Magnetic Field Imaging on Stacked Flash Memories by Laser Probing and SQUID Scanning

Author(s):  
K. Sanchez ◽  
G. Bascoul ◽  
F. Infante ◽  
N. Courjault ◽  
T. Nakamura

Abstract Magnetic field imaging is a well-known technique which gives the possibility to study the internal activity of electronic components in a contactless and non-invasive way. Additional data processing can convert the magnetic field image into a current path and give the possibility to identify current flow anomalies in electronic devices. This technique can be applied at board level or device level and is particularly suitable for the failure analysis of complex packages (stacked device & 3D packaging). This approach can be combined with thermal imaging, X-ray observation and other failure analysis tool. This paper will present two different techniques which give the possibility to measure the magnetic field in two dimensions over an active device. Same device and same level of current is used for the two techniques to give the possibility to compare the performance.

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001937-001965
Author(s):  
Jan Gaudestad ◽  
Antonio Orozco

The challenges that 3D integration present to Failure Analysis require the development of new Fault Isolation techniques that allows for non-destructive, true 3D failure localization. By injecting a current in the device under test (DUT), the current generates a magnetic field around it and this magnetic field is detected by a sensor above the device. Magnetic field imaging (MFI) is a natural candidate for 3D Fault Isolation of complex 3D interconnected devices. This is because the magnetic field generated by the currents in the DUT passes unaffected through all materials used in device fabrication; the presence of multiple metal layers, dies or other opaque layers do not have any impact on the magnetic field signal. The limitations of the technique are not affected by the number of layers in the stacked devise in samples such as wirebonded stacked memory, Through Silicon Via (TSV) stacked die or even package on package (PoP). The sample is raster scanned and magnetic field is acquired at determined steps providing a magnetic image of the field distribution. This magnetic field data is typically processed using a standard inversion technique to obtain a current density map of the device. The resulting current map can then be compared to a circuit diagram, an optical or infrared image, or a non-failing part to determine the fault location. Today, giant-magnetoresistive (GMR) sensors have been added to the Superconducting Quantum Interference Device (SQUID) sensor to allow higher resolution and Fault Isolation (FI) I at die level. Magnetic Field Imaging (MFI), using SQUID as the high sensitive magnetic sensor in combination with a high resolution GMR sensor. A solver algorithm capable of successfully reconstructing a 3D current path based on an acquired magnetic field image from both sensors has been developed. The generic 3D inverse problem has no unique solution. Given a particular 3D magnetic field distribution, there are an infinite number of current path distributions that will result in such magnetic field. This ill-posed problem has restricted, so far, the use of magnetic imaging to 2D. A different kind of 3D solver can be constructed, nevertheless capable of obtaining a single solution. The 3D solver algorithm is not only capable of extracting the 3D current path, but it also provides valuable geometrical information about the device. Accurately being able to position each current segment in a layer allows the FA engineer to follow the current as it vertically moves from one die (or layer) to another. [1,2,3]


2018 ◽  
Author(s):  
Antonio Orozco ◽  
Elena Talanova ◽  
Alex Jeffers ◽  
Florencia Rusli ◽  
Bernice Zee ◽  
...  

Abstract Industry and market requirements keep imposing demands in terms of tighter transistor packing, die and component real estate management on the package, faster connections and expanding functionality. This has forced the semiconductor industry to look for novel packaging approaches to allow for 3D stacking of transistors (the so called “More than Moore”). This complex 3D geometry, with an abundance of opaque layers and interconnects, presents a great challenge for failure analysis (FA). Three-dimensional (3D) magnetic field imaging (MFI) has proven to be a natural, useful technique for non-destructively mapping 3D current paths in devices that allows for submicron vertical resolution. 3D X-ray microscopy (XRM) enables 3D tomographic imaging of advanced IC packages without the need to destroy the device. This is because it employs both geometric and optical image magnifications to achieve high spatial resolution. In this paper, we propose a fully nondestructive, 3D-capable workflow for FA comprising 3D MFI and 3D XRM. We present an application of this novel workflow to 3D defect localization in a complex 2.5D device combining high bandwidth memory (HBM) devices and an application specific integrated circuit (ASIC) unit on a Si interposer with a signal pin electrical short failure.


Author(s):  
L. A. Knauss ◽  
B. M. Frazier ◽  
A. B. Cawthorne ◽  
E. Budiarto ◽  
R. Crandall ◽  
...  

Abstract With the arrival of flip-chip packaging, present tools and techniques are having increasing difficulty meeting failure-analysis needs. Recently a magneticfield imaging system has been used to localize shorts in buried layers of both packages and dies. Until now, these shorts have been powered directly through simple connections at the package. Power shorts are examples of direct shorts that can be powered through connections to Vdd and Vss at the package level. While power shorts are common types of failure, equally important are defects such as logic shorts, which cannot be powered through simple package connections. These defects must be indirectly activated by driving the part through a set of vectors. This makes the magnetic-field imaging process more complicated due to the large background currents present along with the defect current. Magnetic-field imaging is made possible through the use of a SQUID (Superconducting Quantum Interference Device), which is a very sensitive magnetic sensor that can image magnetic fields generated by magnetic materials or currents (such as those in an integrated circuit). The current-density distribution in the sample can then be calculated from the magnetic-field image revealing the locations of shorts and other current anomalies. Presented here is the application of a SQUID-based magnetic-field imaging system for isolation of indirect shorts. This system has been used to investigate shorts in two flip-chip-packaged SRAMs. Defect currents as small as 38 μA were imaged in a background of 1 A. The measurements were made using a lock-in thechnique and image subtraction. The magnetic-field image from one sample is compared with the results from a corresponding infrared-microscope image.


2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Wenping Yue ◽  
Mingyang Yang

Purpose The results showed that the use of a magnetic marker could relatively accurately reflect the fracture pattern inside the rock-like material (RLM). Design/methodology/approach This study investigated the internal structure and fracture pattern of a fractured RLM. Magnetized iron oxide powder, which was used as a magnetic marker, was mixed with water and glue to form a magnetic slurry, which was subsequently injected into a fractured RLM. After the magnetic slurry completely filled the cracks inside the RLM and became cemented, the distribution and magnitude of the magnetic field inside the RLM were determined using a three-dimensional (3D) magnetic field imaging system. Findings A model for determining the magnetic field strength was developed using MATLAB. Originality/value This model of 3D magnetic will further be used as a finite element tool to simulate and image cracks inside the rock.


2021 ◽  
Vol 11 (17) ◽  
pp. 8148
Author(s):  
Yuan Chen ◽  
Ping Lai ◽  
Hong-Zhong Huang ◽  
Peng Zhang ◽  
Xiaoling Lin

With the development of 3D integrated packaging technology, failure analysis is facing more and more challenges. Defect localization in a 3D package is a key step of failure analysis. The complex structure and materials of 3D package devices demand non-destructive defect localization technology for full packages. Magnetic field imaging and three-dimensional X-ray technology are not affected by package material or form. They are effective methods to realize defect localization on 3D packages. In this paper, magnetic field imaging and high-resolution three-dimensional X-ray microscopy were used to localize the open defect in a 3D package with a TSV daisy chain. A two-probe RF method in magnetic field imaging was performed to resolve isolation of the defect difficulties resulting from many different branches of TSV daisy chains. Additionally, a linear decay method was used to target sub-micron resolution at a long working distance. Multiple partition scans from a high-resolution 3D X-ray microscopy with a two-stage magnification structure were used to achieve sub-micron resolution. The open location identified by magnetic field imaging was consistent with that identified by a three-dimensional X-ray microscope. The opening was located on the top metal in the proximity of the fifth via. Physical failure analysis revealed the presence of a crack in the top metal at the opening location.


Author(s):  
Way-Jam Chen ◽  
Lily Shiau ◽  
Ming-Ching Huang ◽  
Chia-Hsing Chao

Abstract In this study we have investigated the magnetic field associated with a current flowing in a circuit using Magnetic Force Microscopy (MFM). The technique is able to identify the magnetic field associated with a current flow and has potential for failure analysis.


Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.


2021 ◽  
Vol 92 (3) ◽  
pp. 035113
Author(s):  
Huan Liu ◽  
Changfeng Zhao ◽  
Xiaobin Wang ◽  
Zehua Wang ◽  
Jian Ge ◽  
...  

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