Zirconium oxide dielectric layer grown by a surface sol–gel method for low-voltage, hysteresis-free, and high-mobility polymer field effect transistors

2016 ◽  
Vol 28 ◽  
pp. 1-5 ◽  
Author(s):  
Byung Tack Lim ◽  
Jangwhan Cho ◽  
Kwang Hee Cheon ◽  
Kyu Min Sim ◽  
Kwonwoo Shin ◽  
...  
2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 942-948 ◽  
Author(s):  
Shiun-Sheng Jan ◽  
Ying-Chung Chen ◽  
Jung-Chuan Chou ◽  
Chien-Chuan Cheng ◽  
Chun-Te Lu

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.


1996 ◽  
Vol 35 (Part 2, No. 12A) ◽  
pp. L1600-L1602 ◽  
Author(s):  
Hiroko Kominami ◽  
Takato Nakamura ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka

2017 ◽  
Vol 48 (1) ◽  
pp. 1350-1352 ◽  
Author(s):  
Sung Min Kwon ◽  
Myung Gil Kim ◽  
Su Min Jung ◽  
Sung Kyu Park

1999 ◽  
Author(s):  
Yoshikazu Fujimori ◽  
Toshiyuki Takeda ◽  
Takashi Nakamura ◽  
Hidemi Takasu

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.


Sign in / Sign up

Export Citation Format

Share Document