Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment

2018 ◽  
Vol 88-90 ◽  
pp. 969-973
Author(s):  
B. Li ◽  
Y. Huang ◽  
J. Wu ◽  
Y. Huang ◽  
B. Li ◽  
...  
Keyword(s):  
Constant Voltage ◽  
Total Ionizing Dose ◽  
Voltage Stress ◽  
Dose Experiment

scholarly journals Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

2014 ◽  
Vol 14 (5) ◽  
pp. 543-548 ◽  
Author(s):  
Ho-Young Kwak ◽  
Sung-Kyu Kwon ◽  
Hyuk-Min Kwon ◽  
Seung-Yong Sung ◽  
Su Lim ◽  
...  
Keyword(s):  
Dielectric Relaxation ◽  
Constant Voltage ◽  
High K ◽  
Voltage Stress

Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1895-1900 ◽  
Author(s):  
Philippe Chiquet ◽  
Pascal Masson ◽  
Romain Laffont ◽  
Gilles Micolau ◽  
Jérémy Postel-Pellerin ◽  
...  
Keyword(s):  
Dynamic Measurement ◽  
Constant Voltage ◽  
Voltage Stress

Behavior of Local Charge-Trapping Sites in La2O3–Al2O3Composite Films under Constant Voltage Stress

2007 ◽  
Vol 46 (4B) ◽  
pp. 1879-1884 ◽  
Author(s):  
Toshifumi Sago ◽  
Akiyoshi Seko ◽  
Mitsuo Sakashita ◽  
Akira Sakai ◽  
Masaki Ogawa ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Constant Voltage ◽  
Local Charge ◽  
Voltage Stress ◽  
Trapping Sites

Characteristic Instabilities in HfAlO Metal–Insulator–Metal Capacitors Under Constant-Voltage Stress

2008 ◽  
Vol 55 (6) ◽  
pp. 1359-1365 ◽  
Author(s):  
Kenichi Takeda ◽  
Renichi Yamada ◽  
Toshinori Imai ◽  
Tsuyoshi Fujiwara ◽  
Takashi Hashimoto ◽  
...  
Keyword(s):  
Constant Voltage ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Voltage Stress

Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO2 and High-k Dielectrics

2010 ◽  
Vol 1252 ◽  
Author(s):  
Sahar Sahhaf ◽  
Robin Degraeve ◽  
Mohammed Zahid ◽  
Guido Groeseneken
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Charge Injection ◽  
Constant Voltage ◽  
High K ◽  
Voltage Stress ◽  
Stress Induced Leakage Current ◽  
High K Dielectric

AbstractIn this work, the effect of elevated temperature on the generated defects with constant voltage stress (CVS) in SiO2 and SiO2/HfSiO stacks is investigated. Applying Trap Spectroscopy by Charge Injection and Sensing (TSCIS) to 6.5 nm SiO2 layers, different kinds of generated traps are profiled at low and high temperature. Also the Stress-Induced Leakage Current (SILC) spectrum of high-k dielectric stack is different at elevated temperature indicating that degradation and breakdown at high temperature is not equivalent to that at low temperature and therefore, extrapolation of data from high to low T or vice versa is challenging.

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