Temperature dependent formation of ZnO and Zn2SiO4 nanoparticles by ion implantation and thermal annealing

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

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TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

Journal of Materials Science and Chemical Engineering ◽

10.4236/msce.2017.51003 ◽

2017 ◽

Vol 05 (01) ◽

pp. 15-25

Author(s):

Junji Yamanaka ◽

Shigenori Inoue ◽

Keisuke Arimoto ◽

Kiyokazu Nakagawa ◽

Kentarou Sawano ◽

...

Keyword(s):

Thin Films ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing

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Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)

Applied Physics A Solids and Surface ◽

10.1007/bf00331725 ◽

1994 ◽

Vol 59 (4) ◽

pp. 435-439 ◽

Cited By ~ 27

Author(s):

A. Markwitz ◽

H. Baumann ◽

E. F. Krimmel ◽

R. W. Michelmann ◽

C. Maurer ◽

...

Keyword(s):

Electron Beam ◽

Silicon Nitride ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Chemical Bonding ◽

Interface Analysis ◽

Nitride Layers

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Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

MRS Proceedings ◽

10.1557/proc-52-241 ◽

1985 ◽

Vol 52 ◽

Author(s):

D. L. Kwong ◽

N. S. Alvi ◽

Y. H. Ku ◽

A. W. Cheung

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Experimental Results ◽

Silicon Substrates ◽

Electrical Characteristics ◽

Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

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