A novel method to determine Ga profile in CIGS thin film compound via focused ion beam modification

Materialia ◽  
2021 ◽  
Vol 16 ◽  
pp. 101091
Author(s):  
Chaowei Xue ◽  
David Spaulding ◽  
Anh Duong ◽  
Huu-Ha Loi ◽  
Magdalena Parker ◽  
...  
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Modification ◽  
Cigs Thin Film ◽  
Novel Method

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Fabrication of Dc-SQUID with As-Grown YBaCuO Thin Film by Focused Ion Beam

1990 ◽  
pp. 987-990
Author(s):  
M. Tanioku ◽  
K. Kuroda ◽  
K. Kojima ◽  
K. Hamanaka ◽  
Y. H. Hisaoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam

Temperature Measurement by Using Metal Thin Film Thermocouples

2003 ◽  
Author(s):  
Koji Miyazaki ◽  
Hiroshi Tsukamoto ◽  
Takahiro Miike ◽  
Toshiaki Takamiya
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Glass Plate ◽  
Mean Free Path ◽  
Dimensional Structure ◽  
Measured Temperature ◽  
Metal Thin Film ◽  
Thin Film Thermocouples ◽  
Thermocouple Junction

We fabricate metal thin film thermocouples (TFTCs). Au-Pt, Cu-Ni, and W-Ni are deposited on a glass plate using standard thin film processes. The dimension of thermocouple junction is 300μm × 300μm. The thermoelectric powers of TFTCs are different from those of bulk because diffusion of electrons is restricted by the very thin film. The film thickness of TFTCs is of the same order as the mean free path of electrons. However TFTCs are still useful for temperature measurements because the thermoelectric voltage is proportional to measured temperature at thermocouple junction. The response time of Au-Pt TFTCs is about 30ns when the surface of the glass is heated by a YAG pulsed laser. The result compares favorably with measurements by a thermoreflectance method. We also describe W-Ni nano-TFTCs fabricated by Focused Ion Beam for the measurement of temperature distribution in a sub-micron area. In order to reduce the size of the TFTCs we employ a 3-dimensional structure.

Fracture Toughness of Titanium - Titanium Nitride Multi-Layer Thin Film

2008 ◽  
Author(s):  
Mohan Prasad Manoharan ◽  
Amit Desai ◽  
Amanul Haque
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Titanium Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
New Class ◽  
Tin Coatings ◽  
Film Specimen ◽  
Cantilever Bending ◽  
Layer Thin Film

Thin film specimens of titanium - titanium nitride multilayer erosion resistant coating were prepared using liftout technique in Focused Ion Beam - Scanning Electron Microscope (SEM). The fracture toughness of the thin film specimen was measured in situ using a cantilever bending experiment in SEM to be 11.33 MPa/m0.5, twice as much as conventional TiN coatings. Ti–TiN multi-layer coatings are part of a new class of advanced erosion resistant coatings and this paper discusses an experimental technique to measure the fracture toughness of these coatings.

A Membrane Deflection Fracture Experiment to Investigate Fracture Toughness of Freestanding MEMS Materials

2003 ◽  
Vol 795 ◽  
Author(s):  
H. D. Espinosa ◽  
B. Peng
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Mean Value ◽  
Advanced Materials ◽  
Ultrananocrystalline Diamond ◽  
Membrane Deflection

ABSTRACTThis paper presents a novel Membrane Deflection Fracture Experiment (MDFE) to investigate the fracture toughness of MEMS and other advanced materials in thin film form. It involves the stretching of freestanding thin-film membranes, in a fixed-fixed configuration, containing pre-existing cracks. The fracture behavior of ultrananocrystalline diamond (UNCD), a material developed at Argonne National Laboratory, is investigated to illustrate the methodology. When the fracture initiates from sharp cracks, produced by indentation, the fracture toughness was found to be 4.7 MPa m1/2. When the fracture initiates from blunt notches with radii about 100 nm, machined by focused ion beam (FIB), the mean value of the apparent fracture toughness was found to be 7.2 MPa m1/2. Comparison of these two values, using the model proposed by Drory et al. [9], provides a correction factor of 2/3, which corresponds to a mean value of ρ/2x=1/2.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Integrating electron and near-field optics: dual vision for the nanoworld

Nanophotonics ◽  
2014 ◽  
Vol 3 (1-2) ◽  
pp. 75-89 ◽  
Author(s):  
Nancy M. Haegel
Keyword(s):  
Focused Ion Beam ◽  
Dynamic Range ◽  
Ion Beam ◽  
Near Field ◽  
Transport Phenomena ◽  
Force Microscopy ◽  
Ion Beam Modification ◽  
Near Field Optics ◽  
Dual Beam ◽  
Scanning Optical Microscopy

AbstractThe integration of near-field scanning optical microscopy (NSOM) with the imaging and localized excitation capabilities of electrons in a scanning electron microscope (SEM) offers new capabilities for the observation of highly resolved transport phenomena in the areas of electronic and optical materials characterization, semiconductor nanodevices, plasmonics and integrated nanophotonics. While combined capabilities for atomic force microscopy (AFM) and SEM are of obvious interest to provide localized surface topography in concert with the ease and large spatial dynamic range of SEM and dual beam imaging (e.g., in-situ AFM following focused ion beam modification), integration with near-field optical imaging capability can also provide access to localized transport phenomena beyond the reach of far-field systems. In particular, the flexibility that is achieved with the capability for independent, high resolution placement of an electron source, providing localized excitation in the form of free carriers, photons or plasmons, with scanning of the optical collecting tip allows for unique types of “dual-probe” experiments that directly image energy transfer. We review integrated near-field and electron optics systems to date, highlight applications in a variety of fields and suggest future directions.

Etching characteristics of TiNi thin film by focused ion beam

2004 ◽  
Vol 225 (1-4) ◽  
pp. 54-58 ◽  
Author(s):  
D.Z. Xie ◽  
B.K.A. Ngoi ◽  
Y.Q. Fu ◽  
A.S. Ong ◽  
B.H. Lim
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam
Sign in / Sign up

Export Citation Format

Share Document