter with very low voltage and low power is proposed in this paper. The design techniques are based on the implicit computation and translinear principle by using CMOS transistors that operate in the weak inversion region. The circuit can operate for two-quadrant input current with wide input dynamic range (0.4–500[Formula: see text]nA) with an error of less than 1%. Furthermore, its features are very low supply voltage (0.8[Formula: see text]V), very low power consumption ([Formula: see text]0.2[Formula: see text]nW) and low circuit complexity that is suitable for integrated circuits (ICs). The proposed circuit is designed using standard 0.18[Formula: see text][Formula: see text]m CMOS technology and the HSPICE simulation results show the high performance of the circuit and confirm the validity of the proposed design technique.

scholarly journals A low-voltage CMOS current-mode differential front-end for optical communications

2021 ◽  
Author(s):  
Bendong Sun
Keyword(s):  
Optical Communications ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Building Blocks ◽  
Switching Noise ◽  
Current Feedback ◽  
Fully Differential ◽  
Digital Circuitry

This thesis deals with the design of a low-voltage fully-differential CMOS current-mode preamplifier for optical communications. An in-depth comparative analysis of the building blocks of low-voltage CMOS current-mode circuits is carried out. Two new bandwidth enhancement techniques, namely inductor series-peaking and current feedback, are introduced and implemented in the design. The feedback also reduces the value of the series-peaking inductor. The minimum supply voltage of the amplifier is only one threshold voltage plus one pinch-off voltage. The preamplifier has a balanced differential topology such that the effect of bias dependent mismatches is minimized and the amplifier is insensitive to the switching noise caused by the digital circuitry. Negative differential current feedbacks are implemented to boost the bandwidth and increase the dynamic range.

scholarly journals 1.0 V-0.18 µm CMOS Tunable Low Pass Filters with 73 dB DR for On-Chip Sensing Acquisition Systems

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 563
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Dynamic Range ◽  
Low Voltage ◽  
Cutoff Frequency ◽  
Cmos Technology ◽  
Active Area ◽  
Current Steering ◽  
Low Pass ◽  
On Chip ◽  
Low Pass Filters

This paper presents a new approach based on the use of a Current Steering (CS) technique for the design of fully integrated Gm–C Low Pass Filters (LPF) with sub-Hz to kHz tunable cut-off frequencies and an enhanced power-area-dynamic range trade-off. The proposed approach has been experimentally validated by two different first-order single-ended LPFs designed in a 0.18 µm CMOS technology powered by a 1.0 V single supply: a folded-OTA based LPF and a mirrored-OTA based LPF. The first one exhibits a constant power consumption of 180 nW at 100 nA bias current with an active area of 0.00135 mm2 and a tunable cutoff frequency that spans over 4 orders of magnitude (~100 mHz–152 Hz @ CL = 50 pF) preserving dynamic figures greater than 78 dB. The second one exhibits a power consumption of 1.75 µW at 500 nA with an active area of 0.0137 mm2 and a tunable cutoff frequency that spans over 5 orders of magnitude (~80 mHz–~1.2 kHz @ CL = 50 pF) preserving a dynamic range greater than 73 dB. Compared with previously reported filters, this proposal is a competitive solution while satisfying the low-voltage low-power on-chip constraints, becoming a preferable choice for general-purpose reconfigurable front-end sensor interfaces.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

Sign in / Sign up

Export Citation Format

Share Document