Thickness dependent physical properties of chemically deposited nanocrystalline MgSe thin films deposited at room temperature by solution growth method

Antiperovskite CuNFe3 (CNF) thin films have been successfully prepared by chemical solution deposition (CSD) for the first time. They are versatile in many applications as an iron-based nitride. The preparation of pure CNF thin films is a challenging work for the complexity of the phase diagram. Herein, the CNF thin films are phase-pure and polycrystalline. Annealing temperature effects on the microstructures and physical properties were investigated, showing that the CNF thin films are metallic and can be considered as a candidate for room temperature soft-magnets with a large saturated magnetization (Ms) and a low coercive field (Hc). At high temperatures, the electrical transport behavior of CNF thin films presents a low temperature coefficient of resistivity (TCR) value, while the electron–electron interaction is prominent at low temperatures. The reported solution methods of CNF thin films will enable extensive fundamental investigation of the microstructures and properties as well as provide an effective route to prepare other antiperovskite transition-metal nitride thin films.

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Physical properties of spinel iron oxide thin films

Journal of Materials Research ◽

10.1557/jmr.1988.0344 ◽

1988 ◽

Vol 3 (2) ◽

pp. 344-350 ◽

Cited By ~ 24

Author(s):

C. Ortiz ◽

G. Lim ◽

M. M. Chen ◽

G. Castillo

Keyword(s):

Thin Film ◽

Thin Films ◽

Grain Size ◽

Physical Properties ◽

Room Temperature ◽

Lattice Parameter ◽

Infrared Transmission ◽

Transmission Properties ◽

Annealing Conditions ◽

Deposition Conditions

This paper describes the complexity of the spinel iron oxides in thin-film configuration. First, the experimental deposition conditions are determined for the parameters of substrate temperature and oxygen flow such that only the “Fe3O4” phase is formed. Then a study is made of how the structural (grain size, lattice parameter, texture), magnetic (M), and optical (visible and infrared transmission) properties of the films depend on the deposition and postdeposition (air annealing) conditions. The experimental deposition region is defined where the films have the most similar physical properties to bulk Fe3O4 and subsequently, after annealing, to bulk gamma Fe2O3. Finally, a discussion is presented of a model that accounts for the anomalous, low values of the magnetic moment for the samples deposited at room temperature. The model proposes an overpopulation of the iron tetrahedral A sites.

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Synthesis of nanostructured CuxS thin films by chemical route at room temperature and investigation of their size dependent physical properties

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2011.07.009 ◽

2011 ◽

Vol 509 (37) ◽

pp. 9249-9254 ◽

Cited By ~ 19

Author(s):

A.U. Ubale ◽

D.M. Choudhari ◽

J.S. Kantale ◽

V.N. Mitkari ◽

M.S. Nikam ◽

...

Keyword(s):

Thin Films ◽

Physical Properties ◽

Room Temperature ◽

Chemical Route ◽

Size Dependent

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Physical properties of reactive RF sputtered a-IZON thin films.

Revista Mexicana de Física ◽

10.31349/revmexfis.65.133 ◽

2019 ◽

Vol 65 (2) ◽

pp. 133

Author(s):

J. J. Ortega ◽

C. R. Escobedo-Galván ◽

F. Avelar-Muñoz ◽

A. A. Ortiz-Hernández ◽

H. Tototzintle-Huitle ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Physical Properties ◽

Room Temperature ◽

Amorphous Material ◽

Optoelectronic Devices ◽

Rf Magnetron Sputtering ◽

High Transparency ◽

Reactive Rf Magnetron Sputtering ◽

Incorporated Nitrogen

The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10-3 Ω∙cm to 10-4 Ω∙cm, while the carrier concentration showed values over 1020 cm-3 with mobility between 10 and 21 cm2⸱V-1⸱s-1. The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.

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