Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate
2014 ◽
Vol 61
(5)
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pp. 1611-1614
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2014 ◽
Vol 14
(2)
◽
pp. 766-768
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2015 ◽
Vol 62
(9)
◽
pp. 2745-2750
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2019 ◽
Vol 9
(2)
◽
pp. 291-297
Keyword(s):
Keyword(s):
1997 ◽
Vol 12
(3)
◽
pp. 331-337
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