Stability and Degradation Mechanism of La2O3 Metal-Insulator-Metal Capacitors under Constant Voltage Stress

2010 ◽  
Keyword(s):  
Degradation Mechanism ◽  
Constant Voltage ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Voltage Stress

Characteristic Instabilities in HfAlO Metal–Insulator–Metal Capacitors Under Constant-Voltage Stress

2008 ◽  
Vol 55 (6) ◽  
pp. 1359-1365 ◽  
Author(s):  
Kenichi Takeda ◽  
Renichi Yamada ◽  
Toshinori Imai ◽  
Tsuyoshi Fujiwara ◽  
Takashi Hashimoto ◽  
...  
Keyword(s):  
Constant Voltage ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Voltage Stress

scholarly journals The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Jingyu Shen ◽  
Can Tan ◽  
Rui Jiang ◽  
Wei Li ◽  
Xue Fan ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Carrier Injection ◽  
Constant Voltage ◽  
Mos Capacitors ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Voltage Stress ◽  
Thin Gate Oxide

The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB) of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig) of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N) tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd) under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Polarity dependence degradation mechanism of Al2O3 based metal-insulator-metal antifuse

2018 ◽  
Vol 124 (24) ◽  
pp. 244104 ◽  
Author(s):  
Min Tian ◽  
Huicai Zhong ◽  
Li Li ◽  
Zhigang Wang
Keyword(s):  
Degradation Mechanism ◽  
Metal Insulator ◽  
Metal Insulator Metal

Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

2011 ◽  
Author(s):  
Terrance O'Regan ◽  
Matthew Chin ◽  
Cheng Tan ◽  
Anthony Birdwell
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Hyperspectral Molecular Orientation Mapping in Metamaterials

2021 ◽  
Vol 11 (4) ◽  
pp. 1544
Author(s):  
Meguya Ryu ◽  
Yoshiaki Nishijima ◽  
Shinya Morimoto ◽  
Naoki To ◽  
Tomoki Hashizume ◽  
...  
Keyword(s):  
Molecular Orientation ◽  
Field Enhancement ◽  
Chemical Mapping ◽  
Metal Insulator ◽  
Orientation Mapping ◽  
Metal Insulator Metal ◽  
Finger Printing ◽  
Thermal Emitter ◽  
Ir Bands ◽  
Sub Wavelength

The four polarisation method is adopted for measurement of molecular orientation in dielectric nanolayers of metal-insulator-metal (MIM) metamaterials composed of gold nanodisks on polyimide and gold films. Hyperspectral mapping at the chemical finger printing spectral range of 4–20 μμm was carried out for MIM patterns of 1–2.5 μμm period (sub-wavelength). Overlay images taken at 0,π4,π2,3π4 orientation angles and subsequent baseline compensation are shown to be critically important for the interpretation of chemical mapping results and reduction of spurious artefacts. Light field enhancement in the 60-nm-thick polyimide (I in MIM) was responsible for strong absorption at the characteristic polyimide bands. Strong absorbance A at narrow IR bands can be used as a thermal emitter (emittance E=1−R), where R is the reflectance and A=1−R−T, where for optically thick samples the transmittance is T=0.

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