Stable electrolyte dielectric engineered bottom-gate poly(3-hexylthiophene) transistors with enhanced mobility

2022 ◽  
pp. 106430
Author(s):  
Benjamin Nketia-Yawson ◽  
Ji Hyeon Lee ◽  
Grace Dansoa Tabi ◽  
Henry Opoku ◽  
Jae-Joon Lee ◽  
...  
Keyword(s):  
Enhanced Mobility ◽  
Bottom Gate

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

2011 ◽  
Vol E94-C (5) ◽  
pp. 712-716 ◽  
Author(s):  
Jungwoo OH ◽  
Jeff HUANG ◽  
Injo OK ◽  
Se-Hoon LEE ◽  
Paul D. KIRSCH ◽  
...  
Keyword(s):  
Cmos Transistors ◽  
Enhanced Mobility

Tris(4-(1-phenyl-1H-benzo[d]imidazole)phenyl)phosphine oxide for enhanced mobility and restricted traps in photovoltaic interlayers

2021 ◽  
Vol 9 (10) ◽  
pp. 3642-3651
Author(s):  
Jihyun Lim ◽  
Do-Yeong Choi ◽  
Woongsik Jang ◽  
Hyeon-Ho Choi ◽  
Yun-Hi Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Small Molecule ◽  
Phosphine Oxide ◽  
Organic Material ◽  
Perovskite Solar Cells ◽  
Effective Electron ◽  
Enhanced Mobility

Small molecule organic material, tris(4-(1-phenyl-1H-benzo[d]imidazole)phenyl)phosphine oxide (TIPO) was newly synthesised and introduced into an n-type interlayer in planar perovskite solar cells for effective electron transport.

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field

2019 ◽  
Vol 30 (34) ◽  
pp. 345206 ◽  
Author(s):  
Hyunjin Ji ◽  
Hojoon Yi ◽  
Sakong Wonkil ◽  
Hyun Kim ◽  
Seong Chu Lim
Keyword(s):  
Electric Field ◽  
Monolayer Mos2 ◽  
Vertical Electric Field ◽  
Enhanced Mobility

TWO PHOTON PHOTOCONDUCTIVITY OF ZnS USING XeCl LASER

2003 ◽  
Vol 17 (24) ◽  
pp. 1265-1270 ◽  
Author(s):  
R. D. SINGH ◽  
D. S. AHLAWAT ◽  
ARUN GAUR
Keyword(s):  
Band Gap ◽  
Photon Energy ◽  
Xecl Laser ◽  
Two Photon ◽  
Comparison Of Results ◽  
Photon Excitation ◽  
Enhanced Mobility ◽  
Two Photon Excitation

Log Q versus log I ph characteristics and laser enhanced mobility in the case of ZnS have been studied using a XeCl laser. The comparison of results in this case with multiphoton photoconductivity of other materials indicates two photon excitation from a lower valance band, wherefrom one-photon excitation is forbidden but two-photon excitation is allowed. Since the band-gap of ZnS is smaller than the photon energy of the XeCl laser, the result seems to be interesting.

Investigation and Fabrication of Bottom Gate ZnO:Al TTFTs with Various Thicknesses of ZnO Buffer Layers

2019 ◽  
Vol 28 (4) ◽  
pp. 21-26
Author(s):  
Yung-Hao Lin ◽  
Hsin-Ying Lee ◽  
Ching-Ting Lee
Keyword(s):  
Buffer Layers ◽  
Bottom Gate

Enhanced mobility of confined polymers

2007 ◽  
Vol 6 (12) ◽  
pp. 961-965 ◽  
Author(s):  
Kyusoon Shin ◽  
Sergei Obukhov ◽  
Jiun-Tai Chen ◽  
June Huh ◽  
Yoontae Hwang ◽  
...  
Keyword(s):  
Confined Polymers ◽  
Enhanced Mobility
Sign in / Sign up

Export Citation Format

Share Document