scholarly journals Synthesis and Physical Properties of Antiperovskite CuNFe3 Thin Films via Solution Processing for Room Temperature Soft-Magnets

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 270
Author(s):  
Zhenzhen Hui ◽  
Qi Zhu ◽  
Chuan Liu ◽  
Jumeng Wei ◽  
Jing Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Electrical Transport ◽  
Room Temperature ◽  
Electron Interaction ◽  
Solution Deposition ◽  
Soft Magnets ◽  
Solution Methods ◽  
Temperature Coefficient Of Resistivity ◽  
First Time

Antiperovskite CuNFe3 (CNF) thin films have been successfully prepared by chemical solution deposition (CSD) for the first time. They are versatile in many applications as an iron-based nitride. The preparation of pure CNF thin films is a challenging work for the complexity of the phase diagram. Herein, the CNF thin films are phase-pure and polycrystalline. Annealing temperature effects on the microstructures and physical properties were investigated, showing that the CNF thin films are metallic and can be considered as a candidate for room temperature soft-magnets with a large saturated magnetization (Ms) and a low coercive field (Hc). At high temperatures, the electrical transport behavior of CNF thin films presents a low temperature coefficient of resistivity (TCR) value, while the electron–electron interaction is prominent at low temperatures. The reported solution methods of CNF thin films will enable extensive fundamental investigation of the microstructures and properties as well as provide an effective route to prepare other antiperovskite transition-metal nitride thin films.

Transport Properties of Granular Nix(SiO2)100−x Thin Films

1990 ◽  
Vol 195 ◽  
Author(s):  
John R. Beamish ◽  
B.M. Patterson ◽  
K.M. Unruh
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Room Temperature ◽  
Volume Percent ◽  
Ni Content ◽  
Resistivity Minimum ◽  
Temperature Coefficient Of Resistivity ◽  
Sputter Deposited

ABSTRACTWe have studied the electrical transport behavior of sputter deposited Nix(SiO2)100−x thin films between room temperature and 100 mK and, at selected temperatures, in applied magnetic fields up to 6 T. As the Ni concentration x is reduced, the resistivity increases systematically. At a Ni concentration (nominal) of about x–70 atomic percent (38 volume percent) the room temperature coefficient of resistivity changes sign. For Ni concentrations greater than 70 percent the resistance first decreases with temperature then increases logarithmically at, low temperatures. This increase becomes smaller and the resistivity minimum moves to progressively lower temperatures as the Ni concentration increases. In films with less than x–70 percent Ni, the resistivity has a temperature dependence of the form ρ(T)–ρo exp \(To/T)α] between room temperature and about 5 K. The exponent a is about 1/2 and To increases with decreasing Ni content. Below 1 K, however, the resistivity increases much less rapidly, with a temperature dependence independent of Ni concentration. In all films the magnetoresistance is small and negative.

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

2020 ◽  
Vol 8 (2) ◽  
pp. 536-542 ◽  
Author(s):  
Yuanqi Huang ◽  
Ang Gao ◽  
Daoyou Guo ◽  
Xia Lu ◽  
Xiao Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Moment ◽  
Room Temperature ◽  
Fe Doping ◽  
Saturation Magnetic Moment ◽  
First Time

A thermostable Fe-doped γ-Ga2O3 thin film with a high room temperature saturation magnetic moment of 5.73 μB/Fe has been obtained for the first time.

Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

2004 ◽  
Vol 813 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hydrogen Treatment ◽  
Narrow Gap ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Before And After ◽  
First Time

ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

Smart Heterostructures Based on Solid Solution ZnCdHgTe

2003 ◽  
Vol 785 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit ◽  
Macej Oszwaldowsky
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Spectral Range ◽  
Room Temperature ◽  
Signal Frequency ◽  
Applied Bias ◽  
Current Voltage ◽  
Wide Range ◽  
Capacitance Voltage ◽  
First Time

ABSTRACTCurrent – voltage (IVC) and capacitance – voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films ZnxCdyHg1-x-yTe were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 μm. Electric characteristics of the as-grown structures were examined under T = 77–290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50–0.65 μm.

Synthesis and Properties of Nd-Substituted Bismuth Titanate Polycrystalline Thin Films with a-/b-Axes Orientation

2006 ◽  
Vol 301 ◽  
pp. 57-60 ◽  
Author(s):  
Masahiro Kurachi ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Hiroshi Uchida ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Fair Value ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Polycrystalline Thin Films ◽  
Treatment Conditions ◽  
Low Leakage Current

Nd-substituted Bi4Ti3O12 (BNT) polycrystalline thin films with preferred a-/b-axes orientations were grown on sputter-grown IrO2(101) layers by chemical solution deposition method. After optimizing the heat treatment conditions, insulating characters and ferroelectric properties in 250-nm-thick BNT thin films with a-/b-axes orientations were investigated at room temperature. Low leakage current density of J=10-7~10-8 A/cm2 at 100 kV/cm and fair value of remnant polarization (2Pr=31 μC/cm2 at 400 kV/cm) were measured even though the Bi2O2 blocking layer aligned parallel to the film normal.

Physical properties of spinel iron oxide thin films

1988 ◽  
Vol 3 (2) ◽  
pp. 344-350 ◽  
Author(s):  
C. Ortiz ◽  
G. Lim ◽  
M. M. Chen ◽  
G. Castillo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Physical Properties ◽  
Room Temperature ◽  
Lattice Parameter ◽  
Infrared Transmission ◽  
Transmission Properties ◽  
Annealing Conditions ◽  
Deposition Conditions

This paper describes the complexity of the spinel iron oxides in thin-film configuration. First, the experimental deposition conditions are determined for the parameters of substrate temperature and oxygen flow such that only the “Fe3O4” phase is formed. Then a study is made of how the structural (grain size, lattice parameter, texture), magnetic (M), and optical (visible and infrared transmission) properties of the films depend on the deposition and postdeposition (air annealing) conditions. The experimental deposition region is defined where the films have the most similar physical properties to bulk Fe3O4 and subsequently, after annealing, to bulk gamma Fe2O3. Finally, a discussion is presented of a model that accounts for the anomalous, low values of the magnetic moment for the samples deposited at room temperature. The model proposes an overpopulation of the iron tetrahedral A sites.

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