Elliptical nanowire FET: Modeling the short-channel subthreshold current caused by interface-trapped-charge and its evaluation for subthreshold logic gate

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106751 ◽

2021 ◽

Vol 149 ◽

pp. 106751

Author(s):

Te-Kuang Chiang

Keyword(s):

Short Channel ◽

Subthreshold Current ◽

Subthreshold Logic ◽

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Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate

Microelectronics Journal ◽

10.1016/j.mejo.2020.104893 ◽

2020 ◽

Vol 104 ◽

pp. 104893

Author(s):

Te-kuang Chiang

Keyword(s):

Current Model ◽

Subthreshold Current ◽

Subthreshold Logic ◽

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Junctionless Multiple-Gate (JLMG) MOSFETs: A Unified Subthreshold Current Model to Assess Noise Margin of Subthreshold Logic Gate

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3107817 ◽

2021 ◽

pp. 1-5

Author(s):

Te-Kuang Chiang

Keyword(s):

Current Model ◽

Subthreshold Current ◽

Noise Margin ◽

Subthreshold Logic

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A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2535247 ◽

2016 ◽

Vol 63 (5) ◽

pp. 2176-2181 ◽

Author(s):

Ying Xiao ◽

Baili Zhang ◽

Haijun Lou ◽

Lining Zhang ◽

Xinnan Lin

Keyword(s):

Compact Model ◽

Short Channel ◽

Subthreshold Current ◽

Depletion Effect ◽

Surrounding Gate

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A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure

Solid-State Electronics ◽

10.1016/j.sse.2013.02.004 ◽

2013 ◽

Vol 82 ◽

pp. 77-81 ◽

Author(s):

Xiaoshi Jin ◽

Xi Liu ◽

Hyuck-In Kwon ◽

Jung-Hee Lee ◽

Jong-Ho Lee

Keyword(s):

Current Model ◽

Double Gate ◽

Short Channel ◽

Subthreshold Current ◽

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VIA-3 measurement of interface trapped charge in short-channel MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1982.20999 ◽

1982 ◽

Vol 29 (10) ◽

pp. 1702-1702

Author(s):

T.J. Russell ◽

C.L. Wilson ◽

M. Gaitan

Keyword(s):

Short Channel ◽

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A New Interface-Trapped-Charge-Degraded Subthreshold Current Model for Quadruple-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2312936 ◽

2014 ◽

Vol 61 (5) ◽

pp. 1611-1614 ◽

Author(s):

Chiang Te-Kuang

Keyword(s):

Current Model ◽

Subthreshold Current ◽

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Low-power short-channel single-ended current-steered CMOS logic-gate for mixed-signal systems

2008 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.2008.4541911 ◽

2008 ◽

Author(s):

Ajay Taparia ◽

T.R. Viswanathan

Keyword(s):

Low Power ◽

Short Channel ◽

Mixed Signal ◽

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New Analytical Model for Subthreshold Current in Short-Channel Fully-Depleted SOI MOSFETs

10.7567/ssdm.1997.b-4-3 ◽

1997 ◽

Author(s):

Sergey Pidin ◽

Mitsumasa Koyanagi

Keyword(s):

Analytical Model ◽

Short Channel ◽

Fully Depleted ◽

Subthreshold Current

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Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs

Journal of Computational Electronics ◽

10.1007/s10825-014-0557-0 ◽

2014 ◽

Vol 13 (2) ◽

pp. 467-476 ◽

Author(s):

Gopi Krishna Saramekala ◽

Abirmoya Santra ◽

Mirgender Kumar ◽

Sarvesh Dubey ◽

Satyabrata Jit ◽

...

Keyword(s):

Subthreshold Swing ◽

Short Channel ◽

Fully Depleted ◽

Subthreshold Current ◽

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A Compact Interface-Trapped-Charge-Induced Subthreshold Current Model for Surrounding-Gate MOSFETs

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2014.2308913 ◽

2014 ◽

Vol 14 (2) ◽

pp. 766-768 ◽

Keyword(s):

Current Model ◽

Subthreshold Current ◽

Surrounding Gate ◽

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