scholarly journals Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering

2019 ◽  
Vol 2 ◽  
pp. 48-52 ◽  
Author(s):  
S. Fareed ◽  
Arifa Jamil ◽  
N. Tiwari ◽  
M.A. Rafiq
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Visible Light ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Zno Thin Films ◽  
Light Detection ◽  
Cr Doping

High mobility ReSe2 field effect transistors: Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration

2D Materials ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 015010 ◽  
Author(s):  
Muhammad Farooq Khan ◽  
Shania Rehman ◽  
Imtisal Akhtar ◽  
Sikandar Aftab ◽  
Hafiz Muhammad Salman Ajmal ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Light Detection

scholarly journals Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2678
Author(s):  
Philipp Wendel ◽  
Dominik Dietz ◽  
Jonas Deuermeier ◽  
Andreas Klein
Keyword(s):  
Magnetron Sputtering ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Oxygen Vacancies ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Hysteresis Behavior ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films

2018 ◽  
Author(s):  
Michael Vecchio ◽  
Amira Barhoumi Meddeb ◽  
Zoubeida Ounaies ◽  
Michael T. Lanagan ◽  
Jeff Shallenberger
Keyword(s):  
Thin Films ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

scholarly journals The Influence of the Schottky Barrier at the Metal/PbS NCs Junction on the Charge Transport Properties-=SUP=-*-=/SUP=-

2020 ◽  
Vol 128 (8) ◽  
pp. 1194
Author(s):  
D.A. Onishchuk ◽  
P.S. Parfenov ◽  
A. Dubavik ◽  
A.P. Litvin
Keyword(s):  
Thin Films ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Silver Oxide ◽  
Semiconductor Nanocrystals ◽  
Charge Carriers ◽  
Charge Accumulation ◽  
Pbs Nanocrystals ◽  
Film Interface

The effect of the Schottky barrier height changes on the metal/EDT-treated (1,2-ethanedithiol) PbS nanocrystals film interface is considered. Also, the influence of shunts on the J-V characteristic and the Schottky barrier height is demonstrated, as well, the effect of silver oxide layer on the charge accumulation and tunneling. It is shown that the gold electrodes provide more stable results even when the Schottky barrier is formed, while the silver electrode provides more current. Keywords: semiconductor nanocrystals, Schottky barrier, charge carriers transport, thin films.

A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

2020 ◽  
Vol 8 (18) ◽  
pp. 9085-9090 ◽  
Author(s):  
Lin-An Cao ◽  
Ming-Shui Yao ◽  
Hui-Jie Jiang ◽  
Susumu Kitagawa ◽  
Xiao-Liang Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Gas Detection ◽  
High Quality ◽  
Self Powered

High-quality EC-MOF thin films are used to modulate the Schottky barrier height and detect light/gas by self-powered mode.

The Electronic Characteristics of IrSi Thin Films

2005 ◽  
Vol 475-479 ◽  
pp. 3363-3366
Author(s):  
Xi Ying Ma
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Measurement Temperature

The Schottky barrier height (SBH) of IrSi nanometer thin films prepared by pulsed laser deposition at room temperature and annealed at 600 °C has been studied. The SBH of the sample is deduced from C-V and I-V data. These SBHs decrease with increasing measurement temperature.

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