Magnetic Field Imaging for non destructive 3D IC testing

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

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Magnetic Field Imaging for Non-Destructive 3D Package Fault Isolation

International Symposium on Microelectronics ◽

10.4071/isom-wp21 ◽

2014 ◽

Vol 2014 (1) ◽

pp. 000635-000640

Author(s):

Jan Gaudestad ◽

David Vallett

Keyword(s):

Magnetic Field ◽

Product Life Cycle ◽

Fault Isolation ◽

Product Returns ◽

Magnetic Field Imaging ◽

The One ◽

In The Beginning ◽

3D Package ◽

Non Destructive ◽

Field Imaging

While microelectronic packages are becoming more and more advanced, the need for non-destructive Electrical Fault Isolation (EFI) becomes ever more critical for the entire product life-cycle ranging from the chip development yield enhancements to failures on product returns. In the beginning of product development, short failures are often the main issue while opens and cracks become the reliability problems after the product reaches the marketplace. In this paper we present Magnetic Field Imaging (MFI) as the one technique that can find all static defects: shorts, leakages and opens in a true non-destructive way.

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3D Magnetic Field Imaging for Non-Destructive Fault Isolation

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0189 ◽

2013 ◽

Author(s):

A. Orozco ◽

J. Gaudestad ◽

N.E. Gagliolo ◽

C. Rowlett ◽

E. Wong ◽

...

Keyword(s):

Magnetic Field ◽

Semiconductor Industry ◽

Fault Isolation ◽

Wafer Level ◽

Moore’S Law ◽

Moore's Law ◽

Magnetic Field Imaging ◽

Silicon Vias ◽

Non Destructive ◽

Field Imaging

Abstract While transistor gate lengths may continue to shrink for some time, the semiconductor industry faces increasing difficulties to satisfy Moore’s Law. One solution to satisfying Moore’s Law in the future is to stack transistors in a 3-dimensional (3D) formation. In addition, the need for expanding functionality, real-estate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques. We describe in this paper innovations in Magnetic Field Imaging for FI which have the potential to allow 3D characterization of currents for non-destructive fault isolation at every chip level in a 3D stack.

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Non-destructive visualization of short circuits in lithium-ion batteries by a magnetic field imaging system

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abf4a1 ◽

2021 ◽

Vol 60 (5) ◽

pp. 056502

Author(s):

Shogo Suzuki ◽

Hideaki Okada ◽

Kai Yabumoto ◽

Seiju Matsuda ◽

Yuki Mima ◽

...

Keyword(s):

Magnetic Field ◽

Lithium Ion Batteries ◽

Imaging System ◽

Lithium Ion ◽

Magnetic Field Imaging ◽

Short Circuits ◽

Non Destructive ◽

Field Imaging

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Magnetic Field Imaging on Stacked Flash Memories by Laser Probing and SQUID Scanning

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0495 ◽

2017 ◽

Author(s):

K. Sanchez ◽

G. Bascoul ◽

F. Infante ◽

N. Courjault ◽

T. Nakamura

Keyword(s):

Magnetic Field ◽

Failure Analysis ◽

Two Dimensions ◽

Analysis Tool ◽

Active Device ◽

Current Path ◽

3D Packaging ◽

Magnetic Field Imaging ◽

The Magnetic Field ◽

Field Imaging

Abstract Magnetic field imaging is a well-known technique which gives the possibility to study the internal activity of electronic components in a contactless and non-invasive way. Additional data processing can convert the magnetic field image into a current path and give the possibility to identify current flow anomalies in electronic devices. This technique can be applied at board level or device level and is particularly suitable for the failure analysis of complex packages (stacked device & 3D packaging). This approach can be combined with thermal imaging, X-ray observation and other failure analysis tool. This paper will present two different techniques which give the possibility to measure the magnetic field in two dimensions over an active device. Same device and same level of current is used for the two techniques to give the possibility to compare the performance.

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