Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

2004 ◽  
Vol 815 ◽  
Author(s):  
H. Tsuchida ◽  
I. Kamata ◽  
S. Izumi ◽  
T. Tawara ◽  
T. Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Defect Density ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
Effective Lifetime ◽  
Growth Technique ◽  
Homoepitaxial Growth

AbstractGrowth technique for thick SiC epilayers with a reduced micropipe density has been developed in a vertical hot-wall CVD reactor. Micropipe closing by growing an epilayer is possible with a nearly 100% probability for 4H-SiC substrates oriented (0001) and (000-1) off-cut towards either [11-20] or [1-100]. By applying the micropipe closing technique, a high-performance Schottky barrier diode (SBD) was demonstrated on a substrate including micropipes. Growth of low-doped and thick SiC epilayers is also possible with a good morphology at a high growth rate, and 14.4 kV blocking performance was demonstrated using a 210 μm-thick epilayer. Epitaxial growth on (000-1) substrates with low doping and a low epi-induced defect density was also demonstrated. Deep centers and impurities were investigated to determine the effective lifetime killer of the epilayers. Dislocations and stacking faults in epilayers grown on 4H-SiC substrates off-cut towards different directions were also investigated.

Investigation of homoepitaxial growth by microwave plasma CVD providing high growth rate and high quality of diamond simultaneously

2020 ◽  
Vol 22 ◽  
pp. 100816 ◽  
Author(s):  
A.L. Vikharev ◽  
M.A. Lobaev ◽  
A.M. Gorbachev ◽  
D.B. Radishev ◽  
V.A. Isaev ◽  
...  
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Microwave Plasma Cvd

Development of 4H–SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity

2008 ◽  
Vol 1 (1) ◽  
pp. 015001 ◽  
Author(s):  
Masahiko Ito ◽  
Liutauras Storasta ◽  
Hidekazu Tsuchida
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
High Growth ◽  
High Growth Rate ◽  
Large Area ◽  
Growth Technique

Control of Materials and Interfaces in μc-Si:H-based Solar Cells Grown at High Rate

2011 ◽  
Vol 1321 ◽  
Author(s):  
Yasushi Sobajima ◽  
Chitose Sada ◽  
Akihisa Matsuda ◽  
Hiroaki Okamoto
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Film Growth ◽  
Defect Density ◽  
Density Measurement ◽  
High Growth ◽  
High Growth Rate ◽  
High Rate ◽  
Bulk Region ◽  
Dangling Bond

ABSTRACTGrowth process of microcrystalline silicon (μc-Si:H) using plasma-enhanced chemicalvapor- deposition method under high-rate-growth condition has been studied for the control of optoelectronic properties in the resulting materials. We have found two important things for the spatial-defect distribution in the resulting μc-Si:H through a precise dangling-bond-density measurement, e. g., (1) dangling-bond defects are uniformly distributed in the bulk region of μc- Si:H films independent of their crystallite size and (2) large number of dangling bonds are located at the surface of μc-Si:H especially when the film is deposited at high growth rate. Starting procedure of film growth has been investigated as an important process to control the dangling-bond-defect density in the bulk region of resulting μc-Si:H through the change in the electron temperature by the presence of particulates produced at the starting period of the plasma. Deposition of Si-compress thin layer on μc-Si:H grown at high rate followed by thermal annealing has been proposed as an effective method to reduce the defect density at the surface of resulting μc-Si:H. Utilizing the starting-procedure-controlling method and the compress-layerdeposition method together with several interface-controlling methods, we have demonstrated the fabrication of high conversion-efficiency (9.27%) substrate-type (n-i-p) μc-Si:H solar cells whose intrinsic μc-Si:H layer is deposited at high growth rate of 2.3 nm/sec.

High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (54) ◽  
pp. 3643-3647 ◽  
Author(s):  
F. La Via ◽  
G. Litrico ◽  
R. Anzalone ◽  
A. Severino ◽  
M. Salanitri ◽  
...  
Keyword(s):  
Growth Rate ◽  
Film Thickness ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Sem Analysis ◽  
Final Thickness ◽  
Tem Analysis ◽  
Higher Temperature ◽  
Sic Film

Abstract 3C-SiC devices are hampered by a high crystal defect density due to the hetero-epitaxial growth of these films, which results in the presence of stacking faults (SF). In this paper high growth rate CVD processes have been used to try to reduce the SF density in 3C-SiC films. In a first step a high growth rate (30 μm/h) has been used to grow 50 μm thick 3C-SiC layer on (100) Si. Then the silicon substrate was removed via etching and a further 3C-SiC growth was performed with a higher growth rate (90 μm/h) at a higher temperature (1600 °C) to obtain a final thickness of 150 μm. The SF presence and density were evaluated by TEM analysis performed on as-grown samples and SEM analysis on KOH etched samples with various thicknesses. A decrease of SF density was observed with an increase of 3C-SiC film thickness, with the best results (500/cm) obtained for the thickest sample. The 3C-SiC film quality and orientation was evaluated by XRD are correlated with film thickness and SF density.

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

2016 ◽  
Vol 858 ◽  
pp. 173-176 ◽  
Author(s):  
Hideyuki Uehigashi ◽  
Keisuke Fukada ◽  
Masahiko Ito ◽  
Isaho Kamata ◽  
Hiroaki Fujibayashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Epitaxial Growth ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
X Ray ◽  
Crystalline Defects ◽  
Transmission Electron

We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the characteristics of devices, we investigated the formation of variety of in-grown stacking faults (SFs) in detail. Synchrotron X-ray topography, photoluminescence (PL) and transmission electron microscopy are employed to analyze the SFs and the origins of the SF formation are discussed. The result in reducing in-grown SFs in fast epitaxial growth is also shown.

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

2008 ◽  
Vol 600-603 ◽  
pp. 123-126 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Defect Density ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Characterization Methods ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

Preparation and Characterization of Titania Porous-Nanotube Arrays with a High Growth Rate on Flexible Stainless Steel Substrate

2011 ◽  
Vol 399-401 ◽  
pp. 760-765 ◽  
Author(s):  
Xue Ting He ◽  
Jie Tao ◽  
Hai Jun Tao ◽  
Zuo Guo Bao
Keyword(s):  
Growth Rate ◽  
Stainless Steel ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
High Growth ◽  
High Growth Rate ◽  
Nanotube Arrays ◽  
X Ray Diffraction ◽  
Sendzimir Mill

Ti film sputtered on flexible stainless steel substrate that rolled by 20-high Sendzimir Mill, was anodized in ethylene glycol bath in the presence of 0.5 wt.% NH4F and 3 vol.% H2O at a high voltage of 60 V. High-aspect-ratio porous-nanotube arrays (PNTAs) of TiO2 with the tubes length of 6.2 µm were quickly prepared from Ti film, at the high growth rate of 20.7 nm·s-1. Then the morphology and structure of PNTAs were characterized by field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD), respectively. Finally, a DSSC with the photoanode of PNTAs exhibited a performance of Jsc= 2.40 mA·cm-2, Voc= 0.79V, FF = 0.57 and η = 1.08%.

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

2015 ◽  
Vol 821-823 ◽  
pp. 133-136 ◽  
Author(s):  
Takanori Tanaka ◽  
Naoyuki Kawabata ◽  
Yoichiro Mitani ◽  
Masashi Sakai ◽  
Nobuyuki Tomita ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Throughput ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Pressure Condition ◽  
High Quality ◽  
Growth Pressure ◽  
Hcl Gas

The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm2, indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system.

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