Developed non-destructive verification methods for accelerated temperature cycling of power MOSFETs

2022 ◽  
Vol 128 ◽  
pp. 114442
Author(s):  
You-Cheol Jang ◽  
Hyo Eun Kim ◽  
Ariadna Schuck ◽  
Yong-Sang Kim
Keyword(s):  
Temperature Cycling ◽  
Power Mosfets ◽  
Verification Methods ◽  
Non Destructive

Failure analysis of epoxy molded IC packages

2016 ◽  
Vol 33 (2) ◽  
pp. 94-101
Author(s):  
Kamil Janeczek ◽  
Aneta Arazna ◽  
Konrad Futera ◽  
Grazyna Koziol
Keyword(s):  
Failure Analysis ◽  
Sulphuric Acid ◽  
Electronic Devices ◽  
Mechanical Grinding ◽  
Content Type ◽  
Power Mosfets ◽  
X Ray ◽  
Non Destructive ◽  
Practical Implications ◽  
Graphic Software

Purpose The aim of this paper is to present non-destructive and destructive methods of failure analysis of epoxy moulded IC packages on the example of power MOSFETs in SOT-227 package. Design/methodology/approach A power MOSFET in SOT-227 package was examined twice using X-ray inspection, at first as the whole component to check if it is damaged and then after removing the upper part of package by mechanical grinding. The purpose of the second X-ray inspection was to prepare images for estimation of the total number and approximate location of voids in soft solder layers. Finally, power MOSFETs were subjected to decapsulation process using a concentrated sulphuric acid to verify existence of damage areas noticed during X-ray analysis and to observe other possible failures such as cracks in aluminium metallization or wires deformation. Findings X-ray analysis was revealed to be adequate technique to detect damage (e.g. meltings) in power MOSFETs in SOT-227 package, but only when tested components were analysed in the side view. This type of analysis combined with a graphic software is also suitable for voids estimation in soft solder layers. Moreover, it was found that a single acid (concentrated sulphuric acid) at elevated temperature can be successfully used for decapsulation of power MOSFETs in SOT-227 package without damage of aluminium metallization and aluminium wires. Such decapsulation process enables analysis of defects in wire, die and package materials. Research limitations/implications Further investigations are required to examine if the presented methods of failures analysis can be used for other types of components (e.g. high power resistors) in similar packages. Practical/implications The described methods of failure analysis can find application in electronic industry to select components which are free of damage and in effect which allow to produce high reliable devices. Apart from it, the presented method is applicable to evaluate reasons of improper work of tested electronic devices and to identify faked components. Originality/value This paper contains valuable information for research and technical staff involved in the assessment of electronic devices who needs practical methods of failure analysis of epoxy moulded IC packages.

Application to Non Destructive Physical Analysis Method Using X-ray CT Imaging

2010 ◽  
Author(s):  
Akira Mizoguchi ◽  
Minoru Sugawara ◽  
Masahide Nakamura ◽  
Koichiro Takeuchi
Keyword(s):  
Failure Analysis ◽  
Three Dimensional ◽  
Ct Imaging ◽  
Temperature Cycling ◽  
Physical Analysis ◽  
Printed Wiring Boards ◽  
X Ray ◽  
X Ray Imaging ◽  
X Ray Computed ◽  
Non Destructive

Abstract We have been paying attention to the development of the nondestructive physical analysis (NDPA) technology. We think that NDPA is a technology which doesn't depend on the worker's capability or experience. There are many NDPA techniques, and analysis using X-ray imaging is one of the principal techniques. Due to the progress of the image analysis using computers in recent years, X-ray imaging have been evolving from two dimensional images to three dimensional imaging. We have been applying X-ray CT imaging to actual failure analysis and reliability evaluation since 2008. At ISTFA 2009, we reported on the effectiveness of X-ray Computed Tomography (CT) images in the failure analysis. [1] We confirmed that the X-ray CT image had various applications, for example, screening for counterfeit parts, the detection of the defect of the multi-layers printed wiring boards (multi-layers PWB), the structure confirmation of caulking contacts, and the detection of cracks or voids of the solder joint. This paper discusses the effectiveness of X-ray CT imaging in failure analysis and discusses the effectiveness of applying X-ray CT imaging to the propagation of cracks occurring at solder joints during temperature cycling test.

New method for non destructive snap-back characterization in multi-finger power MOSFETs

2008 ◽  
Author(s):  
Francois Dieudonne ◽  
Aurore Constant ◽  
Julien Rosa ◽  
Benoit Gautheron ◽  
Jean-Francois Revel
Keyword(s):  
New Method ◽  
Power Mosfets ◽  
Non Destructive

scholarly journals Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

2017 ◽  
Vol 76-77 ◽  
pp. 500-506 ◽  
Author(s):  
F. Boige ◽  
F. Richardeau ◽  
D. Trémouilles ◽  
S. Lefebvre ◽  
G. Guibaud
Keyword(s):  
Short Circuit ◽  
Power Mosfets ◽  
Non Destructive

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Forensic Identifications Aided by Scanning Electron Microscopy of Silicone-Epoxy Microreplicas of Calcified and Cornified Structures

1975 ◽  
Vol 33 ◽  
pp. 678-679 ◽  
Author(s):  
R.F. Sognnaes
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Forensic Science ◽  
George Washington ◽  
Epithelial Surface ◽  
Extended Application ◽  
Tissue Surfaces ◽  
Non Destructive ◽  
Scanning Electron ◽  
Surface Changes

Sufficient experience has been gained during the past five years to suggest an extended application of microreplication and scanning electron microscopy to problems of forensic science. The author's research was originally initiated with a view to develop a non-destructive method for identification of materials that went into objects of art, notably ivory and ivories. This was followed by a very specific application to the identification and duplication of the kinds of materials from animal teeth and tusks which two centuries ago went into the fabrication of the ivory dentures of George Washington. Subsequently it became apparent that a similar method of microreplication and SEM examination offered promise for a whole series of problems pertinent to art, technology and science. Furthermore, what began primarily as an application to solid substances has turned out to be similarly applicable to soft tissue surfaces such as mucous membranes and skin, even in cases of acute, chronic and precancerous epithelial surface changes, and to post-mortem identification of specific structures pertinent to forensic science.

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